公开(公告)号：US20120217635A9

公开(公告)日：2012-08-30

申请号：US13245181

申请日：2011-09-26

申请人： Nazir Ahmad ,  Young-Do Kwon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

发明人： Nazir Ahmad ,  Young-Do Kwon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/92125 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method of making a semiconductor device includes providing a substrate and forming a conductive layer on the substrate. The conductive layer includes a first metal. A semiconductor die is provided. A bump is formed on the semiconductor die. The bump includes a second metal. The semiconductor die is positioned proximate to the substrate to contact the bump to the conductive layer and form a bonding interface. The bump and the conductive layer are metallurgically reacted at a melting point of the first metal to dissolve a portion of the second metal from an end of the bump. The bonding interface is heated to the melting point of the first metal for a time sufficient to melt a portion of the first metal from the conductive layer. A width of the conductive layer is no greater than a width of the bump.

摘要翻译： 制造半导体器件的方法包括提供衬底并在衬底上形成导电层。 导电层包括第一金属。 提供半导体管芯。 在半导体管芯上形成凸块。 凸块包括第二金属。 半导体管芯靠近衬底定位，以将凸点接触到导电层并形成接合界面。 凸块和导电层在第一金属的熔点处被冶金反应以从凸块的端部溶解第二金属的一部分。 将接合界面加热到第一金属的熔点足以从导电层熔化第一金属的一部分的时间。 导电层的宽度不大于凸块的宽度。

公开(公告)号：US20120013005A1

公开(公告)日：2012-01-19

申请号：US13245181

申请日：2011-09-26

申请人： Nazir Ahmad ,  Young-Do Kwon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

发明人： Nazir Ahmad ,  Young-Do Kwon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/10135 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81139 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/92125 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method of making a semiconductor device includes providing a substrate and forming a conductive layer on the substrate. The conductive layer includes a first metal. A semiconductor die is provided. A bump is formed on the semiconductor die. The bump includes a second metal. The semiconductor die is positioned proximate to the substrate to contact the bump to the conductive layer and form a bonding interface. The bump and the conductive layer are metallurgically reacted at a melting point of the first metal to dissolve a portion of the second metal from an end of the bump. The bonding interface is heated to the melting point of the first metal for a time sufficient to melt a portion of the first metal from the conductive layer. A width of the conductive layer is no greater than a width of the bump.

公开(公告)号：US20130113093A9

公开(公告)日：2013-05-09

申请号：US13268048

申请日：2011-10-07

申请人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

发明人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/92125 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points.

摘要翻译： 用于形成金属互连和倒装芯片与衬底的聚合物粘附的方法包括提供具有在其凸起侧上形成的一组凸块的芯片和在其上的金属化层上具有一组互连点的衬底，提供测量量 在突起侧的芯片的中间区域中的聚合物粘合剂，使芯片与衬底对准，使得该组凸块与该组互连点对准，将芯片和衬底朝向彼此挤压，使得一部分 聚合物粘合剂接触基板，并且凸点接触互连点，并且将凸块加热到足够高的温度以在凸块和互连点之间形成冶金连接。

公开(公告)号：US20120049357A1

公开(公告)日：2012-03-01

申请号：US13268048

申请日：2011-10-07

申请人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

发明人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/92125 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points.

摘要翻译： 用于形成金属互连和倒装芯片与衬底的聚合物粘附的方法包括提供具有在其凸起侧上形成的一组凸块的芯片和在其上的金属化层上具有一组互连点的衬底，提供测量量 在突起侧的芯片的中间区域中的聚合物粘合剂，使芯片与衬底对准，使得该组凸块与该组互连点对准，将芯片和衬底朝向彼此挤压，使得一部分 聚合物粘合剂接触基板，并且凸点接触互连点，并且将凸块加热到足够高的温度以在凸块和互连点之间形成冶金连接。

公开(公告)号：US20090227072A1

公开(公告)日：2009-09-10

申请号：US12472083

申请日：2009-05-26

申请人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

发明人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

IPC分类号： H01L23/29 ,  B23K31/00 ,  B23K37/00

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/92125 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points. Also, a flip chip package is made by the method. In some embodiments the metallurgical connection includes an alloy of gold and tin at the interface between the bumps and the interconnect points.

