-
1.
公开(公告)号:US20240101900A1
公开(公告)日:2024-03-28
申请号:US18119584
申请日:2023-03-09
Applicant: Nanosys, Inc.
Inventor: John CURLEY , Chunming WANG , Jay YAMANAGA , Xiaofeng ZHANG , Christian IPPEN
IPC: C09K11/88 , C09K11/08 , G02F1/13357 , H01L33/50 , H10K59/40
CPC classification number: C09K11/883 , C09K11/0883 , G02F1/1336 , H01L33/502 , H10K59/40 , B82Y20/00
Abstract: The invention relates to highly luminescent nanostructures with improved blue light absorbance, particularly core/shell nanostructures comprising a ZnSe core and InP and/or ZnS shell layers. The invention also relates to methods of producing such nanostructures.
-
公开(公告)号:US20170306227A1
公开(公告)日:2017-10-26
申请号:US15497404
申请日:2017-04-26
Applicant: NANOSYS, Inc.
Inventor: Christian IPPEN , Ilan JEN-LA PLANTE , Shihai KAN , Chunming WANG , Wenzhuo GUO , Yeewah Annie CHOW
CPC classification number: C09K11/883 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/565 , C09K11/70 , Y10S977/774 , Y10S977/818 , Y10S977/824 , Y10S977/892 , Y10S977/95
Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSexS1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.
-
公开(公告)号:US20200325395A1
公开(公告)日:2020-10-15
申请号:US16782250
申请日:2020-02-05
Applicant: NANOSYS, INC.
Inventor: John J. CURLEY , Alexander TU , Wenzhou GUO , Chunming WANG , Christian IPPEN , Charles HOTZ
IPC: C09K11/88 , C09K11/08 , G02F1/13357 , G02F1/1333
Abstract: The invention relates to highly luminescent nanostructures with strong blue light absorbance, particularly core/shell nanostructures comprising an In(1-x)GaxP core and ZnSe and/or ZnS shell layers, wherein 0
-
公开(公告)号:US20190273178A1
公开(公告)日:2019-09-05
申请号:US16292700
申请日:2019-03-05
Applicant: NANOSYS, INC.
Inventor: Ilan Jen-La Plante , Chunming WANG , Ernest Chung-Wei LEE
Abstract: The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and a thin inner shell layer. The nanostructures may have an additional outer shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
-
公开(公告)号:US20180354244A1
公开(公告)日:2018-12-13
申请号:US16002315
申请日:2018-06-07
Applicant: Nanosys, Inc.
Inventor: Ilan JEN-LA PLANTE , Chunming WANG
CPC classification number: B32B27/286 , B82Y30/00 , B82Y40/00 , C08L71/08 , C08L81/04 , C08L2203/16 , C08L2203/20 , C09K11/02
Abstract: The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures.
-
公开(公告)号:US20170250322A1
公开(公告)日:2017-08-31
申请号:US15441729
申请日:2017-02-24
Applicant: NANOSYS, Inc.
Inventor: Chunming WANG , Charlie HOTZ , Jason HARTLOVE , Ernest LEE
CPC classification number: H01L33/504 , B82Y30/00 , C09K11/02 , C09K11/70 , C09K11/88 , C09K11/883 , G02F2001/133614 , H01L27/156 , H01L33/56 , H01L33/58
Abstract: Low concentration cadmium-containing quantum dot compositions are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.
-
公开(公告)号:US20220195294A1
公开(公告)日:2022-06-23
申请号:US17166788
申请日:2021-02-03
Applicant: Nanosys, Inc.
Inventor: Ravisubhash TANGIRALA , Jay YAMANAGA , Wenzhou GUO , Christopher SUNDERLAND , Ashenafi Damtew MAMUYE , Chunming WANG , Eunhee HWANG , Nahyoung KIM
IPC: C09K11/62 , C09K11/02 , C08J5/18 , G02B1/00 , G02F1/13357 , G02F1/1335
Abstract: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
-
公开(公告)号:US20200347295A1
公开(公告)日:2020-11-05
申请号:US16841350
申请日:2020-04-06
Applicant: Nanosys, Inc.
Inventor: John J. CURLEY , Chunming WANG
Abstract: Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.
-
公开(公告)号:US20200325396A1
公开(公告)日:2020-10-15
申请号:US16847782
申请日:2020-04-14
Applicant: Nanosys, Inc.
Inventor: Yeewah Annie CHOW , Jason HARTLOVE , Charles HOTZ , Chunming WANG , Wenzhou GUO , Ilan JEN-LA PLANTE , Jason Travis TILLMAN , John J. CURLEY , Christian IPPEN , Alexander TU , Ke GONG , Minghu TU
IPC: C09K11/88 , C09K11/08 , C09K11/02 , H01L51/50 , G02F1/13357
Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
-
公开(公告)号:US20200291296A1
公开(公告)日:2020-09-17
申请号:US16751646
申请日:2020-01-24
Applicant: Nanosys, Inc.
Inventor: Ashenafi Damtew MAMUYE , Christopher SUNDERLAND , Chunming WANG
Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnTe core and CdS, CdSe, CdTe, ZnS, ZnSe, or ZnTe shell layers. The nanostructures show strong absorbance at 450 nm and have a high OD450/mass ratio. The invention also relates to methods of producing such nanostructures.
-
-
-
-
-
-
-
-
-