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    Apparatus for focusing particle beam using radiation pressure
    1.
    发明申请
    Apparatus for focusing particle beam using radiation pressure 失效
    使用辐射压力聚焦粒子束的装置

    公开(公告)号：US20060011872A1

    公开(公告)日：2006-01-19

    申请号：US10976095

    申请日：2004-10-27

    申请人： Sang Kim ,  Hyung Park ,  Sang Kim

    发明人： Sang Kim ,  Hyung Park ,  Sang Kim

    IPC分类号： G01V8/00 ,  G01N21/86

    CPC分类号： H01J27/024

    摘要： The present invention relates to an apparatus for focusing particle beams using a radiation pressure capable of obtaining the same flow amount and a narrower particle beam width with respect to the particle size and a higher numeral density. It is possible to form the particle beams by applying the radiation pressure to the particles with respect to the flow condition that cannot form the particle beams with respect to the set particle sizes. There is provided an apparatus for focusing particle beams using a radiation pressure, comprising an orifice part that is provided at a predetermined portion of the flow tube, and a lens having a hole with a predetermined diameter for thereby focusing the particle flow into a particle beam and applying a radiation pressure to the flow particles; and a light source supply part (A) provided at a portion opposite to the discharge outlet of the mixing tube.

    摘要翻译： 本发明涉及一种使用能够获得相对于粒径和较高数字密度获得相同流量和较窄粒子束宽度的辐射压力来聚焦粒子束的装置。 相对于不能相对于设定粒径形成粒子束的流动条件，向粒子施加辐射压力可以形成粒子束。 提供了一种用于使用辐射压力聚焦粒子束的装置，包括设置在流量管的预定部分处的孔部分和具有预定直径的孔的透镜，从而将颗粒流聚焦成粒子束 并向所述流动颗粒施加辐射压力; 以及设置在与混合管的排出口相对的部分处的光源供应部分（A）。

    System and method for grid MPI job allocation using file-based MPI initialization in grid computing system
    2.
    发明申请
    System and method for grid MPI job allocation using file-based MPI initialization in grid computing system 有权
    在网格计算系统中使用基于文件的MPI初始化的网格MPI作业分配的系统和方法

    公开(公告)号：US20050198104A1

    公开(公告)日：2005-09-08

    申请号：US11044557

    申请日：2005-01-27

    申请人： Oh Kwon ,  Jae Hahm ,  Sang Kim ,  Jong Lee ,  Hyung Park ,  Kyung Park ,  Shin Kim ,  Kwang Koh

    发明人： Oh Kwon ,  Jae Hahm ,  Sang Kim ,  Jong Lee ,  Hyung Park ,  Kyung Park ,  Shin Kim ,  Kwang Koh

    IPC分类号： G06F15/163 ,  G06F15/16

    CPC分类号： G06F9/5072

    摘要： Disclosed is a file-based grid MPI job allocation system for a middleware-based grid computing system in which computers having a plurality of resources including an MPI program are distributed and connected to each other through a network, wherein the grid MPI job allocation system differentiates functions of a middleware and the MPI program, thereby achieving MPI initialization without intervention of a separate arbitration process. The job submission service module generates a file containing an address, a port number, etc. of each node, which are necessary for the MPI initialization, and sends the file to the job execution service module of the corresponding node. Each job execution service module executes the MPI job, and the MPI program waits for the generation of the file and then performs initialization by using the information in the file. The present invention clearly differentiates the jobs to be done by the MPI program and by the job submission service module in the middleware, thereby enabling the MPI program to be executed in the grid computing system regardless of the design of the middleware.

    摘要翻译： 公开了一种用于基于中间件的网格计算系统的基于文件的网格MPI作业分配系统，其中包括MPI程序的多个资源的计算机通过网络分布并彼此连接，其中网格MPI作业分配系统区分 中间件和MPI程序的功能，从而实现MPI初始化，而不需要单独的仲裁过程。 作业提交服务模块生成包含MPI初始化所需的每个节点的地址，端口号等的文件，并将该文件发送到相应节点的作业执行服务模块。 每个作业执行服务模块执行MPI作业，并且MPI程序等待文件的生成，然后使用文件中的信息执行初始化。 本发明明确区分由MPI程序和作业提交服务模块在中间件中完成的作业，从而使得能够在网格计算系统中执行MPI程序，而不管中间件的设计如何。

    Slurry composition with high planarity and CMP process of dielectric film using the same
    4.
    发明申请
    Slurry composition with high planarity and CMP process of dielectric film using the same 失效
    具有高平坦度的浆料组合物和使用其的介电膜的CMP工艺

