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    Magnetic fixture
    2.
    发明授权
    Magnetic fixture 有权
    磁性夹具

    公开(公告)号：US09061400B1

    公开(公告)日：2015-06-23

    申请号：US13423355

    申请日：2012-03-19

    申请人： Xiangyang Dai ,  Robert Miller ,  Gregory A. Voss

    发明人： Xiangyang Dai ,  Robert Miller ,  Gregory A. Voss

    IPC分类号： B25B11/00 ,  B23Q3/154 ,  H01F7/02

    CPC分类号： B25B11/002 ,  B23Q3/1543 ,  B23Q3/1546 ,  H01F7/0252

    摘要： A fixture in which an attractive magnetic force is utilized to join two parts of a container or housing together is discussed. The fixture comprises a fixture body portion, a fixture base portion and a removable fixture plate portion. At least one body magnet resides within the fixture body portion and at least one plate magnet resides within the removable fixture plate. The fixture body and plate magnets are positioned such that when they are brought together, an attractive magnetic force pulls the plate towards the fixture body. Therefore, when the respective housing portions are positioned within the fixture, the magnetic force compresses the housing portions together.

    摘要翻译： 讨论了利用有吸引力的磁力来将容器或壳体的两部分连接在一起的固定装置。 所述固定装置包括固定件主体部分，固定基座部分和可拆卸固定板部分。 至少一个主体磁体位于固定装置主体部分内，并且至少一个板状磁体位于可拆卸固定板内。 夹具本体和板状磁体定位成使得当它们被聚集在一起时，有吸引力的磁力将板拉向夹具本体。 因此，当各个壳体部分位于夹具内时，磁力将壳体部分压缩在一起。

    Semiconductor devices having improved gate height uniformity and methods for fabricating same
    3.
    发明授权
    Semiconductor devices having improved gate height uniformity and methods for fabricating same 有权
    具有改善的栅极高度均匀性的半导体器件及其制造方法

    公开(公告)号：US08936979B2

    公开(公告)日：2015-01-20

    申请号：US13493865

    申请日：2012-06-11

    申请人： Ruilong Xie ,  Xiuyu Cai ,  Andy C. Wei ,  Robert Miller

    发明人： Ruilong Xie ,  Xiuyu Cai ,  Andy C. Wei ,  Robert Miller

    IPC分类号： H01L21/00

    CPC分类号： H01L29/6653 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78

    摘要： Semiconductor devices and methods for fabricating semiconductor devices are provided. In an embodiment, a method for fabricating a semiconductor device includes forming on a semiconductor surface a temporary gate structure including a polysilicon gate and a cap. A spacer is formed around the temporary gate structure. The cap and a portion of the spacer are removed. A uniform liner is deposited overlying the polysilicon gate. The method removes a portion of the uniform liner overlying the polysilicon gate and the polysilicon gate to form a gate trench. Then, a replacement metal gate is formed in the gate trench.

    摘要翻译： 提供了用于制造半导体器件的半导体器件和方法。 在一个实施例中，制造半导体器件的方法包括在半导体表面上形成包括多晶硅栅极和帽的临时栅极结构。 在临时栅极结构周围形成间隔物。 盖子和间隔件的一部分被去除。 均匀的衬垫沉积在多晶硅栅极上。 该方法去除覆盖多晶硅栅极和多晶硅栅极的均匀衬底的一部分以形成栅极沟槽。 然后，在栅极沟槽中形成替换金属栅极。

    Method and system for detecting an airborne trigger
    5.
    发明授权
    Method and system for detecting an airborne trigger 有权
    用于检测机载触发的方法和系统

    公开(公告)号：US08786432B2

    公开(公告)日：2014-07-22

    申请号：US13307591

    申请日：2011-11-30

    申请人： Robert Miller

    发明人： Robert Miller

    IPC分类号： G08B21/00

    CPC分类号： G01N15/10 ,  G01N5/02 ,  G01N15/06 ,  G01N29/12 ,  G01N29/44 ,  G01N2291/02408 ,  G05B15/02 ,  G05D19/02 ,  G08B21/12

    摘要： An apparatus includes a cantilevered element including a coating material having an affinity for at least one compound. The apparatus further includes a first capacitive plate and a second capacitive plate that are each spaced from and capacitively coupled to the cantilevered element. The first capacitive plate is configured to induce a vibration in the cantilevered element at a frequency related to a mass of the cantilevered element. A frequency detector is coupled to the second capacitive plate to detect a change in vibrational frequency of the cantilevered element as a result of at least one particle of the at least one compound coupling to the coating material.

