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公开(公告)号：US20160181633A1
公开(公告)日：2016-06-23
申请号：US14578741
申请日：2014-12-22
Inventor： YUAN-PANG WU , PO-HAN CHU , TAO-WEN PAO , HUI-YUN BOR
CPC classification number: H01M8/04201 , H01M8/04067 , H01M8/04089 , H01M8/04216 , H01M8/2465 , H01M2008/1095
Abstract: A complex fuel cell stack with hydrogen storage unit is introduced. Through the new configuration of the PEM fuel cell stack, no cooling system and cooling fluid is needed for the fuel cell stack, since hydrogen storage vessel can act as a heat sink to protect the expensive catalyst layer of the MEA of the fuel cell away from over-heated and damaged. In addition, the waste heat generated from the operation of the fuel cells can aid in release of hydrogen from hydrogen storage alloys inside the hydrogen storage vessel.
Abstract translation: 引入了具有氢存储单元的复杂燃料电池堆。 通过PEM燃料电池堆的新配置，燃料电池堆不需要冷却系统和冷却流体，因为储氢容器可以作为散热器，以保护燃料电池的MEA的昂贵的催化剂层远离 过热和损坏。 此外，由燃料电池的操作产生的废热可以帮助从储氢容器内的储氢合金释放氢。
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公开(公告)号：US20190193153A1
公开(公告)日：2019-06-27
申请号：US16104151
申请日：2018-08-17
Inventor： MAU-SHENG CHIOU , CHIEN-HUNG LIAO , CHAO-NAN WEI , HUI-YUN BOR , KUAN-ZONG FUNG
CPC classification number: B22F3/1003 , B22F1/0011 , B22F1/0074 , B22F9/04 , B22F2009/043 , B22F2301/205 , B22F2304/10
Abstract: A preparation method of high purity and densified tungsten-titanium metal which mixes titanium metal powder and tungsten metal powder together; adds metallic nitrates (such as nickel nitrate) as combustion improvers; then taking into the account of the characteristics of metal nitrate, which is soluble in alcohols to form a liquidous precursor, adds metal powder to mix together thoroughly, so that the sintering agent is expected to be colloid and uniformly spread among the tungsten-titanium metal powder. The preparation method significantly reduces the ratio of the combustion improver during the preparation of the high purity and densified tungsten-titanium target material.
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3.发明申请BISMUTH FERRITE THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 有权BISMUTH FITEITE薄膜太阳能电池及其制造方法公开(公告)号：US20160181451A1
公开(公告)日：2016-06-23
申请号：US14573312
申请日：2014-12-17
Inventor： YUEH-HSUAN TSAI , CHAO-NAN WEI , HUI-YUN BOR , CHIA-SHIH LIN , CUO-YO NIEH , JENN-MING WU
IPC: H01L31/032 , H01L31/18 , H01L31/0445 , C23C14/08 , C23C14/35
CPC classification number: H01L31/032 , C23C18/00 , C23C18/1204 , C23C18/1254 , H01L21/02381 , H01L21/02491 , H01L21/02565 , H01L21/02628 , H01L31/0445 , H01L31/06 , H01L31/072 , H01L31/1884 , Y02E10/50
Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.
Abstract translation: 铋铁氧体薄膜太阳能电池及其制造方法通过掺杂锌来控制在铋铁氧体薄膜中缺陷的Fe 2+的量。 铋铁氧体薄膜中Fe2 +缺陷量的减少有利于闭路电流密度的增加和光电转换效率的提高。
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公开(公告)号：US20180371582A1
公开(公告)日：2018-12-27
申请号：US15633989
申请日：2017-06-27
Inventor： CHIEN-HUNG LIAO , HUI-YUN BOR , CUO-YO NIEH , CHAO-NAN WEI , SZ-HEN CHEN , PO-HAN CHU
Abstract: A high creep-resistant equiaxed grain nickel-based superalloy. The high creep-resistant equiaxed grain nickel-based superalloy is characterized that the chemical compositions in weight ratios include Cr in 8.0 to 9.5 wt %, W in 9.5 to 10.5 wt %, Co in 9.5 to 10.5 wt %, Al in 5.0 to 6.0 wt %, Ti in 0.5 to 1.5 wt %, Mo in 0.5 to 1.0 wt %, Ta in 2.5 to 4.0 wt %, Hf in 1.0 to 2.0 wt %, Ir in 2.0 to 4.0 wt %, C in 0.1 to 0.2 wt %, B in 0.01 to 0.1 wt %, Zr in 0.01 to 0.10 wt %, and the remaining part formed by Ni and inevitable impurities.
