摘要:
In accordance with some embodiments, compositions and methods for forming solvent-based and water-based carbon nanotubes inks with removable additives are provided. In some embodiments, an ink composition is provided that includes a plurality of carbon nanotubes, a solvent, and a triazole-based removable additive, where the plurality of carbon nanotubes are dispersed within the solvent and wherein the triazole-based removable additive stabilizes the plurality of carbon nanotubes that are dispersed in the solvent.
摘要:
In accordance with some embodiments, compositions and methods for forming solvent-based and water-based carbon nanotubes inks with removable additives are provided. In some embodiments, an ink composition is provided that includes a plurality of carbon nanotubes, a solvent, and a triazole-based removable additive, where the plurality of carbon nanotubes are dispersed within the solvent and wherein the triazole-based removable additive stabilizes the plurality of carbon nanotubes that are dispersed in the solvent.
摘要:
Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.
摘要:
Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.
摘要:
A multi-layered, transparent-conductive stack with improved mechanical robustness, and a method of making the same, is described. The multi-layered film includes a layer of a hybrid film and a layer of a transparent conductive oxide (TCO) coating that is sputter deposited and forms a contact with the hybrid film. The hybrid film includes an interconnected network of carbon nanotubes (CNTs) and a plurality of metal oxide nanoparticles (MONs). The plurality of MONs are randomly distributed in the interconnected network of CNTs forming an electrical contact with the CNTs.