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    Semiconductor device
    1.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20050116265A1

    公开(公告)日：2005-06-02

    申请号：US10950828

    申请日：2004-09-27

    申请人： Naoto Inoue ,  Hitomi Sakurai ,  Min Paek ,  Sang Kim ,  In Kim

    发明人： Naoto Inoue ,  Hitomi Sakurai ,  Min Paek ,  Sang Kim ,  In Kim

    IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L29/76

    CPC分类号： H01L27/0921 ,  H01L21/76237 ,  H01L21/823814 ,  H01L21/823878

    摘要： In a semiconductor device in which high voltage MOS transistors and low voltage MOS transistors are mixedly mounted, a process is simplified and miniaturization thereof is achieved, without causing a parasitic transistor operation. An active region doped with a low impurity concentration of an impurity is formed in a channel region of a parasitic MOS transistor between two STI (shallow trench isolation) regions, and current flow between a source and a drain of the parasitic MOS transistor is cut off in a semiconductor device in which a high voltage MOS transistor and a microscopic low voltage MOS transistor are mixedly mounted on the same semiconductor substrate.

    摘要翻译： 在混合安装高压MOS晶体管和低压MOS晶体管的半导体器件中，简化了工艺并实现了其小型化，而不会引起寄生晶体管的操作。 在两个STI（浅沟槽隔离）区域之间的寄生MOS晶体管的沟道区域中形成掺杂有杂质浓度低的有源区，并且将寄生MOS晶体管的源极与漏极之间的电流切断 在其中将高电压MOS晶体管和微观低电压MOS晶体管混合安装在同一半导体衬底上的半导体器件中。

    Semiconductor device with dual gate oxides
    3.
    发明申请
    Semiconductor device with dual gate oxides 失效
    具有双栅极氧化物的半导体器件

    公开(公告)号：US20050059215A1

    公开(公告)日：2005-03-17

    申请号：US10973852

    申请日：2004-10-25

    申请人： Inki Kim ,  Sang Kim ,  Min Paek ,  Chiew Ping ,  Wan Lee ,  Choong Chien ,  Zadig Lam ,  Hitomi Watanabe ,  Naoto Inoue

    发明人： Inki Kim ,  Sang Kim ,  Min Paek ,  Chiew Ping ,  Wan Lee ,  Choong Chien ,  Zadig Lam ,  Hitomi Watanabe ,  Naoto Inoue

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/823462 ,  H01L21/823481 ,  Y10S438/981

    摘要： A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact. Thereafter, a first gate oxide having a first thickness is formed on the first active region, the first gate oxide having a first edge facing the first isolation structure and a second edge facing the second isolation structure. The first edge is separated from the first isolation structure by a first distance. The second edge is separated from the second isolation structure by a second distance. Thereafter, a second gate oxide having a second thickness is formed on the second active region, the second thickness being different than the first thickness.

    摘要翻译： 制造具有第一有源区和第二有源区的半导体器件的方法包括提供在衬底上限定第一有源区的第一和第二隔离结构。 第一有源区域使用第一工作电压，而第二有源区域使用不同于第一电压的第二工作电压。 形成覆盖第一和第二有源区的氮化物层。 形成覆盖氮化物层的氧化物层。 去除覆盖在第一有源区上的氧化物层的第一部分以露出氮化物层的第一部分。 使用湿蚀刻方法去除氮化物层的暴露的第一部分，同时留下覆盖第二有源区域的氮化物层的第二部分完好无损。 此后，在第一有源区上形成具有第一厚度的第一栅极氧化物，第一栅极氧化物具有面对第一隔离结构的第一边缘和面向第二隔离结构的第二边缘。 第一边缘与第一隔离结构隔开第一距离。 第二边缘与第二隔离结构隔开第二距离。 此后，在第二有源区上形成具有第二厚度的第二栅极氧化物，第二厚度不同于第一厚度。

    Semiconductor device having multiple gate oxide layers and method of manufacturing thereof
    4.
    发明申请
    Semiconductor device having multiple gate oxide layers and method of manufacturing thereof 失效
    具有多个栅极氧化物层的半导体器件及其制造方法