    公开(公告)号：US20050148186A1

    公开(公告)日：2005-07-07

    申请号：US10999263

    申请日：2004-11-30

    申请人： Jong Jung ,  Sang Lee ,  Hyung Park

    发明人： Jong Jung ,  Sang Lee ,  Hyung Park

    IPC分类号： H01L21/304 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/76819 ,  C09G1/02 ,  H01L21/31053

    摘要： Disclosed herein are a CMP slurry composition with high-planarity and a CMP process for polishing a dielectric film using the same. More specifically, a CMP slurry composition with high-planarity includes a carbon compound having tens of thousands of carboxyl groups and having a molecular weight ranging from hundreds of thousands to millions, an abrasive, and water. A CMP process for polishing a dielectric film utilizes the disclosed slurry composition. The slurry composition enables complete and overall planarization of the dielectric film by polishing the part of the film having a higher step difference through CMP process. Accordingly, the disclosed slurry composition is useful for the CMP process of all semiconductor devices including those having ultrafine patterns.

    摘要翻译： 本文公开了具有高平面性的CMP浆料组合物和使用其的用于抛光电介质膜的CMP工艺。 更具体地说，具有高平面度的CMP浆料组合物包括具有数万个羧基并且分子量范围从数十万到数百万的碳化合物，研磨剂和水。 用于抛光电介质膜的CMP工艺利用所公开的浆料组合物。 浆料组合物通过CMP工艺研磨具有较高阶梯差的薄膜的部分，能够使电介质薄膜完全和全面平坦化。 因此，所公开的浆料组合物对于包括具有超细图案的半导体器件的所有半导体器件的CMP工艺是有用的。

    Method for forming polysilicon plug of semiconductor device
    5.
    发明申请
    Method for forming polysilicon plug of semiconductor device 有权
    用于形成半导体器件的多晶硅插塞的方法

    公开(公告)号：US20050142867A1

    公开(公告)日：2005-06-30

    申请号：US10879220

    申请日：2004-06-30

    申请人： Hyung Park ,  Min Lee ,  Sang Lee ,  Hyun Sohn

    发明人： Hyung Park ,  Min Lee ,  Sang Lee ,  Hyun Sohn

    IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768

    CPC分类号： H01L21/76897 ,  H01L21/7684

    摘要： Disclosed is a method for forming a polysilicon plug of a semiconductor device. The method comprises the steps of: forming a stacked pattern of a wordline and a hard mask film on a semiconductor substrate comprising a cell region and a peripheral circuit region; forming a spacer on a sidewall of the stacked pattern; forming an interlayer insulating film on the semiconductor substrate; polishing the interlayer insulating film via a CMP process using the hard mask film as a polishing barrier film; forming a barrier film on the semiconductor substrate including the interlayer insulating film; selectively etching the barrier film and the interlayer insulating film to form a landing plug contact hole; depositing a polysilicon film filling the landing plug contact hole on the semiconductor substrate; blanket-etching the polysilicon film using the barrier film as an etching barrier film; and polishing the polysilicon film and the barrier film using the hard mask film as a polishing barrier film to form a polysilicon plug.

    摘要翻译： 公开了一种用于形成半导体器件的多晶硅插塞的方法。 该方法包括以下步骤：在包括单元区域和外围电路区域的半导体衬底上形成字线和硬掩模膜的堆叠图案; 在所述堆叠图案的侧壁上形成间隔物; 在半导体衬底上形成层间绝缘膜; 通过使用硬掩模膜作为抛光阻挡膜的CMP工艺来研磨层间绝缘膜; 在包括层间绝缘膜的半导体衬底上形成阻挡膜; 选择性地蚀刻阻挡膜和层间绝缘膜以形成着陆塞接触孔; 在所述半导体衬底上沉积填充所述着地插头接触孔的多晶硅膜; 使用阻挡膜作为蚀刻阻挡膜对多晶硅膜进行绝缘蚀刻; 并使用硬掩模膜作为抛光阻挡膜研磨多晶硅膜和阻挡膜以形成多晶硅插塞。

    Method of manufacturing semiconductor device
    6.
    发明申请
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US20050095834A1

    公开(公告)日：2005-05-05

    申请号：US10875052

    申请日：2004-06-22

    申请人： Sang Lee ,  Jong Shin ,  Hyung Park

    发明人： Sang Lee ,  Jong Shin ,  Hyung Park

    IPC分类号： H01L21/283 ,  H01L21/304 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242

    CPC分类号： H01L21/76897 ,  H01L21/7684 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10888

    摘要： Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming gates on a substrate, forming junction areas on a surface of the substrate, forming a first BPSG layer on a resultant structure of the substrate, performing a first CVD process for the first BPSG layer, forming a second BPSG layer on the first BPSG layer, forming a landing plug contact, depositing a polysilicon layer on a resultant structure of the substrate, and performing a second CMP process for the polysilicon layer, the second BPSG layer and the nitride hard mask. The CMP processes are carried by using acid slurry having a high polishing selectivity with respect to the nitride layer, so a step difference between the cell region and the peripheral region is removed, thereby simplifying the semiconductor manufacturing process and removing a dishing phenomenon.

    摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：在衬底上形成栅极，在衬底的表面上形成接合区域，在衬底的所得结构上形成第一BPSG层，对第一BPSG层执行第一CVD工艺，形成第二BPSG 在第一BPSG层上形成着色插头接触，在所得衬底的所得结构上沉积多晶硅层，以及对多晶硅层，第二BPSG层和氮化物硬掩模执行第二CMP工艺。 通过使用相对于氮化物层具有高抛光选择性的酸性浆料来进行CMP处理，从而消除了单元区域和外围区域之间的阶跃差异，从而简化了半导体制造工艺并消除了凹陷现象。

    Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines
    7.
    发明申请
    Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines 失效
    使用纳米板的纳米机械部件，其制造方法和制造纳米机械的方法

    公开(公告)号：US20080006888A1

    公开(公告)日：2008-01-10

    申请号：US11263476

    申请日：2005-10-31

    申请人： Yong Yun ,  Chil Ah ,  Dong Ha ,  Hyung Park ,  Wan Yun ,  Kwang-Cheol Lee ,  Gwang Park

    发明人： Yong Yun ,  Chil Ah ,  Dong Ha ,  Hyung Park ,  Wan Yun ,  Kwang-Cheol Lee ,  Gwang Park

    IPC分类号： H01L21/00

    CPC分类号： B81C99/0095 ,  B81B2201/035 ,  B81C2201/0143 ,  Y10S977/883 ,  Y10S977/888

    摘要： Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.

    摘要翻译： 本文公开了使用纳米板制造纳米组分的方法，包括以下步骤：使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束（FIB）或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜，以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。 与其它常规方法相比，本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。 此外，本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。

    Nitride-based semiconductor light emitting diode
    8.
    发明申请
    Nitride-based semiconductor light emitting diode 审中-公开
    氮化物半导体发光二极管

    公开(公告)号：US20070284593A1

    公开(公告)日：2007-12-13

    申请号：US11798677

    申请日：2007-05-16

    申请人： Kun Ko ,  Bang Oh ,  Seok Hwang ,  Je Kim ,  Hyung Park ,  Dong Kim

    发明人： Kun Ko ,  Bang Oh ,  Seok Hwang ,  Je Kim ,  Hyung Park ,  Dong Kim

    IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

    CPC分类号： H01L33/38 ,  H01L33/20

    摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer, the p-electrode having a p-type branch electrode; a p-type ESD pad formed at the end of the p-type branch electrode, the p-type ESD pad having a larger width than the end of the p-type branch electrode; an n-electrode formed on the n-type nitride semiconductor layer, on which the active layer is not formed, the n-electrode having an n-type branch electrode; and an n-type ESD pad formed at the end of the n-type branch electrode, the n-type ESD pad having a larger width than the end of the n-type branch electrode.

    摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p电极，p电极具有p型分支电极; 形成在p型分支电极的端部的p型ESD焊盘，p型ESD焊盘的宽度大于p型分支电极的端部; 形成在其上没有形成有源层的n型氮化物半导体层上的n电极，具有n型分支电极的n电极; 以及形成在n型分支电极的端部的n型ESD焊盘，该n型ESD焊盘的宽度大于n型分支电极的端部。

    Nitride based semiconductor light emitting diode
    9.
    发明申请
    Nitride based semiconductor light emitting diode 有权
    氮化物半导体发光二极管

    公开(公告)号：US20070085095A1

    公开(公告)日：2007-04-19

    申请号：US11543231

    申请日：2006-10-05

    申请人： Kun Ko ,  Seok Hwang ,  Hyung Park

    发明人： Kun Ko ,  Seok Hwang ,  Hyung Park

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/05552

    摘要： A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. the n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

    摘要翻译： 提供了一种基于氮化物的半导体LED。 在氮化物系半导体LED中，在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分成具有手指结构的第一区域和第二区域，使得第一区域和第二区域彼此啮合。 在n型氮化物半导体层的第二区域上形成有源层。 在有源层上形成p型氮化物半导体层，在p型氮化物半导体层上形成反射电极。 在反射电极上形成p电极，在n型氮化物半导体层的第一区域上形成n电极。 在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。