公开(公告)号：US20150345040A1

公开(公告)日：2015-12-03

申请号：US14289879

申请日：2014-05-29

Applicant: National Chung Shan Institute of Science and Technology

Inventor： CHI-HAW CHIANG ,  CHIH WANG ,  YU-PING WANG ,  CHUN-YU LEE ,  REN-RUEY FANG ,  YANG-KUAO KUO

IPC: C25D3/56 ,  C25D5/48 ,  C25D7/06 ,  C25D5/18

CPC classification number: C25D3/562 ,  C25D5/12 ,  C25D7/0607

Abstract: A method of manufacturing a nickel-based alloy barrier layer of a wiring connection terminal includes providing a substrate having a metal wiring; electroplating a nickel or a nickel-based alloy to the metal wiring at a deposition rate of 15-30 μm/hr to form a first layer thereon, wherein the first layer is of a thickness of 0.5 μm-5 μm, and the nickel-based alloy layer has nickel content of at least 50%; and plating a gold layer to the first layer to form thereon a second layer of a thickness of 0.03 μm-0.3 μm. The surface of the nickel-based alloy electroplated layer features a crystalline-phase structure full of micro-protuberances, and the thickness of the gold plated layer is reduced to 0.03 μm.

Abstract translation: 制造布线连接端子的镍基合金阻挡层的方法包括提供具有金属布线的基板; 以15-30μm/小时的沉积速率将镍或镍基合金电镀到金属布线上以在其上形成第一层，其中第一层的厚度为0.5μm-5μm， 镍合金层的镍含量至少为50％; 并将金层电镀到第一层上以在其上形成厚度为0.03μm-0.3μm的第二层。 镍基合金电镀层的表面具有充满微突起的结晶相结构，镀金层的厚度减小到0.03μm。

公开(公告)号：US20190127871A1

公开(公告)日：2019-05-02

申请号：US15801496

申请日：2017-11-02

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHI-HAW CHIANG ,  LIANG-HUEI JIANG ,  REN-RUEY FANG ,  CHIEN-LIANG CHANG ,  YU-PING WANG ,  MING-TA HSIEH

IPC: C25D3/58 ,  H01L21/768

CPC classification number: C25D3/58 ,  C25D3/64 ,  H01L21/76843 ,  H01L21/76873

Abstract: A copper-silver dual-component metal electroplating solution includes copper methanesulfonate, silver methanesulfonate, methanesulfonic acid, chlorine ions, and water. An electroplating method for forming a copper-silver dual-component metal by using such an electroplating solution, the steps of which includes (a) contacting the copper-silver dual-component metal electroplating solution with a substrate; (b) applying an operating voltage, the current density of which is controlled to be between 0.1 and 2 ASD in order to carry out electroplating on the substrate. Therefore, the electroplating solution has environmental characteristics, such as less poisoning hazards, through the design of methanesulfonic acid and methanesulfonate electroplating solution. Also, the potential and the current are adjusted during the electroplating in order to obtain a copper-silver dual-component metal plating layer with a specific silver content.

公开(公告)号：US20150348893A1

公开(公告)日：2015-12-03

申请号：US14289937

申请日：2014-05-29

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHIH WANG ,  CHI-HAW CHIANG ,  YU-PING WANG ,  YANG-KUO KUO

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/49827 ,  H01L23/15 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/49833 ,  H01L2224/131 ,  H01L2224/16235 ,  H01L2924/05032 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/1436 ,  H01L2924/1461 ,  H01L2924/20261 ,  H01L2924/20301 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/40102 ,  H01L2924/40503 ,  H01L2924/00014

Abstract: A method of manufacturing a three-dimensional integrated circuit comprising an aluminum nitride interposer is introduced. The method includes providing a first circuit component; providing a plurality of first conductive blocks on the first circuit component; providing an aluminum nitride interposer on the first circuit component, wherein the aluminum nitride interposer has microvias each comprising therein a conductor with an end in contact with a corresponding one of the first conductive blocks; providing second conductive blocks on the aluminum nitride interposer, wherein the second conductive blocks are in contact with the other ends of the conductors in the microvias; and providing at least a second circuit component disposed on the aluminum nitride interposer and electrically connected to the first circuit component through the first and second conductive blocks and the conductors.

Abstract translation: 引入了包括氮化铝插入件的三维集成电路的制造方法。 该方法包括提供第一电路部件; 在所述第一电路部件上提供多个第一导电块; 在所述第一电路部件上提供氮化铝插入件，其中所述氮化铝插入件具有微孔，每个微孔包括其中与所述第一导电块中的相应一个接触的端部的导体; 在所述氮化铝插入件上提供第二导电块，其中所述第二导电块与所述微孔中导体的另一端接触; 以及提供至少第二电路部件，其设置在所述氮化铝插入件上并通过所述第一和第二导电块和所述导体与所述第一电路部件电连接。