公开(公告)号：US5710050A

公开(公告)日：1998-01-20

申请号：US506239

申请日：1995-07-24

申请人： Naoki Makita ,  Tadayoshi Miyamoto

发明人： Naoki Makita ,  Tadayoshi Miyamoto

IPC分类号： H01L21/68 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1277 ,  Y10S438/975

摘要： The semiconductor device of the invention includes: a substrate having an insulating surface; and an active region which is formed on the insulating surface of the substrate and is constituted by a crystalline silicon film. In the semiconductor device, the active region is formed inside a crystalline silicon region formed by selective crystallization of an amorphous silicon film, and the active region is positioned by performing a mask alignment using a boundary between an amorphous silicon region of the amorphous silicon film and the crystalline silicon region.

摘要翻译： 本发明的半导体器件包括：具有绝缘表面的衬底; 以及形成在基板的绝缘表面上并由结晶硅膜构成的有源区。 在半导体器件中，有源区形成在通过非晶硅膜的选择性结晶形成的晶体硅区域的内侧，通过使用非晶硅膜的非晶硅区域和 晶体硅区域。

公开(公告)号：US6013544A

公开(公告)日：2000-01-11

申请号：US610227

申请日：1996-03-04

申请人： Naoki Makita ,  Tadayoshi Miyamoto ,  Tsukasa Shibuya

发明人： Naoki Makita ,  Tadayoshi Miyamoto ,  Tsukasa Shibuya

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277

摘要： A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed. A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film. Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film. Then, the upper crystalline silicon semiconductor film is removed. By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film. As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reduced.

摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件包括通过利用形成在绝缘衬底上的具有结晶性的硅半导体膜而获得的有源区。 通过将用于促进结晶的催化剂元素引入到下部非晶硅半导体膜中，然后对下部非晶硅半导体膜进行热处理，获得结晶硅半导体膜。 此后，在所获得的下部结晶硅半导体膜上形成上部非晶硅半导体膜，随后对其进行热处理，以获得上部结晶硅半导体膜。 然后，除去上部晶体硅半导体膜。 通过该工艺，残留在下结晶硅半导体膜中的催化剂元素移动到上结晶硅半导体膜中。 结果，下层结晶硅半导体膜中的催化剂元素的浓度降低。

公开(公告)号：US6162667A

公开(公告)日：2000-12-19

申请号：US408869

申请日：1995-03-23

申请人： Takashi Funai ,  Naoki Makita ,  Yoshitaka Yamamoto ,  Tadayoshi Miyamoto ,  Takamasa Kousai ,  Masashi Maekawa

发明人： Takashi Funai ,  Naoki Makita ,  Yoshitaka Yamamoto ,  Tadayoshi Miyamoto ,  Takamasa Kousai ,  Masashi Maekawa

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/00

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/66757

摘要： In a fabrication of a semiconductor device, an amorphous semiconductor film is first formed on a substrate having an insulating surface. Then, a minute amount of catalyst elements for accelerating crystallization of the amorphous semiconductor film is supplied to at least a portion of a surface of the amorphous semiconductor film. A heat treatment is further conducted so that the supplied catalyst elements are diffused into the amorphous semiconductor film. Thus, the catalyst elements are introduced uniformly into the amorphous semiconductor film in a very minute amount or at a low concentration, resulting in polycrystallization of at least a portion of the amorphous semiconductor film. Utilizing the thus obtained crystalline semiconductor film on the substrate surface as an active region, a semiconductor device such as a TFT is fabricated. The introduction of the catalyst elements are conducted by various methods such as: a formation of a film containing a minute amount of the catalyst elements; application of a solution containing the catalyst elements in several spin coating cycles; diffusion of the catalyst elements through a buffer layer; dipping into a solution in which the catalyst elements are dissolved or dispersed; or formation of a plating layer containing the catalyst elements.

