WET PROCESSING APPARATUS
    1.
    发明申请
    WET PROCESSING APPARATUS 审中-公开
    湿处理设备

    公开(公告)号:US20160293401A1

    公开(公告)日:2016-10-06

    申请号:US15037886

    申请日:2014-12-01

    Abstract: A wafer cleaner and a method therefor that efficiently cleans a wafer with a little amount of a cleaning liquid and efficiently performs a heating wet cleaning processing. The present invention includes a stage where a wafer is placed, a rotary driving unit that rotates the stage in a circumferential direction, a liquid discharge nozzle disposed facing the wafer placed on the stage and supplies a cleaning liquid on the wafer placed on the stage, and a control unit that causes the liquid discharge nozzle to supply a space between the wafer placed on the stage and the liquid discharge nozzle with a predetermined amount of the cleaning liquid to fill the space. The present invention also includes a lamp disposed on a position facing the wafer placed on the stage to heat at least an interface portion of the wafer and a cleaning liquid.

    Abstract translation: 一种晶片清洁器及其方法,其用少量清洗液有效地清洗晶片,并有效地执行加湿湿式清洗处理。 本发明包括一个放置晶片的台阶,一个沿圆周方向转动台面的旋转驱动单元,一个面对设置在台架上的晶圆设置的液体排出喷嘴,并将清洗液体提供在放在平台上的晶片上, 以及控制单元,其使得所述液体排出喷嘴在预定量的所述清洁液体之间提供放置在所述台架上的所述晶片与所述液体排出喷嘴之间的空间以填充所述空间。 本发明还包括一个灯,其设置在面向设置在台架上的晶片的位置上,以加热至少晶片的接口部分和清洁液体。

    PROCESS SUBSTRATE WITH CRYSTAL ORIENTATION MARK, METHOD OF DETECTING CRYSTAL ORIENTATION, AND READING DEVICE OF CRYSTAL ORIENTATION MARK
    2.
    发明申请
    PROCESS SUBSTRATE WITH CRYSTAL ORIENTATION MARK, METHOD OF DETECTING CRYSTAL ORIENTATION, AND READING DEVICE OF CRYSTAL ORIENTATION MARK 审中-公开
    具有晶体方位标记的工艺衬底,检测晶体取向的方法和晶体方位标记的读取装置

    公开(公告)号:US20160211218A1

    公开(公告)日:2016-07-21

    申请号:US14913176

    申请日:2014-07-24

    Abstract: To provide a crystal orientation mark which can be formed easily and inexpensively, and which enables to perform high precision alignment and allows information other than crystal orientation to be included, even for a small diameter process substrate. A crystal orientation mark is drawn on the surface of the process substrate. The crystal orientation mark includes a marking region for crystal orientation detection, and a marking region for information. The marking region for crystal orientation detection is provided at two locations in an outer edge portion of the process substrate to be used for the alignment of the process substrate. The marking region for information is provided on a straight-line region connecting the marking regions for crystal orientation detection at the two locations, and includes a pattern for demonstrating predetermined information relating to the process substrate.

    Abstract translation: 为了提供可以容易且廉价地形成的晶体取向标记,并且即使对于小直径处理基板,也能够进行高精度取向并且允许包含晶体取向以外的信息。 在处理基板的表面上绘制晶体取向标记。 晶体取向标记包括用于晶体取向检测的标记区域和用于信息的标记区域。 用于晶体取向检测的标记区域设置在处理基板的外边缘部分的两个位置处,以用于处理基板的对准。 用于信息的标记区域设置在连接两个位置处的晶体取向检测用标记区域的直线区域上,并且包括用于示出与处理基板有关的预定信息的图案。

    METHOD OF MANUFACTURING SEMICONDUCTOR WAFERS
    4.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR WAFERS 有权
    制造半导体波长的方法

    公开(公告)号:US20140154870A1

    公开(公告)日:2014-06-05

    申请号:US14087883

    申请日:2013-11-22

    CPC classification number: H01L21/78 H01L21/02005 H01L21/02008

    Abstract: A method of manufacturing semiconductor wafers is provided which facilitates formation of orientation flat lines and allows beveling work without problems.The method of manufacturing semiconductor wafers according to the present invention is a method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam after the marking step.

    Abstract translation: 提供了制造半导体晶片的方法,其有助于形成取向平线,并且允许斜切加工没有问题。 根据本发明的制造半导体晶片的方法是一种半导体晶片的制造方法,其中从大直径半导体晶片切出多个小直径晶片,该方法包括:标记步骤,形成直槽 通过激光束的方位扁平线与大直径半导体晶片中的每一行中的各个小直径晶片交叉,其中小直径晶片的切割位置沿特定方向排成一行,共同为 每行 以及在标记步骤之后通过激光束与大直径半导体晶片分开切割小直径晶片的切割步骤。

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