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5.发明申请LINEAR EVAPORATION APPARATUS FOR IMPROVING UNIFORMITY OF THIN FILMS AND UTILIZATION OF EVAPORATION MATERIALS 有权线性蒸发装置，用于改善薄膜的均匀性和蒸发材料的利用公开(公告)号：US20160047033A1
公开(公告)日：2016-02-18
申请号：US14715618
申请日：2015-05-19
Inventor： SHIH-CHANG LIANG , WEI-CHIEH HUANG , CHAO-NAN WEI , CUO-YO NI , HUI-YUN BOR
IPC: C23C14/24
CPC classification number: C23C14/243 , C23C14/0623
Abstract: A linear evaporation apparatus includes a thermal insulation chamber, and crucibles, evaporation material heaters and a mixing chamber installed in the thermal insulation chamber. The mixing chamber includes a flow limiting and adjusting layer, a flow channel adjusting member, a mixed layer and a linear evaporation layer. The flow limiting and adjusting layer is a rectangular sheet with flow limit holes corresponsive to the crucibles respectively; the flow channel adjusting member is an interconnected structure having at least one flow inlet corresponsive to some of the flow limit holes and at least one flow outlet, and the mixed layer is a substantially I-shaped sheet structure, and the linear evaporation layer is a rectangular sheet having a linear source evaporation opening tapered from both ends to the middle, so as to improve the uniformity of the thin film and the utilization of the evaporation materials.
Abstract translation: 线性蒸发装置包括隔热室，坩埚，蒸发材料加热器和安装在隔热室中的混合室。 混合室包括流动限制和调节层，流路调节构件，混合层和线性蒸发层。 流量限制和调节层是分别与坩埚相对应的流动极限孔的矩形片材; 流动通道调节构件是具有与一些流动限制孔和至少一个流出口相对应的至少一个流入口的互连结构，并且混合层是基本上为I形的片状结构，并且线性蒸发层为 具有从两端向中间逐渐变细的线性源蒸发口的矩形片材，以提高薄膜的均匀性和蒸发材料的利用。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180148828A1
公开(公告)日：2018-05-31
申请号：US15641330
申请日：2017-07-05
Inventor： TE-JU CHUNG , WEN-CHIEH LI , SHIH-CHANG LIANG , CHAO-NAN WEI , CUO-YO NI , HUI-YUN BOR
CPC classification number: C23C14/243 , C23C14/541 , C23C14/545
Abstract: In an apparatus for quantifying the amount of evaporation deposition of a solid substance and its method, the apparatus is connected to a reaction chamber, and a solid substance to be evaporated, a heating source and a load cell are disposed in a heating chamber. The load cell is for detecting the weight of the solid substance, and the reduced weight of the solid substance to be evaporated per unit time is equal to the mass flow of the reaction gas, so that the status of the reaction gas can be known by the weight simultaneously. When the solid substance is heated to a state to form the reaction gas, the heating chamber reaches a saturated vapor pressure greater than a vacuum background pressure of the reaction chamber, the reaction gas continues to flow along the pipeline stably towards the reaction chamber to manufacture a thin film.
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7.发明申请HIGH-CONDUCTIVITY THIN-FILM STRUCTURE FOR REDUCING METAL CONTACT RESISTANCE 审中-公开用于降低金属接触电阻的高导电性薄膜结构公开(公告)号：US20160155904A1
公开(公告)日：2016-06-02
申请号：US14556701
申请日：2014-12-01
Inventor： SHIH-CHANG LIANG , KE-DING LI , CHAO-NAN WEI , CUO-YO NI , HUI-YUN BOR
IPC: H01L33/42 , H01L29/43 , H01L31/0224
CPC classification number: H01L33/42 , H01L29/43 , H01L31/022466 , H01L31/022475 , H01L31/022483
Abstract: A high-conductivity thin-film structure for reducing metal contact resistance is disposed between a substrate and at least a metal electrode of a photoelectric component, characterized in that the thin-film structure has a first conductive layer and a second conductive layer, wherein the first conductive layer is a non-crystalline transparent conductive thin-film deposited on a lateral surface of the substrate, and the second conductive layer is a crystalline transparent conductive thin-film deposited on a lateral surface of the first conductive layer, wherein another surface of the second conductive layer is in contact with the metal electrode to serve as a conduction medium between the first conductive layer and the metal electrode. Therefore, the thin-film structure exhibits high conductivity, high transmittance, low contact resistance toward the metal electrode, and insusceptibility to unfavorable effects of coarseness of the surface of the substrate.