    公开(公告)号：US20050287745A1

    公开(公告)日：2005-12-29

    申请号：US11126944

    申请日：2005-05-10

    申请人： Inki Kim ,  Sang Kim ,  Min Paek ,  Ong Teong ,  Oh Young ,  Ng Leng ,  Joung Ho

    发明人： Inki Kim ,  Sang Kim ,  Min Paek ,  Ong Teong ,  Oh Young ,  Ng Leng ,  Joung Ho

    IPC分类号： H01L21/8234 ,  H01L21/336

    CPC分类号： H01L21/823462 ,  Y10S438/981

    摘要： A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage levels, respectively, that are different from each other. A nitride layer overlying the first, second, and third voltage regions are formed. An oxide layer overlying the nitride layer is formed. The oxide layer is patterned to expose a portion of the nitride layer overlying the first voltage region. The exposed portion of the nitride layer is removed using a wet etch process. A first gate oxide layer overlying the first voltage region is formed. Portions of the oxide layer and the nitride layer overlying the second and third voltage regions are removed. Impurities are selectively implanted into the third voltage region while preventing the impurities from being provided in the second voltage region. A second gate oxide overlying the second voltage region and a third gate oxide overlying the third voltage region are formed simultaneously. The second gate oxide is thicker than the third gate oxide.

    摘要翻译： 制造半导体器件的方法包括在衬底上限定第一电压区域，第二电压区域和第三电压区域。 第一，第二和第三电压区域被配置为分别处理彼此不同的第一，第二和第三电压电平。 形成覆盖第一，第二和第三电压区域的氮化物层。 形成覆盖氮化物层的氧化物层。 图案化氧化物层以暴露覆盖第一电压区域的氮化物层的一部分。 使用湿蚀刻工艺去除氮化物层的暴露部分。 形成覆盖第一电压区域的第一栅极氧化物层。 除去覆盖第二和第三电压区域的氧化物层和氮化物层的部分。 杂质被选择性地注入到第三电压区域中，同时防止在第二电压区域中提供杂质。 覆盖第二电压区域的第二栅极氧化物和覆盖第三电压区域的第三栅极氧化物同时形成。 第二栅极氧化物比第三栅极氧化物厚。

    Apparatus for focusing particle beam using radiation pressure
    5.
    发明申请
    Apparatus for focusing particle beam using radiation pressure 失效
    使用辐射压力聚焦粒子束的装置

    公开(公告)号：US20060011872A1

    公开(公告)日：2006-01-19

    申请号：US10976095

    申请日：2004-10-27

    申请人： Sang Kim ,  Hyung Park ,  Sang Kim

    发明人： Sang Kim ,  Hyung Park ,  Sang Kim

    IPC分类号： G01V8/00 ,  G01N21/86

    CPC分类号： H01J27/024

    摘要： The present invention relates to an apparatus for focusing particle beams using a radiation pressure capable of obtaining the same flow amount and a narrower particle beam width with respect to the particle size and a higher numeral density. It is possible to form the particle beams by applying the radiation pressure to the particles with respect to the flow condition that cannot form the particle beams with respect to the set particle sizes. There is provided an apparatus for focusing particle beams using a radiation pressure, comprising an orifice part that is provided at a predetermined portion of the flow tube, and a lens having a hole with a predetermined diameter for thereby focusing the particle flow into a particle beam and applying a radiation pressure to the flow particles; and a light source supply part (A) provided at a portion opposite to the discharge outlet of the mixing tube.

    摘要翻译： 本发明涉及一种使用能够获得相对于粒径和较高数字密度获得相同流量和较窄粒子束宽度的辐射压力来聚焦粒子束的装置。 相对于不能相对于设定粒径形成粒子束的流动条件，向粒子施加辐射压力可以形成粒子束。 提供了一种用于使用辐射压力聚焦粒子束的装置，包括设置在流量管的预定部分处的孔部分和具有预定直径的孔的透镜，从而将颗粒流聚焦成粒子束 并向所述流动颗粒施加辐射压力; 以及设置在与混合管的排出口相对的部分处的光源供应部分（A）。