摘要翻译： 用于形成金属互连和倒装芯片与衬底的聚合物粘附的方法包括提供具有形成在其凸起侧上的一组凸块的芯片和在其上的金属化处具有一组互连点的衬底，提供测量量 在突起侧的芯片的中间区域中的聚合物粘合剂，使芯片与衬底对准，使得该组凸块与该组互连点对准，将芯片和衬底朝向彼此挤压，使得一部分 聚合物粘合剂接触基板，并且凸点接触互连点，并且将凸块加热到足够高的温度以在凸块和互连点之间形成冶金连接。 此外，通过该方法制造倒装芯片封装。 在一些实施例中，冶金连接包括在凸块和互连点之间的界面处的金和锡的合金。

公开(公告)号：US09312150B2

公开(公告)日：2016-04-12

申请号：US13268048

申请日：2011-10-07

申请人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

发明人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

IPC分类号： H01L21/56 ,  H01L23/00

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/92125 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points.

摘要翻译： 用于形成金属互连和倒装芯片与衬底的聚合物粘附的方法包括提供具有在其凸起侧上形成的一组凸块的芯片和在其上的金属化层上具有一组互连点的衬底，提供测量量 在突起侧的芯片的中间区域中的聚合物粘合剂，使芯片与衬底对准，使得该组凸块与该组互连点对准，将芯片和衬底朝向彼此挤压，使得一部分 聚合物粘合剂接触基板，并且凸点接触互连点，并且将凸块加热到足够高的温度以在凸块和互连点之间形成冶金连接。

公开(公告)号：US08119450B2

公开(公告)日：2012-02-21

申请号：US12472083

申请日：2009-05-26

申请人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

发明人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra D. Pendse

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/92125 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points. Also, a flip chip package is made by the method. The metallurgical connection includes an alloy of gold and tin at the interface between the bumps and the interconnect points.

摘要翻译： 用于形成金属互连和倒装芯片与衬底的聚合物粘附的方法包括提供具有在其凸起侧上形成的一组凸块的芯片和在其上的金属化层上具有一组互连点的衬底，提供测量量 在突起侧的芯片的中间区域中的聚合物粘合剂，使芯片与衬底对准，使得该组凸块与该组互连点对准，将芯片和衬底朝向彼此挤压，使得一部分 聚合物粘合剂接触基板，并且凸点接触互连点，并且将凸块加热到足够高的温度以在凸块和互连点之间形成冶金连接。 此外，通过该方法制造倒装芯片封装。 冶金连接包括在凸块和互连点之间的界面处的金和锡的合金。

公开(公告)号：US07407877B2

公开(公告)日：2008-08-05

申请号：US11145247

申请日：2005-06-03

申请人： Young-Do Kweon ,  Rajendra D. Pendse ,  Nazir Ahmad ,  Kyung-Moon Kim

发明人： Young-Do Kweon ,  Rajendra D. Pendse ,  Nazir Ahmad ,  Kyung-Moon Kim

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/48 ,  H01L23/52 ,  H01L23/48 ,  H01L23/485 ,  H01L23/498

CPC分类号： H01L24/12 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/1134 ,  H01L2224/11831 ,  H01L2224/1184 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05552 ,  H01L2924/00

摘要： A stud bump structure for electrical interconnection between a pair of members includes a base portion, and a stem portion. The base portion is affixed to a pad or trace in one of the pair of members to be interconnected (such as an integrated circuit chip), and the stem end is configured to contact a metal pad on the other member (such as a printed circuit board) to complete the interconnect. According to the invention, the stem end is truncated to form a transverse plane, and the stem is more compliant than the base. Also, a method for forming a stud bump on a contact surface, includes forming a bump base portion on the surface, drawing out a generally conical tail from a top of the base, and truncating the tail to form a stem portion having a planar transverse top surface and having a length from the top of the base portion to the top surface. In some embodiments the tail portion, at least, of the stud bump is formed using a wire bonding tool. Also, a method for forming an interconnect between a first member and a second member of an electronic package includes providing one of the members with the stud bumps of the invention and then bringing the corresponding bumps and pads together in a bonding process, the compliance of the stems portions of the bumps accommodating the variance from coplanarity of the pad surfaces.

