Solvent-based and water-based carbon nanotube inks with removable additives
    1.
    发明授权
    Solvent-based and water-based carbon nanotube inks with removable additives 有权
    具有可除去添加剂的溶剂型和水性碳纳米管油墨

    公开(公告)号:US09340697B2

    公开(公告)日:2016-05-17

    申请号:US13725080

    申请日:2012-12-21

    申请人: Nano-C, Inc.

    摘要: In accordance with some embodiments, compositions and methods for forming solvent-based and water-based carbon nanotubes inks with removable additives are provided. In some embodiments, an ink composition is provided that includes a plurality of carbon nanotubes, a solvent, and a triazole-based removable additive, where the plurality of carbon nanotubes are dispersed within the solvent and wherein the triazole-based removable additive stabilizes the plurality of carbon nanotubes that are dispersed in the solvent.

    摘要翻译: 根据一些实施方案,提供了用于形成具有可除去添加剂的溶剂基和水基碳纳米管油墨的组合物和方法。 在一些实施方案中,提供了包含多个碳纳米管,溶剂和三唑类可除去添加剂的油墨组合物,其中多个碳纳米管分散在溶剂中,并且其中三唑类可除去添加剂稳定了多个 的分散在溶剂中的碳纳米管。

    Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same
    3.
    发明授权
    Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same 有权
    包括富勒烯分子的非挥发性闪存结构及其制造方法

    公开(公告)号:US09219166B2

    公开(公告)日:2015-12-22

    申请号:US14138294

    申请日:2013-12-23

    摘要: Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.

    摘要翻译: 隧道势垒的实施例及其方法可以将表现出单分散特性的分子嵌入电介质层(例如,形成介电层的第一和第二层之间)。 在一个实施例中,通过将C60分子嵌入形成电介质层的第一和第二绝缘层之间,可以实现场敏感隧道势垒。 在一个实施例中,隧道势垒可以在浮动栅极和半导体结构中的沟道之间。 在一个实施例中,可以在非易失性存储器应用中使用隧穿膜,其中C60提供可接近的能级,以在施加电压时提供谐振隧道穿过电介质层。 实施例还考虑了在非易失性闪速存储器结构内的隧道电介质和浮栅中的至少一个的上下文中并入的工程化富勒烯分子。

    NONVOLATILE FLASH MEMORY STRUCTURES INCLUDING FULLERENE MOLECULES AND METHODS FOR MANUFACTURING THE SAME
    4.
    发明申请
    NONVOLATILE FLASH MEMORY STRUCTURES INCLUDING FULLERENE MOLECULES AND METHODS FOR MANUFACTURING THE SAME 有权
    非易失性闪存存储器结构,包括富勒烯分子及其制造方法

    公开(公告)号:US20140169104A1

    公开(公告)日:2014-06-19

    申请号:US14138294

    申请日:2013-12-23

    摘要: Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.

    摘要翻译: 隧道势垒的实施例及其方法可以将表现出单分散特性的分子嵌入电介质层(例如,形成介电层的第一和第二层之间)。 在一个实施例中,通过将C60分子嵌入形成电介质层的第一和第二绝缘层之间,可以实现场敏感隧道势垒。 在一个实施例中,隧道势垒可以在浮动栅极和半导体结构中的沟道之间。 在一个实施例中,可以在非易失性存储器应用中使用隧穿膜,其中C60提供可接近的能级,以在施加电压时提供谐振隧道穿过电介质层。 实施例还考虑了在非易失性闪存结构内的隧道电介质和浮栅中的至少一个的上下文中并入的工程化富勒烯分子。