    GOLF TRAINING APPARATUS AND METHOD
    6.
    发明申请
    GOLF TRAINING APPARATUS AND METHOD 审中-公开
    高尔夫培训设备和方法

    公开(公告)号：US20130210538A1

    公开(公告)日：2013-08-15

    申请号：US13724333

    申请日：2012-12-21

    申请人： Sang Kim ,  David Stowers

    发明人： Sang Kim ,  David Stowers

    IPC分类号： A63B69/36

    CPC分类号： A63B69/3655 ,  A63B37/00 ,  A63B37/14 ,  A63B43/002 ,  A63B69/3688

    摘要： Disclosed in certain embodiments is a golf training aid comprising a spheroid segment comprising a dimpled outer circumferential surface, a first base surface, and a second base surface.

    摘要翻译： 在某些实施例中公开的是一种高尔夫球训练辅助装置，其包括一个包括凹陷的外圆周表面，第一基面和第二基面的球体段。

    GOLF TRAINING APPARATUS AND METHOD
    7.
    发明申请
    GOLF TRAINING APPARATUS AND METHOD 有权
    高尔夫培训设备和方法

    公开(公告)号：US20130157773A1

    公开(公告)日：2013-06-20

    申请号：US13768345

    申请日：2013-02-15

    申请人： Sang Kim

    发明人： Sang Kim

    IPC分类号： A63B69/36

    CPC分类号： A63B69/3688 ,  A63B37/00 ,  A63B37/14 ,  A63B43/002 ,  A63B2071/0694

    摘要： Disclosed in certain embodiments is a golf training aid comprising a spheroid segment comprising a dimpled outer circumferential surface, a first substantially flat base surface, and a second substantially flat base surface, wherein the first substantially flat base surface and the second substantially flat base surface are substantially parallel to each other and are substantially equal in size.

    摘要翻译： 在某些实施例中公开的是一种高尔夫球训练辅助装置，其包括一个包括凹陷的外圆周表面，第一基本平坦的基面和第二基本平坦的基面的球体段，其中第一基本平坦的基面和第二基本平坦的基面是 基本上彼此平行并且尺寸基本上相等。

    INBRED C57BL/6 ES CELLS WITH HIGH DEVELOPMENTAL CAPACITY
    8.
    发明申请
    INBRED C57BL/6 ES CELLS WITH HIGH DEVELOPMENTAL CAPACITY 审中-公开
    具有高发展能力的INBRED C57BL / 6 ES细胞

    公开(公告)号：US20130074200A2

    公开(公告)日：2013-03-21

    申请号：US13011799

    申请日：2011-01-21

    申请人： Sang Kim

    发明人： Sang Kim

    IPC分类号： A01K67/027 ,  C12N5/10 ,  C12N5/07

    CPC分类号： C12N5/0606

    摘要： Described herein are inbred B6 ES cell lines that exhibit high developmental capacities and have a number of advantages over ES cell lines already available. First, they can be used for gene targeting and have a high percentage of germline transmission when injected into diploid host blastocysts (˜50-80%). Second, these ES cell lines can successfully be used to generate live pups by tetraploid blastocyst complementation, producing a high percentage (15-20%) of mice that are entirely inbred B6 ES cell derived. Third, these ES cells lines can be used to rapidly generate mice that are homozygous for a gene of interest. These advantages indicate that the inbred B6 ES cells provided here facilitate the rapid generation of inbred B6 mouse models in a cost-effective and efficient manner.

    摘要翻译： 本文描述的是具有高发育能力并且已经具有优于已经可获得的ES细胞系的许多优点的近交B6ES细胞系。 首先，它们可以用于基因靶向，并且当注射到二倍体宿主胚泡（〜50-80％）时具有高百分比的种系传播。 第二，这些ES细胞系可以成功地用于通过四倍体囊胚互补产生活的幼崽，产生高百分比（15-20％）完全近交B6ES细胞来源的小鼠。 第三，这些ES细胞系可用于快速产生对于感兴趣的基因是纯合的小鼠。 这些优点表明，这里提供的近交B6 ES细胞有助于以成本效益高效的方式快速生成近交B6小鼠模型。