公开(公告)号：US20130214320A1

公开(公告)日：2013-08-22

申请号：US13772562

申请日：2013-02-21

Applicant: NICHIA CORPORATION

Inventor： Masahiko ONISHI ,  Shun KITAHAMA

IPC: H01L33/40 ,  H01L33/38

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

公开(公告)号：US20160329465A1

公开(公告)日：2016-11-10

申请号：US15216402

申请日：2016-07-21

Applicant: NICHIA CORPORATION

Inventor： Yohei WAKAI ,  Masahiko ONISHI

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L33/58 ,  H01L2933/0083

Abstract: A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface.

Abstract translation: 一种半导体发光器件，其包括在与其上包括在n型半导体层和p型半导体层之间的发光层的半导体叠层的表面相反的光提取表面上的至少一个凹部。 凹部具有不小于两个斜面，每个斜面在凹部的直径从凹部的开口朝向凹部的凹部变窄的方向上具有不同的倾斜角度，并且具有平缓的倾斜角度的斜面具有不规则性，并且 具有陡峭倾斜角的斜面是平坦表面。

公开(公告)号：US20150129924A1

公开(公告)日：2015-05-14

申请号：US14604453

申请日：2015-01-23

Applicant: NICHIA CORPORATION

Inventor： Masahiko ONISHI ,  Shun KITAHAMA

IPC: H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/52

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

Abstract translation: 在制造半导体发光器件的方法中，形成具有不同导电类型的第一和第二半导体层的半导体层叠体; 去除半导体层叠的一部分以暴露第一半导体层的表面的区域; 形成连接第一和第二半导体层的导体层; 第一电极形成在第一半导体层的暴露区域上，第二电极形成在第二半导体层的上表面上; 形成覆盖第一和第二电极中的至少一个的阻挡层; 并且去除连接第一和第二半导体层的导体层中的连接部分。