摘要:
An inspection method according to the embodiments includes applying light of a light source to an inspection target; receiving light from the inspection target to obtain a first image of the inspection target by a sensor; based on an image of a first pattern comprising repetitive patterns unresolvable with a wavelength of the light source in the first image, calculating a deviation of luminance values with respect to each of first regions in the first pattern by a processor; obtaining a second image of the inspection target by the sensor; correcting luminance values of the second image by the processor based on the deviations of the luminance values; and comparing the repetitive patterns of the corrected second image with each other by a comparer.
摘要:
Disclosed is a template substrate for use in adjusting a focus offset to detect a defect using an optical image obtained by irradiating a substrate with light emitted from a light source. The template substrate includes a first pattern constructed with a repetitive pattern that is not resolved by the wavelength of the light source, and at least one alignment mark that is arranged on the same plane as the first pattern. The alignment mark includes a second pattern constructed with a repetitive pattern that is not resolved by the wavelength of the light source, and a programmed defect that is provided in the second pattern and not resolved by the wavelength of the light source. The alignment mark includes the second pattern, and a region, where the second pattern is not arranged but a mark used in alignment is formed by contrast with a region where the second pattern is arranged.
摘要:
An inspection method comprising, virtually dividing a sample, in which a plurality of chip patterns are formed, into a plurality of strip-shaped stripes along a predetermined direction to acquire an optical image of the chip pattern in each of the stripes, performing filtering based on design data of the chip pattern to produce a reference image corresponding to the optical image, comparing the chip pattern using a die-to-database method and comparing a repetitive pattern portion in the chip pattern using a cell method, obtaining at least one of a dimension difference and a dimension ratio between a pattern of the optical image and a pattern of the reference image compared to the pattern of the optical image by the die-to-database method; and obtaining a dimension distribution of the plurality of chip patterns from at least one of the dimension difference and the dimension ratio.
摘要:
An inspection method for inspecting a substrate by using an optical image obtained by irradiating the substrate with light from a light source through an optical unit, and causing the light reflected by the substrate to be incident to a sensor, includes adjusting a focus offset value such that a focal distance for setting the signal-to-noise ratio of a programmed defect to the maximum level, is obtained by acquiring the optical image while changing a focal distance between the surface in which a first pattern is provided and the optical unit. The substrate includes the first pattern, a second pattern on the same plane as the first pattern, the programmed defect in the second pattern, and a third pattern on the same plane as the first pattern. The existence of a defect is detected by acquiring the optical image of the first pattern after the focus offset is adjusted.
摘要:
An inspection apparatus according to embodiments includes a lightening unit, an imaging unit, a first storage unit, a comparison unit, and a first determination unit. The lighting unit irradiates a sample including a defect to be inspected with a lighting light. The imaging unit obtains an optical image formed by the lightening light transmitted through or reflected by the sample to be inspected. The first storage unit stores information on a defect correction method for the defect. The comparison unit compares the optical image and a reference image based on the information on the defect correction method. The first determination unit determines, based on a comparison result by the comparison unit and the information on the defect correction method, whether correction of the defect is appropriate.
摘要:
A mask inspection apparatus includes an optical image acquisition unit configured to acquire an optical image by irradiating light on a mask, a reference image generation unit configured to generate a reference image from design data of the mask, a comparison circuit configured to compare the optical image with the reference image, a pattern data extraction unit configured to obtain coordinates of a defective portion determined to be defective by the comparison unit and to extract, from the design data, pattern data of a predetermined dimension range including the coordinates, and an interface unit configured to supply an aerial image measurement apparatus with information associated with the defect, the information including the defect coordinates and the extracted pattern data.
摘要:
In accordance with one aspect of this invention, a pattern inspection apparatus includes an optical image acquisition unit configured to acquire optical images regarding dies of a target object to be inspected on which the dies having a same pattern formed therein is arranged; a sub-optical image division unit configured to divide an optical image of the optical images regarding a die of the dies positioned in a non-resolved pattern region into sub-optical images using non-resolved pattern region information capable of recognizing the non-resolved pattern region in which a non-resolved pattern that is not resolved is formed; a first comparison unit configured to compare the sub-optical images divided from the optical image of the same die regarding the non-resolved pattern region pixel by pixel; and a second comparison unit configured to compare optical images of the optical images regarding different dies of the dies pixel by pixel.
摘要:
Provided is a pattern inspection method including: irradiating a substrate with an electron beam, a pattern being formed on the substrate; acquiring an inspection image as a secondary electron image of the pattern; setting a pixel value equal to or less than a first threshold value minus a half of a predetermined detection width of the inspection image and a pixel value equal to or more than the first threshold value plus a half of the predetermined detection width of the inspection image to unprocessed; acquiring a difference image between the inspection image having the pixel value having less than the first threshold value minus the half of the predetermined detection width and the pixel value having more of the first threshold value plus the half of the predetermined detection width being set to unprocessed and a reference image of the inspection image; and performing inspection on the basis of the difference image.
摘要:
An electron beam inspection apparatus includes an acquisition processing circuitry to acquire surface material information presenting a surface material of the substrate and a value of an acceleration voltage of an electron beam; a sequence determination processing circuitry to determine a scan sequence of a plurality of stripe regions on the basis of the surface material of the substrate and the value of the acceleration voltage, the plurality of stripe regions obtained by virtually dividing an inspection region of the substrate in a stripe shape; a secondary electron image acquisition mechanism including a detector for detecting a secondary electron and configured to scan the plurality of stripe regions of the substrate according to a determined scan sequence and to acquire a secondary electron image of the substrate; and a comparison processing circuitry to compare the secondary electron image with a corresponding reference image.
摘要:
An electron beam inspection apparatus includes an analyzing circuit to input design pattern data of design pattern of a semiconductor element, and specify a position of a pattern portion including a feature point, which has previously been set, by analyzing the design pattern data; and a comparison circuit to input information on a specified position of the pattern portion including the feature point, and determine by comparing a secondary electron image and a design substrate pattern image of a region corresponding to the secondary electron image while varying a determine threshold value for the pattern portion including the feature point by using the information.