公开(公告)号：US20100187096A1

公开(公告)日：2010-07-29

申请号：US12691437

申请日：2010-01-21

申请人： Naofumi Aoki ,  Tamaki Kobayashi

发明人： Naofumi Aoki ,  Tamaki Kobayashi

IPC分类号： C23C14/34

CPC分类号： C23C14/067 ,  C23C14/35 ,  C23C14/54 ,  H01J1/148 ,  H01J9/042 ,  H01J9/148

摘要： A lanthanum boride film is deposited on a substrate by means of a sputtering method while moving the substrate and a target of lanthanum boride relative to each other in a state where the substrate and the target are arranged in opposition to each other. When a mean free path of sputtering gas molecules at the time of deposition is λ (mm) and a distance between the substrate and the target is L (mm), a ratio of L/λ is set to a value equal to or larger than 20. A value which is obtained by dividing a discharge power value by an area of the target is set to be in a range of from 1 W/cm2 or more to 5 W/cm2 or less.

摘要翻译： 在基板和靶相对配置的状态下，通过溅射法在基板上沉积硼硅酸钡膜，同时相对于彼此移动基板和硼化镧靶。 当沉积时溅射气体分子的平均自由程为λ（mm），基板与目标之间的距离为L（mm）时，将L /λ的比设定为等于或大于 通过将放电功率值除以目标的面积而获得的值设定为1W / cm 2以上至5W / cm 2以下的范围。

公开(公告)号：US20100187095A1

公开(公告)日：2010-07-29

申请号：US12691454

申请日：2010-01-21

申请人： Naofumi Aoki ,  Tomoyasu Mizuno ,  Tamaki Kobayashi ,  Yusuke Miyamoto

发明人： Naofumi Aoki ,  Tomoyasu Mizuno ,  Tamaki Kobayashi ,  Yusuke Miyamoto

IPC分类号： C23C14/46

CPC分类号： C23C14/225 ,  C23C14/067 ,  C23C14/35 ,  C23C14/54

摘要： A boride film is deposited on a substrate through an opening portion a shield member located between the substrate and a target by means of a sputtering method. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of plasma density in a space between the substrate and the target is set in such a manner that a plasma density in a region in which the opening portion is located becomes higher than a plasma density in a region shielded by the shield member.

摘要翻译： 通过溅射法将位于基板和靶之间的屏蔽部件的开口部分在基板上沉积硼化膜。 屏蔽构件被布置成屏蔽目标的侵蚀区域和基板之间。 在基板和靶之间的空间中的等离子体密度的分布被设定为使得开口部分所在的区域中的等离子体密度高于屏蔽部件屏蔽的区域中的等离子体密度。

公开(公告)号：US08022608B2

公开(公告)日：2011-09-20

申请号：US12481851

申请日：2009-06-10

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H01J1/88 ,  H01J1/30

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US07786658B1

公开(公告)日：2010-08-31

申请号：US12421773

申请日：2009-04-10

申请人： Junya Tanaka ,  Shin Kitamura ,  Tamaki Kobayashi ,  Tsuyoshi Takegami

发明人： Junya Tanaka ,  Shin Kitamura ,  Tamaki Kobayashi ,  Tsuyoshi Takegami

IPC分类号： H01J1/02

CPC分类号： H01J1/3046 ,  H01J3/022 ,  H01J31/127 ,  H01J2329/0423

摘要： An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.

摘要翻译： 电子发射器件具有绝缘层，具有侧表面，形成在绝缘层的侧表面上的凹陷部分，设置在凹部上方的栅电极和布置在边缘上的楔形发射体 并且在所述凹部的一侧具有第一斜面，在与所述凹部相反的一侧具有第二斜面。 发射体的第一斜面的下端进入凹部，发光体的第一斜面和第二斜面都向凹部的外侧倾斜。

公开(公告)号：US20100201246A1

公开(公告)日：2010-08-12

申请号：US12421773

申请日：2009-04-10

申请人： Junya Tanaka ,  Shin Kitamura ,  Tamaki Kobayashi ,  Tsuyoshi Takegami

发明人： Junya Tanaka ,  Shin Kitamura ,  Tamaki Kobayashi ,  Tsuyoshi Takegami

IPC分类号： H01J1/02

CPC分类号： H01J1/3046 ,  H01J3/022 ,  H01J31/127 ,  H01J2329/0423

摘要： An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.