摘要翻译： 用于一对构件之间的电互连的柱形凸块结构包括基部和杆部。 基座部分固定在要互连的一对构件之一（例如集成电路芯片）中的垫或轨迹中，并且杆端构造成接触另一构件上的金属垫（例如印刷电路 板）完成互连。 根据本发明，杆端被截断以形成横向平面，并且杆比基座更顺从。 此外，在接触表面上形成柱形凸块的方法包括在表面上形成凸起基部，从基部的顶部抽出大致圆锥形的尾部，并且使尾部截断以形成具有平面横向 并且具有从基部的顶部到顶表面的长度。 在一些实施例中，至少螺柱凸块的尾部部分使用引线接合工具形成。 此外，用于在电子封装的第一部件和第二部件之间形成互连的方法包括：使部件中的一个部件具有本发明的螺柱凸块，然后在相互粘接过程中将相应的凸块和焊盘接合在一起， 凸块的杆部分容纳与焊盘表面的共面性的差异。

公开(公告)号：US07211901B2

公开(公告)日：2007-05-01

申请号：US11145246

申请日：2005-06-03

申请人： Young-Do Kweon ,  Rajendra D. Pendse ,  Nazir Ahmad ,  Kyung-Moon Kim

发明人： Young-Do Kweon ,  Rajendra D. Pendse ,  Nazir Ahmad ,  Kyung-Moon Kim

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/40 ,  H01L23/485 ,  H01L23/498

CPC分类号： H01L24/12 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/1134 ,  H01L2224/11831 ,  H01L2224/1184 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05552 ,  H01L2924/00

摘要： A stud bump structure for electrical interconnection between a pair of members includes a base portion, and a stem portion. The base portion is affixed to a pad or trace in one of the pair of members to be interconnected (such as an integrated circuit chip), and the stem end is configured to contact a metal pad on the other member (such as a printed circuit board) to complete the interconnect. According to the invention, the stem end is truncated to form a transverse plane, and the stem is more compliant than the base. Also, a method for forming a stud bump on a contact surface, includes forming a bump base portion on the surface, drawing out a generally conical tail from a top of the base, and truncating the tail to form a stem portion having a planar transverse top surface and having a length from the top of the base portion to the top surface. In some embodiments the tail portion, at least, of the stud bump is formed using a wire bonding tool. Also, a method for forming an interconnect between a first member and a second member of an electronic package includes providing one of the members with the stud bumps of the invention and then bringing the corresponding bumps and pads together in a bonding process, the compliance of the stems portions of the bumps accommodating the variance from coplanarity of the pad surfaces.

摘要翻译： 用于一对构件之间的电互连的柱形凸块结构包括基部和杆部。 基座部分固定在要互连的一对构件之一（例如集成电路芯片）中的垫或轨迹中，并且杆端构造成接触另一构件上的金属垫（例如印刷电路 板）完成互连。 根据本发明，杆端被截断以形成横向平面，并且杆比基座更顺从。 此外，在接触表面上形成柱形凸块的方法包括在表面上形成凸起基部，从基部的顶部抽出大致圆锥形的尾部，并且使尾部截断以形成具有平面横向 并且具有从基部的顶部到顶表面的长度。 在一些实施例中，至少螺柱凸块的尾部部分使用引线接合工具形成。 此外，用于在电子封装的第一部件和第二部件之间形成互连的方法包括：使部件中的一个部件具有本发明的螺柱凸块，然后在相互粘接过程中将相应的凸块和焊盘接合在一起， 凸块的杆部分容纳与焊盘表面的共面性的差异。

公开(公告)号：US20060255474A1

公开(公告)日：2006-11-16

申请号：US11444894

申请日：2006-06-01

申请人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra Pendse

发明人： Nazir Ahmad ,  Young-Do Kweon ,  Samuel Tam ,  Kyung-Moon Kim ,  Rajendra Pendse

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/10135 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81139 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/92125 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points. Also, a flip chip package is made by the method. In some embodiments the metallurgical connection includes an alloy of gold and tin at the interface between the bumps and the interconnect points.