Method of manufacturing light emitting element

    公开(公告)号:US11677053B2

    公开(公告)日:2023-06-13

    申请号:US17233767

    申请日:2021-04-19

    摘要: A method of manufacturing a light emitting element includes: providing a first light emitting part and a second light emitting part, the first light emitting part comprising a first base member and a first semiconductor layered body, the second light emitting part comprising a second base member and a second semiconductor layered body; bonding the first and second light emitting parts to each other such that the first base member and the second base member are disposed between the first semiconductor layered body and the second semiconductor layered body; disposing a light reflecting member to cover the bonded first and second light emitting parts; removing a portion of the light reflecting member to expose surfaces of the first and second base members; and disposing a wavelength conversion member on the exposed surface of the first base member and the exposed surface of the second base member.

    Light emitting element, light emitting device, and method of manufacturing light emitting element

    公开(公告)号:US11011688B2

    公开(公告)日:2021-05-18

    申请号:US16682062

    申请日:2019-11-13

    摘要: A light emitting element includes: a light reflecting member including a first region and a second region; a first semiconductor layered body disposed between the first region and the second region and configured to emit first light having a first peak wavelength; a second semiconductor layered body disposed between the first semiconductor layered body and the second region and configured to emit second light having a second peak wavelength different from the first peak wavelength; a base member disposed between the first semiconductor layered body and the second semiconductor layered body; and a wavelength conversion member on which the first light and the second light is incident, the wavelength conversion member producing third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength.

    Light-emitting device
    3.
    发明授权

    公开(公告)号:US11374151B2

    公开(公告)日:2022-06-28

    申请号:US16927256

    申请日:2020-07-13

    发明人: Naoto Furuha

    摘要: A light-emitting device includes a semiconductor stacked body having first and second semiconductor layers. The second semiconductor layer includes conductive portions contacting a second conductive layer and having island configurations. The conductive portions are disposed in a first region, a second region, a third region, and a fourth region. The first region is positioned at a periphery of a first corner of the semiconductor stacked body. The second region is positioned at a periphery of a second corner of the semiconductor stacked body. The third region is positioned at a periphery of a third corner of the semiconductor stacked body. The fourth region is positioned at a periphery of a fourth corner of the semiconductor stacked body. A density of the conductive portions disposed in the first region is greater than densities of the conductive portions disposed in the second region, the third region, and the fourth region.