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公开(公告)号：US11258406B2
公开(公告)日：2022-02-22
申请号：US16458409
申请日：2019-07-01
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Masatoshi Hase , Yuri Honda , Kazuo Watanabe , Takashi Soga
Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
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公开(公告)号：US10680555B2
公开(公告)日：2020-06-09
申请号：US16177866
申请日：2018-11-01
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi Soga
Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
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公开(公告)号：US20180152143A1
公开(公告)日：2018-05-31
申请号：US15821054
申请日：2017-11-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Masatoshi Hase , Yuri Honda , Kazuo Watanabe , Takashi Soga
CPC classification number: H03F1/0205 , H03F1/0261 , H03F1/22 , H03F1/56 , H03F1/565 , H03F3/195 , H03F3/213 , H03F2200/222 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/516
Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
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公开(公告)号：US10910999B2
公开(公告)日：2021-02-02
申请号：US16867091
申请日：2020-05-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi Soga
Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
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公开(公告)号：US10389307B2
公开(公告)日：2019-08-20
申请号：US16001658
申请日：2018-06-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Masatoshi Hase , Yuri Honda , Kazuo Watanabe , Takashi Soga
Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
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Patent Agency Ranking
公开(公告)号：US20170019082A1
公开(公告)日：2017-01-19
申请号：US15201999
申请日：2016-07-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shota Ishihara , Yusuke Shimamune , Takashi Soga , Fuminori Morisawa , Seiko Ono , Tetsuaki Adachi
CPC classification number: H03G3/3042 , H03F1/565 , H03F3/19 , H03F3/245 , H03F2200/102 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03G3/3047 , H03G2201/40
Abstract: Provided is a power amplification module that includes: an amplification transistor that has a constant power supply voltage supplied to a collector thereof, a bias current supplied to a base thereof and that amplifies an input signal input to the base thereof and outputs an amplified signal from the collector thereof; a first current source that outputs a first current that corresponds to a level control voltage that is for controlling a signal level of the amplified signal; and a bias transistor that has the first current supplied to a collector thereof, a bias control voltage connected to a base thereof and that outputs the bias current from an emitter thereof.
Abstract translation: 提供了一种功率放大模块，其包括：放大晶体管，其具有提供给其集电极的恒定电源电压，提供给其基极的偏置电流，并且放大输入到其基极的输入信号，并输出来自 其收集器; 输出对应于用于控制放大信号的信号电平的电平控制电压的第一电流的第一电流源; 以及具有提供给其集电极的第一电流的偏置晶体管，连接到其基极并从其发射极输出偏置电流的偏置控制电压。
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公开(公告)号：US11489497B2
公开(公告)日：2022-11-01
申请号：US16925533
申请日：2020-07-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi Soga
Abstract: A bias circuit includes first to fourth transistors and a phase compensation circuit. In the first transistor, a reference current or voltage is supplied to a first terminal, and the first terminal and a second terminal are connected. In the second transistor, a first terminal is connected to the first transistor, and a third terminal is grounded. In the third transistor, a power supply voltage is supplied to a first terminal, a second terminal is connected to the first transistor, and a bias current or voltage is supplied from a third terminal to an amplifier transistor. In the fourth transistor, a first terminal is connected to the third transistor, a second terminal is connected to the second transistor, and a third terminal is grounded. The phase compensation circuit is provided in a path extending from the fourth transistor to the third transistor through the second and first transistors.
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公开(公告)号：US10148226B2
公开(公告)日：2018-12-04
申请号：US15834723
申请日：2017-12-07
Applicant: Murata Manufacturing Co., Ltd
Inventor： Takashi Soga
Abstract: A bias circuit includes first to fourth bipolar transistors and a filter circuit. The third bipolar transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
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公开(公告)号：US20180294788A1
公开(公告)日：2018-10-11
申请号：US16007087
申请日：2018-06-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shota Ishihara , Yusuke Shimamune , Takashi Soga , Fuminori Morisawa , Seiko Ono , Tetsuaki Adachi
Abstract: Provided is a power amplification module that includes: an amplification transistor that has a constant power supply voltage supplied to a collector thereof, a bias current supplied to a base thereof and that amplifies an input signal input to the base thereof and outputs an amplified signal from the collector thereof; a first current source that outputs a first current that corresponds to a level control voltage that is for controlling a signal level of the amplified signal; and a bias transistor that has the first current supplied to a collector thereof, a bias control voltage connected to a base thereof and that outputs the bias current from an emitter thereof.
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公开(公告)号：US10020786B2
公开(公告)日：2018-07-10
申请号：US15201999
申请日：2016-07-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shota Ishihara , Yusuke Shimamune , Takashi Soga , Fuminori Morisawa , Seiko Ono , Tetsuaki Adachi
CPC classification number: H03G3/3042 , H03F1/565 , H03F3/19 , H03F3/245 , H03F2200/102 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03G3/3047 , H03G2201/40
Abstract: Provided is a power amplification module that includes: an amplification transistor that has a constant power supply voltage supplied to a collector thereof, a bias current supplied to a base thereof and that amplifies an input signal input to the base thereof and outputs an amplified signal from the collector thereof; a first current source that outputs a first current that corresponds to a level control voltage that is for controlling a signal level of the amplified signal; and a bias transistor that has the first current supplied to a collector thereof, a bias control voltage connected to a base thereof and that outputs the bias current from an emitter thereof.
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