    摘要翻译： 一种装置包括悬臂元件，其包括对至少一种化合物具有亲和性的涂层材料。 该装置还包括第一电容板和第二电容板，它们与悬臂元件间隔开并与电容耦合。 第一电容板被配置为以与悬臂元件的质量相关的频率诱发悬臂元件中的振动。 频率检测器耦合到第二电容板，以检测悬臂元件的振动频率的变化，这是至少一种耦合到涂层材料的化合物的至少一个颗粒的结果。

    Apparatus and method for integrating a transmitting device and a battery pack
    6.
    发明授权
    Apparatus and method for integrating a transmitting device and a battery pack 有权
    用于集成发送装置和电池组的装置和方法

    公开(公告)号：US08618915B2

    公开(公告)日：2013-12-31

    申请号：US12646172

    申请日：2009-12-23

    申请人： Robert Miller ,  Spencer White

    发明人： Robert Miller ,  Spencer White

    IPC分类号： H04Q5/22

    CPC分类号： H04M1/7253 ,  H04M1/0262 ,  H04M2250/04

    摘要： An apparatus is provided that includes a processor mounted on a battery pack and a communication pathway from the processor to an electronic device comprising power battery contacts. The apparatus also includes an antenna mounted on the battery pack and coupled to the processor and adapted to transmit and receive data. A method is provided that includes installing an integrated chip including a processor and an antenna on a battery pack. The method also includes coupling the integrated chip and an electronic device when the battery pack is installed in the electronic device using power battery contacts. A high frequency signal superimposed on a direct current carried through the power battery contacts operates to send data between the processor and the electronic device.

    摘要翻译： 提供了一种装置，其包括安装在电池组上的处理器和从处理器到包括动力电池触点的电子设备的通信路径。 该装置还包括安装在电池组上并耦合到处理器并适于发送和接收数据的天线。 提供了一种方法，其包括在电池组上安装包括处理器和天线的集成芯片。 当使用动力电池触点将电池组安装在电子设备中时，该方法还包括将集成芯片和电子设备耦合。 叠加在通过动力电池触点承载的直流电的高频信号操作以在处理器和电子设备之间发送数据。

    SEMICONDUCTOR DEVICES HAVING IMPROVED GATE HEIGHT UNIFORMITY AND METHODS FOR FABRICATING SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICES HAVING IMPROVED GATE HEIGHT UNIFORMITY AND METHODS FOR FABRICATING SAME 有权
    具有改进的门高度均匀性的半导体器件及其制造方法

    公开(公告)号：US20130328112A1

    公开(公告)日：2013-12-12

    申请号：US13493865

    申请日：2012-06-11

    申请人： Ruilong Xie ,  Xiuyu Cai ,  Andy C. Wei ,  Robert Miller

    发明人： Ruilong Xie ,  Xiuyu Cai ,  Andy C. Wei ,  Robert Miller

    IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L21/8238

    CPC分类号： H01L29/6653 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78

    摘要： Semiconductor devices and methods for fabricating semiconductor devices are provided. In an embodiment, a method for fabricating a semiconductor device includes forming on a semiconductor surface a temporary gate structure including a polysilicon gate and a cap. A spacer is formed around the temporary gate structure. The cap and a portion of the spacer are removed. A uniform liner is deposited overlying the polysilicon gate. The method removes a portion of the uniform liner overlying the polysilicon gate and the polysilicon gate to form a gate trench. Then, a replacement metal gate is formed in the gate trench.

