Cathode Material for Secondary Battery, Method for Producing Cathode Material for Secondary Battery and Secondary Battery
    4.
    发明申请
    Cathode Material for Secondary Battery, Method for Producing Cathode Material for Secondary Battery and Secondary Battery 有权
    二次电池用阴极材料,二次电池和二次电池用阴极材料的制造方法

    公开(公告)号:US20080131777A1

    公开(公告)日:2008-06-05

    申请号:US10577279

    申请日:2004-10-26

    IPC分类号: H01M4/52

    摘要: A positive electrode material is disclosed which contains an iron lithium phosphate as a positive electrode active material and has a large charge/discharge capacity, high-rate adaptability, and good charge/discharge cycle characteristics at the same time. Also disclosed are a simple method for producing such a positive electrode material and a high-performance secondary battery employing such a positive electrode material. Specifically, disclosed is a positive electrode material for secondary battery characterized by mainly containing a positive electrode active material represented by the general formula: LinFePO4 (wherein n is a number of 0-1) and further containing at least one different metal element selected from the group consisting of vanadium (V), chromium (Cr), copper (Cu), zinc (Zn), indium (In) and tin (Sn). This positive electrode material can be produced using a halide of such a metal element as the raw material.

    摘要翻译: 公开了一种正极材料,其包含磷酸铁锂作为正极活性物质,并且具有大的充电/放电容量,高速率适应性和良好的充电/放电循环特性。 还公开了制造这种正极材料的简单方法和使用这种正极材料的高性能二次电池。 具体地,公开了一种二次电池用正极材料,其特征在于,主要含有以下通式表示的正极活性物质:其中,n为数 并且还含有选自钒(V​​),铬(Cr),铜(Cu),锌(Zn),铟(In)和锡(Sn)中的至少一种不同的金属元素。 这种正极材料可以使用这种金属元素作为原料的卤化物来制造。

    Cathode material for secondary battery, method for producing cathode material for secondary battery and secondary battery
    6.
    发明授权
    Cathode material for secondary battery, method for producing cathode material for secondary battery and secondary battery 有权
    用于二次电池的阴极材料,二次电池和二次电池用阴极材料的制造方法

    公开(公告)号:US08119285B2

    公开(公告)日:2012-02-21

    申请号:US10577279

    申请日:2004-10-26

    IPC分类号: H01M4/36

    摘要: A positive electrode material is disclosed which contains an iron lithium phosphate as a positive electrode active material and has a large charge/discharge capacity, high-rate adaptability, and good charge/discharge cycle characteristics at the same time. Also disclosed are a simple method for producing such a positive electrode material and a high-performance secondary battery employing such a positive electrode material. Specifically, disclosed is a positive electrode material for secondary battery characterized by mainly containing a positive electrode active material represented by the general formula: LinFePO4 (wherein n is a number of 0-1) and further containing at least one different metal element selected from the group consisting of vanadium (V), chromium (Cr), copper (Cu), zinc (Zn), indium (In) and tin (Sn). This positive electrode material can be produced using a halide of such a metal element as the raw material.

    摘要翻译: 公开了一种正极材料,其包含磷酸铁锂作为正极活性物质,并且具有大的充电/放电容量,高速率适应性和良好的充电/放电循环特性。 还公开了制造这种正极材料的简单方法和使用这种正极材料的高性能二次电池。 具体地说,公开了一种二次电池用正极材料,其特征在于,主要含有由通式:LinFePO 4(其中n为0〜1的数)表示的正极活性物质,还含有至少一种选自 由钒(V),铬(Cr),铜(Cu),锌(Zn),铟(In)和锡(Sn)组成的组。 这种正极材料可以使用这种金属元素作为原料的卤化物来制造。

    Process for Producing Silicon Carbide Single Crystal
    9.
    发明申请
    Process for Producing Silicon Carbide Single Crystal 有权
    生产碳化硅单晶的工艺

    公开(公告)号:US20080289570A1

    公开(公告)日:2008-11-27

    申请号:US11886065

    申请日:2006-05-23

    IPC分类号: C30B23/02

    摘要: This invention reduces planar defects which occur within a silicon carbide single crystal when a silicon carbide single crystal is epitaxially grown on a single crystal substrate.The process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is epitaxially grown on the surface of a single crystal substrate is a process in which a plurality of undulations that extend in a single, substantially parallel direction on the substrate surface is formed on the single crystal substrate surface; undulation ridges on the single crystal substrate undulate in the thickness direction of the single crystal substrate; and the undulations are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.

    摘要翻译: 本发明减少了在单晶衬底上外延生长碳化硅单晶时在碳化硅单晶中发生的平面缺陷。 在单晶基板的表面上外延生长碳化硅单晶层的碳化硅单晶的制造方法是在基板表面上沿单个大致平行的方向延伸的多个起伏 形成在单晶基板表面上; 单晶基板上的起伏脊在单晶基板的厚度方向上波动; 并且布置波纹,使得由与碳化硅单晶的外延生长一起传播的反相边界和/或双带组成的平面缺陷彼此合并。

    Process for producing silicon carbide single crystal
    10.
    发明授权
    Process for producing silicon carbide single crystal 有权
    生产碳化硅单晶的方法

    公开(公告)号:US08133321B2

    公开(公告)日:2012-03-13

    申请号:US11886065

    申请日:2006-05-23

    IPC分类号: C30B25/18

    摘要: A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate, wherein a plurality of substantially parallel undulation ridges that extend in a first direction on the single crystal substrate surface is formed on said single crystal substrate surface; each of the undulation ridges on said single crystal substrate surface has a height that undulates as each of the undulation ridges extends in the first direction; and the undulation ridges are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.

    摘要翻译: 一种碳化硅单晶的制造方法,其中碳化硅单晶层在单晶衬底的表面上同构外延生长或异质外延生长,其中沿着第一方向延伸的多个基本上平行的波纹脊 所述单晶衬底表面形成在所述单晶衬底表面上; 所述单晶衬底表面上的每个波纹脊具有随着每个波纹脊在第一方向上延伸的波状的高度; 并且布置隆起脊,使得由与碳化硅单晶的外延生长一起传播的反相边界和/或双带组成的平面缺陷彼此合并。