摘要翻译： 在半导体器件的制造中，首先在具有绝缘表面的衬底上形成非晶半导体膜。 然后，将少量用于加速非晶半导体膜的结晶的催化剂元素供给到非晶半导体膜的表面的至少一部分。 进一步进行热处理，使得所提供的催化剂元素扩散到非晶半导体膜中。 因此，催化剂元素以非常微量或低浓度均匀地引入到非晶半导体膜中，导致至少一部分非晶半导体膜的多晶化。 利用由此获得的晶体半导体膜作为有源区，在衬底表面上制造诸如TFT的半导体器件。 催化剂元素的引入通过各种方法进行，例如：形成含有微量催化剂元素的膜; 在几个旋涂周期中应用含有催化剂元素的溶液; 催化剂元件通过缓冲层的扩散; 浸入催化剂元素溶解或分散的溶液中; 或形成含有催化剂元素的镀层。

公开(公告)号：US5814835A

公开(公告)日：1998-09-29

申请号：US558501

申请日：1995-11-16

申请人： Naoki Makita ,  Tadayoshi Miyamoto ,  Tsukasa Shibuya ,  Masashi Maekawa

发明人： Naoki Makita ,  Tadayoshi Miyamoto ,  Tsukasa Shibuya ,  Masashi Maekawa

IPC分类号： H01L27/146 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/78654 ,  H01L21/2022 ,  H01L27/1214 ,  H01L29/66757

摘要： The semiconductor device of invention includes: a substrate having an insulating surface; and an element region formed by crystallizing an amorphous silicon film, the element region being provided on the insulating surface of the substrate. In the semiconductor device, the element region is constituted by a laterally crystallized region formed by crystallizing the amorphous silicon film from a linearly crystallized region crystallized by a selective introduction of catalyst elements for promoting a crystallization of the amorphous silicon film to a region surrounding the linearly crystallized region by performing a heat-treatment, and a concentration of the catalyst elements in at least one of the laterally crystallized region and the linearly crystallized region is controlled by a line width of an introduction setting region having a linear planar pattern, the line width being set so as to selectively introduce the catalyst elements.

摘要翻译： 本发明的半导体器件包括：具有绝缘表面的衬底; 以及通过使非晶硅膜结晶而形成的元件区域，所述元件区域设置在所述基板的绝缘表面上。 在半导体器件中，元件区域由通过选择性引入催化剂元素结晶的线性结晶区域使非晶硅膜结晶而形成的横向结晶区域，用于促进非晶硅膜的结晶化到线性区域 通过进行热处理的结晶化区域，并且横向结晶化区域和直线结晶化区域中的至少一个中的催化剂元素的浓度由具有线性平面图案的引入设定区域的线宽度，线宽度 被设定为选择性地引入催化剂元素。

公开(公告)号：US5821562A

公开(公告)日：1998-10-13

申请号：US452693

申请日：1995-05-30

申请人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

发明人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/06 ,  H01L31/036

CPC分类号： H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016

摘要： Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.

摘要翻译： 引入非晶硅膜，用于加速结晶的催化剂元素。 在将催化剂元素引入岛状图案的非晶硅膜图案化之后，进行结晶化的热处理。 因此，引入的催化剂元件仅在岛状图案化的非晶硅膜的内部有效地扩散。 结果，获得了晶体生长方向在一个方向上排列并且不具有晶界的高质量晶体硅膜。 使用如此形成的晶体硅膜，无论器件尺寸如何，都能在整个基板上有效地制造具有高性能和稳定特性的半导体器件。

公开(公告)号：US5696003A

公开(公告)日：1997-12-09

申请号：US357648

申请日：1994-12-16

申请人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

发明人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016

摘要： Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.