摘要翻译： 电子发射器件具有绝缘层，具有侧表面，形成在绝缘层的侧表面上的凹陷部分，设置在凹部上方的栅电极和布置在边缘上的楔形发射体 并且在所述凹部的一侧具有第一斜面，在与所述凹部相反的一侧具有第二斜面。 发射体的第一斜面的下端进入凹部，发光体的第一斜面和第二斜面都向凹部的外侧倾斜。

公开(公告)号：US07513814B2

公开(公告)日：2009-04-07

申请号：US11159308

申请日：2005-06-23

申请人： Tamaki Kobayashi ,  Keisuke Yamamoto ,  Hisashi Sakata

发明人： Tamaki Kobayashi ,  Keisuke Yamamoto ,  Hisashi Sakata

IPC分类号： H01J9/00 ,  H01J9/24

CPC分类号： H01J9/027

摘要： An effective voltage V′ effectively applied to a gap 7 during an “activation step” is controlled to a desired value. In the “activation step”, a voltage is repeatedly applied between a first electroconductive film 4a and a second electroconductive film 4b while controlling voltages outputted from a voltage source 51 so that a value βeffect becomes a desired value.

摘要翻译： 在“激活步骤”期间有效地施加到间隙7的有效电压V'被控制到期望值。 在“激活步骤”中，在控制从电压源51输出的电压的同时，在第一导电膜4a和第二导电膜4b之间重复地施加电压，使得值效应成为期望值。

公开(公告)号：US20050236965A1

公开(公告)日：2005-10-27

申请号：US11106636

申请日：2005-04-15

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J1/316 ,  H01J9/02 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与衬底接触形成在衬底上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。

公开(公告)号：US06225749B1

公开(公告)日：2001-05-01

申请号：US09395945

申请日：1999-09-14

申请人： Tamaki Kobayashi ,  Noritake Suzuki

发明人： Tamaki Kobayashi ,  Noritake Suzuki

IPC分类号： G09G310

CPC分类号： G09G3/22 ,  G09G3/2014 ,  G09G2310/0275 ,  G09G2320/04 ,  G09G2320/043 ,  H01J31/127 ,  H01J2201/3165

摘要： An emission current (Ie1) emitted by the electron-emitting device and/or a device current (If1) flowing through the electron-emitting device are measured when a voltage (V1) is applied to the electron-emitting device and an emission current (Ie2) emitted by the electron-emitting device and/or a device current (If2) flowing through the electron-emitting device are measured when the voltage (V1) is applied to the electron-emitting device after the measurement step. A voltage (V2) higher than the voltage (V1) is applied to the electron-emitting device when the emission current (Ie2) is larger than the emission current (Ie1) and/or the device current (If2) is larger than the device current (If1).

摘要翻译： 当对电子发射器件施加电压（V1）和发射电流（V1）时，测量由电子发射器件发射的发射电流（Ie1）和/或流过电子发射器件的器件电流（If1） Ie2）和/或流过电子发射器件的器件电流（If2）被测量，当在测量步骤之后将电压（V1）施加到电子发射器件时。 当发射电流（Ie2）大于发射电流（Ie1）和/或器件电流（If2）大于器件时，向电子发射器件施加高于电压（V1）的电压（V2） 当前（If1）。

公开(公告)号：US08177987B2

公开(公告)日：2012-05-15

申请号：US12637978

申请日：2009-12-15

申请人： Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

发明人： Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

IPC分类号： H01B13/00

CPC分类号： H01J9/025 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film.

摘要翻译： 一种电子发射器件的制造方法，包括在包括侧面的绝缘层和与侧面连接的顶面的侧面上形成第一导电膜; 从所述顶表面到所述侧表面和所述第一导电膜上形成第二导电膜; 并蚀刻第二导电膜。

公开(公告)号：US20100159790A1

公开(公告)日：2010-06-24

申请号：US12421758

申请日：2009-04-10

申请人： Kenichi Iwata ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Shin Kitamura

发明人： Kenichi Iwata ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Shin Kitamura

IPC分类号： H01J9/04

CPC分类号： H01J31/127 ,  H01J1/3046 ,  H01J29/04 ,  H01J2201/30423 ,  H01J2329/0423

摘要： A method of manufacturing an electron-emitting device includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film. At the first step, the conductive film is formed so that film density of a portion on the side surface of the insulating layer becomes lower than film density of a portion on the corner portion of the insulating layer.

摘要翻译： 制造电子发射器件的方法包括：第一步骤，在具有上表面和侧表面的绝缘层上形成导电膜，所述绝缘层经由拐角部分从所述侧表面延伸到所述上表面 表面并覆盖角部的至少一部分，以及蚀刻导电膜的第二步骤。 在第一步骤中，形成导电膜，使得绝缘层的侧表面上的部分的膜密度变得低于绝缘层的角部上的部分的膜密度。