    摘要翻译： 提供了用于制造半导体器件的半导体器件和方法。 在一个实施例中，制造半导体器件的方法包括在半导体表面上形成包括多晶硅栅极和帽的临时栅极结构。 在临时栅极结构周围形成间隔物。 盖子和间隔件的一部分被去除。 均匀的衬垫沉积在多晶硅栅极上。 该方法去除覆盖多晶硅栅极和多晶硅栅极的均匀衬底的一部分以形成栅极沟槽。 然后，在栅极沟槽中形成替换金属栅极。

    Method and apparatus for providing a pass to access multimedia services in a limited geographical area
    9.
    发明授权
    Method and apparatus for providing a pass to access multimedia services in a limited geographical area 有权
    用于提供在有限地理区域中访问多媒体服务的通行证的方法和装置

    公开(公告)号：US08401550B1

    公开(公告)日：2013-03-19

    申请号：US11756978

    申请日：2007-06-01

    申请人： Robert Miller ,  Constance J. Coty ,  John F. Murray

    发明人： Robert Miller ,  Constance J. Coty ,  John F. Murray

    IPC分类号： H04W4/00

    CPC分类号： G06Q10/02 ,  H04W4/021 ,  H04W12/06

    摘要： Disclosed are systems, methods and computer-readable media for providing a pass to access multimedia services in a limited geographical area serviced by a fiber-fed, star-topology network (FFSTN). The method comprises receiving pre-registration information from a user to authorize one or more computing devices to obtain access to the fiber-fed, star-topology network covering a limited geographical area for a limited time, presenting the user with a plurality of customizable services each associated with capabilities of the respective one or more computing devices to access the FFSTN, and upon authorization, granting access to requested customized services for each of the one or more computing devices. Mechanisms are provided for handing off one or more devices as they travel from a first FFSTN to a second FFSTN.

    摘要翻译： 公开了用于提供在由光纤馈送的星形拓扑网络（FFSTN）服务的有限地理区域中访问多媒体服务的通过的系统，方法和计算机可读介质。 该方法包括从用户接收预注册信息以授权一个或多个计算设备在有限时间内获得覆盖有限地理区域的光纤馈送星形拓扑网络的访问，向用户呈现多个可定制服务 每个与相应的一个或多个计算设备的能力相关联以访问FFSTN，并且在授权之后，授予对所述一个或多个计算设备中的每一个的所请求的定制服务的访问。 提供了用于在一个或多个设备从第一FFSTN移动到第二FFSTN时移交一个或多个设备的机制。

    Methods of controlling fin height of FinFET devices by performing a directional deposition process
    10.
    发明授权
    Methods of controlling fin height of FinFET devices by performing a directional deposition process 有权
    通过执行定向沉积工艺控制FinFET器件鳍片高度的方法

    公开(公告)号：US08354320B1

    公开(公告)日：2013-01-15

    申请号：US13369482

    申请日：2012-02-09

    申请人： Ruilong Xie ,  Robert Miller

    发明人： Ruilong Xie ,  Robert Miller

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66795

    摘要： One illustrative method disclosed herein includes a forming plurality of trenches in a substrate to thereby define a fin structure for a FinFET device, forming a first region of a first insulating material within each of the trenches, wherein the as-deposited surface of the first insulating material is positioned below an upper surface of the fin, forming a layer of a second material that contacts the as-deposited surface of the first region of the first insulating material and overfills the trenches, performing at least one process operation to remove at least a portion of the layer of the second material from above the fin structure, and, after performing the at least one process operation, performing a second process operation to selectively remove the second material from above the first region of the first insulating material and thereby expose the as-deposited surface of the first region of the first insulating material.

    摘要翻译： 本文公开的一种示例性方法包括在衬底中形成多个沟槽，从而限定用于FinFET器件的鳍结构，在每个沟槽内形成第一绝缘材料的第一区域，其中第一绝缘体的沉积表面 材料位于翅片的上表面下方，形成与第一绝缘材料的第一区域的沉积表面接触的第二材料层，并且过度填充沟槽，执行至少一个工艺操作以移除至少一个 所述第二材料的所述层的所述部分从所述鳍结构的上方开始，并且在执行所述至少一个处理操作之后，执行第二处理操作以从所述第一绝缘材料的所述第一区域上方选择性地去除所述第二材料， 作为第一绝缘材料的第一区域的沉积表面。