Abstract translation: 用于降低金属接触电阻的高导电性薄膜结构设置在基板和至少光电部件的金属电极之间，其特征在于，所述薄膜结构具有第一导电层和第二导电层，其中， 第一导电层是沉积在衬底的侧表面上的非结晶透明导电薄膜，并且第二导电层是沉积在第一导电层的侧表面上的结晶透明导电薄膜，其中另一个表面 第二导电层与金属电极接触，用作第一导电层和金属电极之间的导电介质。 因此，薄膜结构显示出高导电性，高透射率，对金属电极的低接触电阻，以及不利于衬底表面的粗糙度的不利影响。
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公开(公告)号：US20190172691A1
公开(公告)日：2019-06-06
申请号：US15974858
申请日：2018-05-09
Inventor： CHOU-YU LIN , HUI-YUN BOR , CHAO-NAN WEI , CHIEN-HUNG LIAO , SHEA-JUE WANG , SHIH-FAN CHEN
IPC: H01J37/34
Abstract: A heating carrier device for use on a sputtering cathode assembly has a heating carrier for heating a sputtering target to control a sputtering target temperature; a magnetic component for generating a magnetic field; a thermal insulation component disposed between the heating carrier and the magnetic component; and a cooling system for cooling the magnetic component. Therefore, the heating carrier device reduces the bonding strength of the sputtering target, reduces the particle size of sputtering products, and grows high-quality, uniform thin films.
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公开(公告)号：US20180021857A1
公开(公告)日：2018-01-25
申请号：US15365776
申请日：2016-11-30
Inventor： CHIA-SHIH LIN , CHAO-NAN WEI , CUO-YO NIEH , HUI-YUN BOR , KUAN-ZONG FUNG
CPC classification number: B22F9/30 , B22F1/0003 , B22F3/1017 , B22F9/04 , B22F2009/043 , B22F2301/20 , B22F2998/10 , C22C1/05 , C22C1/1084 , B22F1/0085 , B22F3/02 , B22F3/1035
Abstract: A method of preparing a tungsten metal material with high purity, comprising the steps of (A) providing a tungsten metal powder to mix with a metal nitrate to form a mixed powder slurry; (B) ball-grinding the mixed powder slurry to obtain a uniformly mixed powder; (C) sintering the uniformly mixed powder to obtain the tungsten metal material with high purity. Accordingly, the tungsten metal material with purity more than 99.9% can be prepared, so as to prepare the tungsten metal target.
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公开(公告)号：US20160312355A1
公开(公告)日：2016-10-27
申请号：US15201620
申请日：2016-07-05
Inventor： SHIH-CHANG LIANG , WEI-CHIEH HUANG , CHAO-NAN WEI , CUO-YO NI , HUI-YUN BOR
IPC: C23C14/24
CPC classification number: C23C14/24 , C23C14/243
Abstract: In a method and apparatus for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.
Abstract translation: 在用于蒸发沉积均匀薄膜的方法和装置中，在保持恒定沉积速率的同时，将膜沉积在真空环境的基板上。 一个盖子安装在蒸发容器的墙壁上。 当蒸发材料被加热到蒸发状态并且蒸发容器的内部达到第一蒸气饱和压力时，蒸发材料的蒸气朝向压力稳定室流动。 当压力稳定室达到小于第一蒸汽饱和压力的第二蒸气饱和压力时，真空环境的真空背景压力小于第二蒸汽饱和压力，使得蒸发材料蒸汽从压力稳定 由于压力差，以恒定速率朝向真空环境室，以便使基板蒸发。
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