摘要翻译： 引入非晶硅膜，用于加速结晶的催化剂元素。 在将催化剂元素引入岛状图案的非晶硅膜图案化之后，进行结晶化的热处理。 因此，引入的催化剂元件仅在岛状图案化的非晶硅膜的内部有效地扩散。 结果，获得了晶体生长方向在一个方向上排列并且不具有晶界的高质量晶体硅膜。 使用如此形成的晶体硅膜，无论器件尺寸如何，都能在整个基板上有效地制造具有高性能和稳定特性的半导体器件。

公开(公告)号：US08999823B2

公开(公告)日：2015-04-07

申请号：US13125865

申请日：2009-10-20

申请人： Naoki Makita ,  Hiroshi Nakatsuji

发明人： Naoki Makita ,  Hiroshi Nakatsuji

IPC分类号： H01L27/12 ,  H01L27/146 ,  G09G5/10 ,  G06F3/042 ,  H01L29/786

CPC分类号： H01L27/14665 ,  G06F3/042 ,  G09G5/10 ,  H01L27/12 ,  H01L27/1229 ,  H01L29/78633

摘要： A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.

摘要翻译： 根据本发明的半导体器件包括薄膜晶体管和薄膜二极管。 各半导体层以及薄膜晶体管和薄膜二极管是通过使相同的结晶半导体膜结晶而形成的结晶半导体层。 已经在薄膜二极管的半导体层的表面上形成了脊。 并且薄膜二极管的半导体层具有比薄膜晶体管的半导体层更大的表面粗糙度。

公开(公告)号：US08460954B2

公开(公告)日：2013-06-11

申请号：US13125776

申请日：2009-10-22

申请人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

发明人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/66757 ,  G02F1/1368 ,  G02F2001/13312 ,  H01L27/0629 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/14612 ,  H01L29/78633 ,  H01L29/861

摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.

摘要翻译： 半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。 薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。 薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比 薄膜晶体管的半导体层（109）的表面。

公开(公告)号：US20110198608A1

公开(公告)日：2011-08-18

申请号：US13125776

申请日：2009-10-22

申请人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

发明人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

IPC分类号： H01L31/0368 ,  H01L29/786 ,  H01L21/20 ,  H01L29/04 ,  H01L31/14 ,  B82Y99/00

CPC分类号： H01L29/66757 ,  G02F1/1368 ,  G02F2001/13312 ,  H01L27/0629 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/14612 ,  H01L29/78633 ,  H01L29/861

摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.

摘要翻译： 半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。 薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。 薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比 薄膜晶体管的半导体层（109）的表面。

公开(公告)号：US20100181575A1

公开(公告)日：2010-07-22

申请号：US12667465

申请日：2008-06-05

申请人： Naoki Makita ,  Masato Hashimoto

发明人： Naoki Makita ,  Masato Hashimoto

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618

摘要： A semiconductor device includes at least one thin-film transistor 116, which includes: a crystalline semiconductor layer 120 including a region 110 to be a channel region and source and drain regions 113; a gate electrode 107 for controlling the conductivity of the region 110 to be a channel region; a gate insulating film 106 arranged between the semiconductor layer 120 and the gate electrode 107; and source and drain electrodes 115 connected to the source and drain regions 113, respectively. At least one of the source and drain regions 113 contains an element to be a donor or an acceptor and a rare-gas element, but the region 110 to be a channel region does not contain the rare-gas element. The atomic weight of the rare-gas element is greater than that of the element to be a donor or an acceptor. The concentration of the rare-gas element in the at least one region as measured in the thickness direction thereof decreases continuously from the upper surface of the at least one region toward its lower surface.

摘要翻译： 半导体器件包括至少一个薄膜晶体管116，其包括：晶体半导体层120，其包括作为沟道区的区域110以及源极和漏极区113; 用于将区域110的导电性控制为沟道区的栅电极107; 布置在半导体层120和栅电极107之间的栅极绝缘膜106; 以及分别连接到源区113和漏区113的源电极115和漏电极115。 源极区域113和漏极区域113中的至少一个包含作为供体或受体的元素和稀有气体元素，但是作为沟道区域的区域110不含有稀有气体元素。 稀有气体元素的原子量大于作为供体或受体的元素的原子量。 在其厚度方向上测量的至少一个区域中的稀有气体元素的浓度从至少一个区域的上表面向其下表面连续地减小。