公开(公告)号：US12112950B2

公开(公告)日：2024-10-08

申请号：US17667667

申请日：2022-02-09

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Ming-Hung Hsieh

IPC分类号： H10B43/27 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  G11C8/14

CPC分类号： H01L21/28061 ,  H01L21/02532 ,  H01L21/28556 ,  H10B43/27 ,  G11C8/14

摘要： The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; and a first gate stack positioned on the substrate and including: a first gate dielectric layer positioned on the substrate; a first gate protection layer positioned on the first gate dielectric layer and including titanium silicon nitride; a first work function layer positioned on the first gate protection layer; and a first gate filler layer positioned on the first work function layer.

公开(公告)号：US11665881B2

公开(公告)日：2023-05-30

申请号：US17390405

申请日：2021-07-30

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Ming-Hung Hsieh

IPC分类号： H01L29/78 ,  H01L29/10

CPC分类号： H10B12/30 ,  H01L29/1033 ,  H01L29/7827 ,  H10B12/03 ,  H10B12/485

摘要： The present disclosure relates to a memory device with a vertical field effect transistor (VFET) and a method for preparing the memory device. The memory device includes a capacitor contact disposed in a first semiconductor substrate, and a channel structure disposed over a top surface of the first semiconductor substrate. The memory device also includes a first gate structure disposed on a first sidewall of the channel structure, and a second gate structure disposed on a second sidewall of the channel structure. The second sidewall of the channel structure is opposite to the first sidewall of the channel structure. The memory device further includes a bit line contact disposed over the channel structure. The channel structure is electrically connected to a capacitor and a bit line through the capacitor contact and the bit line contact.

公开(公告)号：US11545453B2

公开(公告)日：2023-01-03

申请号：US17234282

申请日：2021-04-19

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Ming-Hung Hsieh

IPC分类号： H01L29/786 ,  H01L23/00

摘要： The present application discloses a semiconductor device with a barrier layer including aluminum fluoride and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a circuit layer positioned on the substrate, a pad layer positioned in the circuit layer and including aluminum and copper, a first barrier layer positioned on the pad layer and including aluminum fluoride, and a first connector positioned on the first barrier layer.

公开(公告)号：US12107175B2

公开(公告)日：2024-10-01

申请号：US17572813

申请日：2022-01-11

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Ming-Hung Hsieh

IPC分类号： H01L23/495 ,  H01L25/16 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/102 ,  H10B99/00

CPC分类号： H01L31/02165 ,  H01L25/167 ,  H01L31/02327 ,  H01L31/102 ,  H10B99/00

摘要： An optical semiconductor device with cascade vias is disclosed. The semiconductor device a logic die having a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and having a memory cell area and a memory peripheral area; a first inter-die via positioned in the memory peripheral area; a landing pad positioned on the first inter-die via; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area. The first inter-die via and the first intra-die via are electrically coupled through the landing pad in a cascade manner.