公开(公告)号：US20120146045A1

公开(公告)日：2012-06-14

申请号：US13212539

申请日：2011-08-18

申请人： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

发明人： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.

摘要翻译： 根据一个实施例，半导体发光器件包括发光层，透光层和第一半导体层。 透光层相对于从发光层发射的光是可透射的。 第一半导体层与发光层和透光层之间的透光层接触。 透光层的热膨胀系数大于透光层的热膨胀系数，其晶格常数小于有源层的晶格常数，并且在面内方向具有拉伸应力。

公开(公告)号：US20120217471A1

公开(公告)日：2012-08-30

申请号：US13213373

申请日：2011-08-19

申请人： Tomonari SHIODA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

发明人： Tomonari SHIODA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.

摘要翻译： 根据一个实施例，一种半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。 发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。 第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。 第一阻挡层设置在n侧势垒层和p型半导体层之间。 第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。 第一AlGaN层设置在第一阱层和第一势垒层之间。 从发光部发出的光的峰值波长λp长于515nm。

公开(公告)号：US20140084296A1

公开(公告)日：2014-03-27

申请号：US13729713

申请日：2012-12-28

申请人： Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L29/2003 ,  H01L21/02104 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/0649 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/12

摘要： A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.

摘要翻译： 氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。 硅衬底具有主表面。 堆叠的多层单元设置在主表面上。 堆叠的多层单元包括N个缓冲层。 缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。 第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。 第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。 对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。 含硅单元设置在堆叠的多层单元上。 上层单元设置在含硅单元上。

公开(公告)号：US20140061693A1

公开(公告)日：2014-03-06

申请号：US13626265

申请日：2012-09-25

申请人： Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L31/0304 ,  H01L21/20 ,  H01L29/205

CPC分类号： H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262

摘要： According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008.

摘要翻译： 根据一个实施例，氮化物半导体晶片包括：硅衬底; 设置在所述硅基板上的缓冲部; 以及设置在缓冲部上并包含氮化物半导体的功能层。 缓冲部包括含有氮化物半导体的第一〜第n缓冲层（n为4以上的整数）。 第一至第n缓冲层的第i个缓冲层（i为1以上且小于n的整数）在平行于第一缓冲层的主面的第一方向上具有晶格长度Wi。 设置在第i个缓冲层上的第（i + 1）个缓冲层在第一方向上具有晶格长度W（i + 1）。 在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足关系式（W（i + 1）-Wi）/ Wi0.008。

公开(公告)号：US20130237036A1

公开(公告)日：2013-09-12

申请号：US13604183

申请日：2012-09-05

申请人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC分类号： H01L21/02

CPC分类号： H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

公开(公告)号：US20110304102A1

公开(公告)日：2011-12-15

申请号：US13016489

申请日：2011-01-28

申请人： Hisashi YOSHIDA ,  Motofumi INABA ,  Minoru TAKAYASU

发明人： Hisashi YOSHIDA ,  Motofumi INABA ,  Minoru TAKAYASU

IPC分类号： F16J15/32

CPC分类号： F16J15/3212 ,  B63H23/321 ,  F16J15/322 ,  F16J15/3244 ,  F16J15/40

摘要： (Means) A seal ring in which an apex part of the key part is formed so that the cross-section profile regarding the apex part forms a reversed V-shape toward the outside in the radial direction; the summit T of the reversed V-shape is formed as the middle center T of the apex part; a step part on the front surface side of the key part and a step part on the back surface side of the key part are formed so that the width of the seal ring in the axis direction of the ship propulsion shaft becomes thinner in the transition area from the key part toward the heel part; the inner diameter of the key part at the step part on the back surface side of the key part is greater than the inner diameter of the key part at the step part on the front surface side of the key part; a lip tip of the lip part forms a V-shape protruding inward in the radial direction and a spring groove having a semicircular cross-section in which a ringed spring is formed in the lip part; the center regarding the spring groove is arranged so as to be nearer to the inboard side than the position of the lip tip, by an offset in the ship propulsion shaft axis direction, the offset being within approximately 10% of the orthogonal projection length of the lip back width.

摘要翻译： （装置）密封环，其中形成关键部分的顶点部分，使得关于顶点的横截面轮廓在径向方向上朝向外部形成反向的V形; 反转的V字形的顶点T形成为顶点的中心T; 键部的前表面侧的阶梯部和键部的背面侧的台阶部形成为使得密封环在船舶推进轴的轴向上的宽度在过渡区域变薄 从关键部分向脚跟部分; 键部的背面侧的阶梯部的键部的内径大于键部的表面侧的台阶部的键部的内径， 唇部的唇部尖端形成向径向内侧突出的V形状，弹性槽具有半圆形截面，在唇部形成有环形弹簧; 弹簧槽的中心配置成比唇尖的位置更靠近内侧，通过船舶推进轴轴向的偏移，偏移量在船的推进轴轴方向的正交投影长度的约10％以内 唇背宽度。

公开(公告)号：US20080193355A1

公开(公告)日：2008-08-14

申请号：US12099515

申请日：2008-04-08

申请人： Hisashi YOSHIDA ,  Ryo Yoshimatsu

发明人： Hisashi YOSHIDA ,  Ryo Yoshimatsu

IPC分类号： C01F17/00

CPC分类号： C09K11/778 ,  H01J61/44 ,  H01J2211/42 ,  Y02B20/181

摘要： This invention is intended to overcome the problems with conventional phosphor materials, specifically to overcome the problems of insufficient luminance and of color impurity on the screens of color display units when green phosphor materials have blue or red light emission. This invention is intended to provide vacuum ultraviolet excited green phosphor materials that include terbium, gadolinium-doped rare-earth aluminum scandium borate represented by the following general formula: (Y1-x-yGdxTby)Al3-zScz(BO3)4 (0≦x

摘要翻译： 本发明旨在克服常规荧光体材料的问题，特别是克服当绿色荧光体材料具有蓝色或红色发光时彩色显示单元的屏幕上的亮度不足和彩色杂质的问题。 本发明旨在提供真空紫外激发的绿色荧光体材料，其包括由以下通式表示的铽掺杂的掺杂钆的稀土钪硼酸铋：（Y 1-xy≡≡ （3）（3）（3）（3）（3）（3） （0 <= x <0.5,0