Abstract:
A method of manufacturing an LED according to an embodiment of the present invention includes:forming a reflective layer on an outer side of a substrate of an LED wafer including the substrate and a light emitting element on one surface of the substrate; andattaching, prior to the forming a reflective layer, a heat-resistant pressure-sensitive adhesive sheet onto an outer side of the light emitting element.
Abstract:
A method of manufacturing an LED according to an embodiment of the present invention includes back-grinding a substrate of an LED wafer including a light emitting element and the substrate, where the back-grinding includes fixing the LED wafer to a table via a double-sided pressure-sensitive adhesive sheet, and then grinding the substrate.
Abstract:
A method of manufacturing an LED including: back-grinding a substrate of an LED wafer including a light emitting element and the substrate; and attaching a protective sheet to the LED wafer one of prior to the back-grinding and after grinding the substrate in the back-grinding.
Abstract:
An object of the invention is to prevent staining of processing equipment by a resin originated from a resin sheet during pressing. The present invention achieves the object by a laminate having a support, a resin sheet that is laminated on a part of the support, and a release sheet that is laminated on the resin sheet, in which a peel force F1 between the support and the resin sheet is larger than a peel force F2 between the resin sheet and the release sheet.
Abstract:
A cleaning sheet comprising a cleaning layer and a releasable protective film laminated on the cleaning layer, wherein each of the relative intensities of the fragment ions of CH3Si+, C3H9Si+, C5H15Si2O+, C5H15Si3O3+, C7H21Si3O2+, CH3SiO−, CH3SiO2− and Si+ in the cleaning layer, when the protective film is peeled off the cleaning layer, is 0.1 or less according to time-of-flight secondary ion mass spectrometry, relative to C2H3+ in the case of positive ion or O− in the case of negative ion.
Abstract translation:一种清洁片,其包括层压在所述清洁层上的清洁层和可释放保护膜,其中所述清洁层中的CH 3 Si +,C 3 H 9 Si +,C 5 H 15 Si 2 O +,C 5 H 15 Si 3 O 3 +,C 7 H 21 Si 3 O 2 +,CH 3 SiO - ,CH 3 SiO 2 - 和Si +的碎片离子的相对强度 当保护膜从清洁层剥离时,根据飞行时间二次离子质谱法,在负离子情况下相对于C2H3 +为0.1或更小,在负离子的情况下为0.1。
Abstract:
A cleaning sheet comprising a cleaning layer and a releasable protective film laminated on the cleaning layer, wherein each of the relative intensities of the fragment ions Of CH3Si+, C3H9Si+, C5H15Si2O+, C5H15Si3O3+, CH3SiO−, CH3SiO2− and Si+ in the cleaning layer, when the protective film is peeled off the cleaning layer, is 0.1 or less according to time-of-flight secondary ion mass spectrometry, relative to C2H3+ in the case of positive ion or O− in the case of negative ion.
Abstract translation:一种清洁片,其包括层压在所述清洁层上的清洁层和可释放保护膜,其中所述清洁层中的CH 3 Si +,C 3 H 9 Si +,C 5 H 15 Si 2 O +,C 5 H 15 Si 3 O 3 +,CH 3 SiO - ,CH 3 SiO 2 - 和Si +的碎片离子的每个相对强度 根据飞行时间二次离子质谱法,保护膜从清洁层剥离,相对于C2H3 +,在负离子的情况下,为0.1以下,在负离子的情况下为O。