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    METHOD AND SYSTEM FOR ENDPOINT DETECTION
    2.
    发明申请
    METHOD AND SYSTEM FOR ENDPOINT DETECTION 有权
    用于端点检测的方法和系统

    公开(公告)号：US20130087098A1

    公开(公告)日：2013-04-11

    申请号：US13628379

    申请日：2012-09-27

    Applicant: NOVA MEASURING INSTRUMENTS LTD.

    Inventor： Moshe Finarov

    IPC: B05C11/10

    CPC classification number: B05C11/1005 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12

    Abstract: A process control system is provided for use with a processing tool for thin film patterning by a material removal processing system. The system includes an optical end-point detector operable within a working area defined by the processing tool when the processing tool is applied to an article, the optical end-point detector performing in-situ measurements of parameters of patterned thin film on the article. An optical integrated monitoring tool is installed with the processing tool and operable outside the working area for measuring parameters of the patterned thin film on the article. A control unit is connected to the end-point detector and to the integrated monitoring tool, and includes processing and computational intelligence responsive to data received from the end-point detector and to the measured data received from the integrated monitoring tool for analyzing data and generating a signal for terminating the patterning of the thin film on the article.

    Abstract translation: 提供了一种与通过材料去除处理系统的用于薄膜图案化的处理工具一起使用的过程控制系统。 该系统包括光学终点检测器，该光学终点检测器可以在将处理工具应用于物品时由处理工具限定的工作区域内操作，该光学终点检测器对物品上的图案化薄膜进行参数的原位测量。 光学集成监控工具与处理工具一起安装，并可在工作区域外操作，用于测量物品上图案化薄膜的参数。 控制单元连接到端点检测器和集成监控工具，并且包括响应于从端点检测器接收的数据和从集成监控工具接收的测量数据的处理和计算智能，用于分析数据并产生 用于终止制品上薄膜图案化的信号。

    Lateral shift measurement using an optical technique
    4.
    发明授权
    Lateral shift measurement using an optical technique 有权
    使用光学技术的侧向位移测量

    公开(公告)号：US08941832B2

    公开(公告)日：2015-01-27

    申请号：US13747937

    申请日：2013-01-23

    Applicant: Nova Measuring Instruments Ltd.

    Inventor： Boaz Brill ,  Moshe Finarov ,  David Schiener

    IPC: G01B11/00 ,  H01L23/544 ,  H01L21/76 ,  G01B11/27 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  H01L21/66

    CPC classification number: G03F7/70633 ,  G01B11/14 ,  G01B11/27 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  H01L22/12

    Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

    Abstract translation: 通过对样品中的测量部位进行光学测量来控制多层样品的制造期间层的对准。 测量部位包括两个分别位于两个不同层之间的衍射结构。 光学测量包括具有不同入射光偏振态的至少两次测量，每个测量包括照亮测量位置，以便通过另一个照射衍射结构之一。 测量部位的衍射特性表示衍射结构之间的横向偏移。 对入射光的不同极化状态分析检测的衍射特性，以确定层之间现有的横向偏移。

    Method and system for endpoint detection
    5.
    发明授权
    Method and system for endpoint detection 有权
    端点检测方法和系统

    公开(公告)号：US08858296B2

    公开(公告)日：2014-10-14

    申请号：US13628379

    申请日：2012-09-27

    Applicant: Nova Measuring Instruments Ltd.

    Inventor： Moshe Finarov

    IPC: B24B49/12 ,  B24B37/013 ,  B05C11/10 ,  B24B49/04

    CPC classification number: B05C11/1005 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12

    Abstract: A process control system is provided for use with a processing tool for thin film patterning by a material removal processing system. The system includes an optical end-point detector operable within a working area defined by the processing tool when the processing tool is applied to an article, the optical end-point detector performing in-situ measurements of parameters of patterned thin film on the article. An optical integrated monitoring tool is installed with the processing tool and operable outside the working area for measuring parameters of the patterned thin film on the article. A control unit is connected to the end-point detector and to the integrated monitoring tool, and includes processing and computational intelligence responsive to data received from the end-point detector and to the measured data received from the integrated monitoring tool for analyzing data and generating a signal for terminating the patterning of the thin film on the article.

    Abstract translation: 提供了一种与通过材料去除处理系统的用于薄膜图案化的处理工具一起使用的过程控制系统。 该系统包括光学终点检测器，该光学终点检测器可以在将处理工具应用于物品时由处理工具限定的工作区域内操作，该光学终点检测器对物品上的图案化薄膜进行参数的原位测量。 光学集成监控工具与处理工具一起安装，并可在工作区域外操作，用于测量物品上图案化薄膜的参数。 控制单元连接到端点检测器和集成监控工具，并且包括响应于从端点检测器接收的数据和从集成监控工具接收的测量数据的处理和计算智能，用于分析数据并产生 用于终止制品上薄膜图案化的信号。

    Method and system for measuring patterned structures
    6.
    发明授权
    Method and system for measuring patterned structures 有权

    公开(公告)号：US09184102B2

    公开(公告)日：2015-11-10

    申请号：US14494981

    申请日：2014-09-24

    Applicant: NOVA MEASURING INSTRUMENTS LTD.

    Inventor： Moshe Finarov ,  Boaz Brill

    IPC: G01B11/14 ,  H01L21/66 ,  G01B11/24 ,  G01N21/21 ,  G01B9/02 ,  G01J3/45

    CPC classification number: G01B11/24 ,  G01B9/02087 ,  G01J3/45 ,  G01N21/21 ,  H01L22/12 ,  H01L22/20

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

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