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    Transistor with a channel comprising germanium
    5.
    发明授权
    Transistor with a channel comprising germanium 有权
    具有包含锗的通道的晶体管

    公开(公告)号：US07892927B2

    公开(公告)日：2011-02-22

    申请号：US11725160

    申请日：2007-03-16

    申请人： Stephane Monfray ,  Thomas Skotnicki ,  Didier Dutartre ,  Alexandre Talbot

    发明人： Stephane Monfray ,  Thomas Skotnicki ,  Didier Dutartre ,  Alexandre Talbot

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78684 ,  H01L29/66628 ,  H01L29/66772

    摘要： A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.

    摘要翻译： 包括富含锗的通道的晶体管。 通过从所述中间层的下表面开始的硅 - 锗中间层中包含的硅的氧化产生富锗的通道。 因此锗原子迁移到硅 - 锗中间层的上表面，并被栅极绝缘层阻挡。 因此，在氧化步骤期间原子的迁移对晶体管的性能的影响较小，因为晶体管的栅极绝缘体已经被制造并且在该步骤期间不被修改。 锗原子向固定的栅极绝缘体的迁移导致通道和绝缘体之间的表面缺陷的限制。

    Transistor with a channel comprising germanium
    6.
    发明申请
    Transistor with a channel comprising germanium 有权
    具有包含锗的通道的晶体管

    公开(公告)号：US20080020532A1

    公开(公告)日：2008-01-24

    申请号：US11725160

    申请日：2007-03-16

    申请人： Stephane Monfray ,  Thomas Skotnicki ,  Didier Dutartre ,  Alexandre Talbot

    发明人： Stephane Monfray ,  Thomas Skotnicki ,  Didier Dutartre ,  Alexandre Talbot

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78684 ,  H01L29/66628 ,  H01L29/66772

    摘要： A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.

    摘要翻译： 包括富含锗的通道的晶体管。 通过从所述中间层的下表面开始的硅 - 锗中间层中包含的硅的氧化产生富锗的通道。 因此锗原子迁移到硅 - 锗中间层的上表面，并被栅极绝缘层阻挡。 因此，在氧化步骤期间原子的迁移对晶体管的性能的影响较小，因为晶体管的栅极绝缘体已经被制造并且在该步骤期间不被修改。 锗原子向固定的栅极绝缘体的迁移导致通道和绝缘体之间的表面缺陷的限制。

    Forming of a single-crystal semiconductor layer portion separated from a substrate
    8.
    发明申请
    Forming of a single-crystal semiconductor layer portion separated from a substrate 有权
    从衬底分离的单晶半导体层部分的形成

    公开(公告)号：US20070190754A1

    公开(公告)日：2007-08-16

    申请号：US11704638

    申请日：2007-02-09

    申请人： Didier Dutartre ,  Nicolas Loubet ,  Alexandre Talbot

    发明人： Didier Dutartre ,  Nicolas Loubet ,  Alexandre Talbot

    IPC分类号： H01L21/20

    CPC分类号： H01L29/66772 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02639

    摘要： A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.

    摘要翻译： 一种用于在中空区域上方形成单晶半导体层部分的方法，包括通过牺牲单晶半导体层和单晶半导体层在活性单晶半导体区域上的选择性外延生长，以及去除牺牲层。 在有源区域被凸起的绝缘层围绕的同时进行外延生长，并且通过由至少部分去除凸起的绝缘层获得的访问来执行牺牲单晶半导体层的去除。

    Forming of a single-crystal semiconductor layer portion separated from a substrate
    10.
    发明授权
    Forming of a single-crystal semiconductor layer portion separated from a substrate 有权
    从衬底分离的单晶半导体层部分的形成

    公开(公告)号：US07622368B2

    公开(公告)日：2009-11-24

    申请号：US11704638

    申请日：2007-02-09

    申请人： Didier Dutartre ,  Nicolas Loubet ,  Alexandre Talbot

    发明人： Didier Dutartre ,  Nicolas Loubet ,  Alexandre Talbot

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L29/66772 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02639

    摘要： A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.

    摘要翻译： 一种用于在中空区域上方形成单晶半导体层部分的方法，包括通过牺牲单晶半导体层和单晶半导体层在活性单晶半导体区域上的选择性外延生长，以及去除牺牲层。 在有源区域被凸起的绝缘层围绕的同时进行外延生长，并且通过由至少部分去除凸起的绝缘层获得的访问来执行牺牲单晶半导体层的去除。