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公开(公告)号：US20230154884A1
公开(公告)日：2023-05-18
申请号：US17916935
申请日：2021-03-29
发明人： Daizo ODA , Takumi OOKABE , Motoki ETO , Noritoshi ARAKI , Ryo OISHI , Teruo HAIBARA , Tomohiro UNO , Tetsuya OYAMADA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45139
摘要： There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy
0.05
≤
x
1
≤
3.0
,
and
15
≤
x
2
≤
700
where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm],
with the balance including Ag.-
公开(公告)号：US20230142531A1
公开(公告)日：2023-05-11
申请号：US17912824
申请日：2020-03-25
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45124 , H01L2224/45149 , H01L2224/4516 , H01L2224/45171
摘要： There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that the wire contains 0.02 to 1% by mass of Fe, further contains 0.05 to 0.5% by mass in total of at least one or more of Mn and Cr, and the balance includes Al and inevitable impurities, wherein a total content of Fe, Mn and Cr in solid solution is 0.01 to 1% by mass. The Al bonding wire contains Mn and Cr in addition to Fe, so that Fe, Mn and Cr can be promoted to form a solid solution in quenching treatment after the solution treatment. Accordingly, the Al bonding wire can achieve an effect of solid-solution strengthening of the wire due to the increase in the total content of Fe, Mn and Cr in solid solution and an effect of preventing recrystallization from proceeding during use of the semiconductor device at a high temperature for a long time.
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公开(公告)号：US20240266313A1
公开(公告)日：2024-08-08
申请号：US18685871
申请日：2022-10-18
发明人： Tomohiro UNO , Tetsuya OYAMADA , Daizo ODA , Motoki ETO
IPC分类号： H01L23/00 , G01N23/203 , G01N23/2276
CPC分类号： H01L24/45 , H01L24/43 , G01N23/203 , G01N23/2276 , G01N2223/601 , G01N2223/602 , G01N2223/611 , H01L2224/4321 , H01L2224/437 , H01L2224/43825 , H01L2224/43848 , H01L2224/45147 , H01L2224/45541 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/3512 , H01L2924/365
摘要： A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.
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公开(公告)号：US20240110262A1
公开(公告)日：2024-04-04
申请号：US18275599
申请日：2022-01-31
发明人： Tomohiro UNO , Yuya SUTO , Tetsuya OYAMADA , Daizo ODA , Yuto KURIHARA , Motoki ETO
IPC分类号： C22C21/14 , C22C1/02 , C22C21/00 , C22C21/02 , C22C21/08 , C22C21/16 , C22F1/043 , C22F1/047 , C22F1/057 , H01L23/00
CPC分类号： C22C21/14 , C22C1/026 , C22C21/00 , C22C21/02 , C22C21/08 , C22C21/16 , C22F1/043 , C22F1/047 , C22F1/057 , H01L24/45 , H01L2224/45124
摘要： There is provided an Al wiring material which can achieve sufficient bond reliability of bonded parts in a high-temperature environment at the time when a semiconductor device operates. The Al wiring material containing one or more of Pd and Pt so as to satisfy
3≤x1a≤90 or 10≤x1b≤250, and
3≤(x1a+x1b)≤300,
where x1a and x1b are respectively a content of Pd [mass ppm] and a content of Pt [mass ppm],
with the balance comprising Al, and
an average crystal grain diameter on a cross-section perpendicular to a longitudinal direction of the Al wiring material is 3 to 35 μm.-
公开(公告)号：US20220157766A1
公开(公告)日：2022-05-19
申请号：US17437805
申请日：2020-03-12
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
摘要： There is provided a metal-coated Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the metal-coated Al bonding wire is operated. The bonding wire includes a core wire of Al or Al alloy, and a coating layer of Ag, Au or an alloy containing them formed on the outer periphery of the core wire, and the bonding wire is characterized in that when measuring crystal orientations on a cross-section of the core wire in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction. Preferably, the surface roughness of the wire is 2 μm or less in terms of Rz.
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公开(公告)号：US20240071978A1
公开(公告)日：2024-02-29
申请号：US18275177
申请日：2022-01-31
发明人： Yuya SUTO , Tomohiro UNO , Tetsuya OYAMADA , Daizo ODA , Motoki ETO , Yuto KURIHARA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L24/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2924/207
摘要： To provide an Al bonding wire exhibiting a favorable high-temperature and high-humidity service life in a high-temperature and high-humidity environment required for next-generation vehicle-mounted power devices. The Al bonding wire for semiconductor devices containing equal to or larger than 3 mass ppm and equal to or smaller than 500 mass ppm of one or more of Pd and Pt in total, in which, as a result of measuring a crystal orientation on a cross section parallel to a wire axis direction including a wire axis of the bonding wire, an orientation ratio of a crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.
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公开(公告)号：US20230302584A1
公开(公告)日：2023-09-28
申请号：US18023198
申请日：2021-08-24
发明人： Tomohiro UNO , Tetsuya OYAMADA , Yuya SUTO , Daizo ODA , Yuto KURIHARA , Ryo OISHI
CPC分类号： B23K35/286 , H01L24/45 , B23K35/0261 , C22C21/02 , C22C21/08 , H01L2224/45124 , B23K2101/40
摘要： There is provided a novel Al wiring material that achieves a favorable high-temperature reliability as well as a favorable workability and bondability during installation and connection to a device. The Al wiring material contains Mg and Si so as to satisfy 0.05≤x1a≤2.5, 0.02≤x1b≤1, and 0.1≤(x1a+x1b)≤3 where x1a is a content of Mg [% by mass] and x1b is a content of Si [% by mass], and contains one or more selected from the group consisting of Sc, Er, Yb, Gd, Ce and Y so as to satisfy 0.001≤x2≤0.5 where x2 is a total content thereof [% by mass], with the balance comprising Al.
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公开(公告)号：US20220341004A1
公开(公告)日：2022-10-27
申请号：US17764872
申请日：2020-09-17
发明人： Yuto KURIHARA , Ryo OISHI , Motoki ETO , Daizo ODA , Tetsuya OYAMADA , Yuya SUTO , Tomohiro UNO
摘要： There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.
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公开(公告)号：US20220108971A1
公开(公告)日：2022-04-07
申请号：US17553275
申请日：2021-12-16
发明人： Daizo ODA , Takumi OHKABE , Teruo HAIBARA , Takashi YAMADA , Tetsuya OYAMADA , Tomohiro UNO
摘要： Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.
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公开(公告)号：US20240312946A1
公开(公告)日：2024-09-19
申请号：US18275595
申请日：2022-01-31
发明人： Tetsuya OYAMADA , Yuya SUTO , Tomohiro UNO , Daizo ODA , Ryo OISHI , Yuto KURIHARA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45124 , H01L2924/01012 , H01L2924/01014 , H01L2924/01021 , H01L2924/01026 , H01L2924/01028 , H01L2924/0104 , H01L2924/01046 , H01L2924/01078
摘要： To provide an Al bonding wire for semiconductor devices that stably exhibits a favorable bonding strength at a second bonded part. An Al bonding wire for semiconductor devices containing equal to or larger than 0.01 mass % and smaller than 0.8 mass % of one or more of Sc, Zr, and Mg in total, wherein, as a result of measuring a crystal orientation on a cross-section parallel to a wire axis direction including a wire axis of the bonding wire, 10 an orientation ratio of a crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.
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