摘要:
A slurry composition for a chemical mechanical processing process includes about 0.05 to about 0.3 percent by weight of a ceria abrasive, about 0.005 to about 0.04 percent by weight of an anionic surfactant, about 0.0005 to about 0.003 percent by weight of a polyoxyethylene-based nonionic surfactant, about 0.2 to about 1.0 percent by weight of a salt of polyacrylic acid having an average molecular weight substantially greater than a molecular weight of the anionic surfactant, and a remainder of water. In addition, a method of polishing an object layer and a method of manufacturing a semiconductor device using the slurry composition are also provided.
摘要:
A slurry composition for a chemical mechanical processing process includes about 0.05 to about 0.3 percent by weight of a ceria abrasive, about 0.005 to about 0.04 percent by weight of an anionic surfactant, about 0.0005 to about 0.003 percent by weight of a polyoxyethylene-based nonionic surfactant, about 0.2 to about 1.0 percent by weight of a salt of polyacrylic acid having an average molecular weight substantially greater than a molecular weight of the anionic surfactant, and a remainder of water. In addition, a method of polishing an object layer and a method of manufacturing a semiconductor device using the slurry composition are also provided.
摘要:
Methods of polishing an object layer and for manufacturing a non-volatile memory device that incorporates such a polished object layer using a specially formulated slurry composition are disclosed. The slurry compositions include a ceria abrasive, a nonionic surfactant having a hydrophilic-lipophilic balance (HLB) value in a range of about 12 to about 17, and water. The nonionic surfactant is selected such that it may be adsorbed onto a hydrophobic layer to protect the hydrophobic layer from the ceria abrasive during a polishing operation. The slurry compositions may have a relatively high polishing rate for a hydrophilic layer and at the same time a relatively low polishing rate for a hydrophobic layer. Thus, the slurry compositions may be applied during a process for polishing the hydrophilic layer using the hydrophobic layer as a polishing stop layer.
摘要:
A polishing pad of a CMP apparatus has a plurality of pores. A characteristic associated with the pores, such as average size or pore density, varies substantially from region to region of the pad across the pad in a diametral direction of the pad. The polishing pad can be designed and manufactured using sample pads whose pore characteristics differ from each other. CMP test processes are performed in which the sample pads are used to polish test wafers, and the rates at which the test wafers are polished are measured and stored in a database. The polishing pad is fabricated using data from the database so that a chemical mechanical polishing apparatus employing the pad will polish wafers with a high degree of uniformity. The database can be used to select sample pads from a stockpile. Sections of the sample pads are cut out, respectively, and fastened to one another.
摘要:
The present invention relates to a conditioner device for polishing pad and a chemical mechanical polishing (CMP) apparatus having the same. The conditioner device of the present invention comprises a rotable support plate including a support plate surface comprising a center area located about the rotational axis of the support plate, a mid area surrounding the center area, and a peripheral area surrounding the mid area, a plurality of conditioning zones located within a portion of the mid area of the support plate surface. A plurality of hard particles which are densely arranged within the conditioning zones and are attached to the support plate surface. A plurality of passages defined by the conditioning zones within which a slurry flows, the passages occupying a portion of the mid area which is not occupied by the conditioning zones, the center area and the peripheral area.
摘要:
A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include lysine, proline and arginine. Examples of the glycol compound include diethylene glycol, ethylene glycol and polyethylene glycol.
摘要:
A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include lysine, proline and arginine. Examples of the glycol compound include diethylene glycol, ethylene glycol and polyethylene glycol.
摘要:
A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include lysine, proline and arginine. Examples of the glycol compound include diethylene glycol, ethylene glycol and polyethylene glycol.
摘要:
A slurry composition, a method of polishing polysilicon layers using the slurry composition, and a method of manufacturing a semiconductor device using the same, wherein the slurry composition includes an abrasive in an amount of about 1 to about 20 percent by weight of the slurry composition, a non-ionic surfactant in an amount of about 0.005 to about 1 percent by weight of the slurry composition, and a solvent having a basic compound.
摘要:
A pad conditioner may include a surface having a first region including a portion having relatively irregular shaped and friable polishing particles, and a second region including a portion having relatively regular shaped and tough polishing particles. The relatively regular shaped and tough polishing particles may be provided on the edge portion of the surface and the relatively irregular shaped and friable polishing particles may be provided on the center portion of the surface.