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公开(公告)号：US07632706B2
公开(公告)日：2009-12-15
申请号：US11256558
申请日：2005-10-21
申请人： Nicolay F. Yudanov , Igor Sokolik , Richard P. Kingsborough , William G. Leonard , Suzette K. Pangrle , Nicholas H. Tripsas , Minh Van Ngo
发明人： Nicolay F. Yudanov , Igor Sokolik , Richard P. Kingsborough , William G. Leonard , Suzette K. Pangrle , Nicholas H. Tripsas , Minh Van Ngo
IPC分类号： H01L51/40
CPC分类号： H01L51/001 , C23C16/54 , H01J2237/3321 , H01L27/285
摘要： A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.
摘要翻译： 公开了一种用于处理有机存储单元的系统和方法。 示例性系统可以采用封闭的处理室，可操作以在第一电极上形成钝化层的无源层形成部件和可操作地在被动层上形成有机半导体层的有机半导体层形成部件。 晶片衬底不需要从钝化层形成系统转移到有机半导体层形成系统。 钝化层在形成无源层之后并且在形成有机半导体层之前不暴露于空气。 结果，在薄膜层中不会发生由暴露于空气引起的导电杂质，从而提高了有机存储器件的生产率，质量和可靠性。 该系统可以进一步采用可在有机半导体层上形成第二电极的第二电极形成部件。
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公开(公告)号：US07777218B1
公开(公告)日：2010-08-17
申请号：US11462525
申请日：2006-08-04
CPC分类号： H01L51/0043 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/71 , H01L27/285 , H01L51/0041
摘要： An organic memory cell containing an organic semiconductor layer containing a copolymer is disclosed. The copolymer contains a diarylacetylene portion and at least one of an arylacetylene portion and a heterocyclic acetylene portion. The copolymer may be a random copolymer, an alternating copolymer, a random block copolymer, or a block copolymer. Methods of making an organic memory devices/cells containing the copolymer, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.
摘要翻译： 公开了含有共聚物的有机半导体层的有机存储单元。 共聚物含有二芳基乙炔部分和芳基乙炔部分和杂环乙炔部分中的至少一个。 共聚物可以是无规共聚物，交替共聚物，无规嵌段共聚物或嵌段共聚物。 还公开了制备含共聚物的有机存储器件/电池的方法，使用有机存储器件/电池的方法，以及诸如包含有机存储器件/电池的计算机的器件。
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公开(公告)号：US07105374B1
公开(公告)日：2006-09-12
申请号：US11033941
申请日：2005-01-12
IPC分类号： H01L21/00
CPC分类号： H01L51/0043 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/71 , H01L27/285 , H01L51/0041
摘要： An organic memory cell containing an organic semiconductor layer containing a copolymer is disclosed. The copolymer contains a diarylacetylene portion and at least one of an arylacetylene portion and a heterocyclic acetylene portion. The copolymer may be a random copolymer, an alternating copolymer, a random block copolymer, or a block copolymer. Methods of making an organic memory devices/cells containing the copolymer, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.
摘要翻译： 公开了含有共聚物的有机半导体层的有机存储单元。 共聚物含有二芳基乙炔部分和芳基乙炔部分和杂环乙炔部分中的至少一个。 共聚物可以是无规共聚物，交替共聚物，无规嵌段共聚物或嵌段共聚物。 还公开了制备含共聚物的有机存储器件/电池的方法，使用有机存储器件/电池的方法，以及诸如包含有机存储器件/电池的计算机的器件。
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公开(公告)号：US07776682B1
公开(公告)日：2010-08-17
申请号：US11110165
申请日：2005-04-20
申请人： Alexander Nickel , Suzette K. Pangrle , Steven C. Avanzino , Jeffrey Shields , Fei Wang , Minh Tran , Juri H. Krieger , Igor Sokolik
发明人： Alexander Nickel , Suzette K. Pangrle , Steven C. Avanzino , Jeffrey Shields , Fei Wang , Minh Tran , Juri H. Krieger , Igor Sokolik
IPC分类号： H01L21/8242
CPC分类号： H01L45/1233 , H01L27/2472 , H01L45/085 , H01L45/1246 , H01L45/1266 , H01L45/14 , H01L45/141 , H01L45/142 , H01L45/146 , H01L45/149 , H01L45/1616
摘要： Disclosed are methods and systems for improving cell-to-cell repeatability of electrical performance in memory cells. The methods involve forming an electrically non-conducting material having ordered porosity over a passive layer. The ordered porosity can facilitate formation of conductive channels through which charge carriers can migrate across the otherwise non-conductive layer to facilitate changing a state of a memory cell. A barrier layer can optionally be formed over the non-conductive layer, and can have ordered porosity oriented in a manner substantially perpendicular to the conductive channels such that charge carries migrating across the non-conductive layer cannot permeate the barrier layer. The methods provide for the manufacture of microelectronic devices with cost-effective and electrically reliable memory cells.
摘要翻译： 公开了用于改善记忆单元中电性能的细胞间细胞重复性的方法和系统。 所述方法包括在无源层上形成具有有序孔隙率的非导电材料。 有序孔隙度可以促进导电通道的形成，电荷载体可以穿过导电通道迁移穿过另外的非导电层以便于改变存储器单元的状态。 可以可选地在非导电层上形成阻挡层，并且可以以基本上垂直于导电沟道的方式定向排序的孔隙，使得穿过非导电层迁移的电荷不能渗透到阻挡层。 该方法提供了具有成本效益和电可靠性的存储单元的微电子器件的制造。
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5.发明授权Protection of active layers of memory cells during processing of other elements 有权在处理其他元件期间保护存储器单元的有源层公开(公告)号：US07220642B2
公开(公告)日：2007-05-22
申请号：US10987262
申请日：2004-11-12
IPC分类号： H01L21/336
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/16
摘要： A method of fabricating an electronic structure by providing a conductive layer, providing a dielectric layer over the conductive layer, providing first and second openings through the dielectric layer, providing first and second conductive bodies in the first and second openings respectively and in contact with the conductive layer, providing a memory structure over the first conductive body, providing a protective element over the memory structure, and undertaking processing on the second conductive body.
摘要翻译： 一种通过提供导电层制造电子结构的方法，在导电层上提供电介质层，提供通过介电层的第一和第二开口，分别在第一和第二开口中提供第一和第二导电体，并与 在第一导电体上提供存储结构，在存储器结构上提供保护元件，并对第二导电体进行处理。
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公开(公告)号：US07307338B1
公开(公告)日：2007-12-11
申请号：US10899344
申请日：2004-07-26
IPC分类号： H01L23/58
CPC分类号： H01L25/16 , H01L25/0657 , H01L27/285 , H01L51/0575 , H01L51/0591 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Systems and methodologies are provided for forming three dimensional memory structures that are fabricated from blocks of individual polymer memory cells stacked on top of each other. Such a polymer memory structure can be formed on top of control component circuitries employed for programming a plurality of memory cells that form the stacked three dimensional structure. Such an arrangement provides for an efficient placement of polymer memory cell on a wafer surface, and increases amount of die space available for circuit design.
摘要翻译： 提供了用于形成三维存储器结构的系统和方法，所述三维存储器结构由堆叠在彼此顶部的单个聚合物存储器单元的块制造。 这种聚合物存储器结构可以形成在用于编程形成堆叠三维结构的多个存储单元的控制元件电路之上。 这种布置提供聚合物存储器单元在晶片表面上的有效放置，并且增加可用于电路设计的管芯空间的量。
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公开(公告)号：US07012276B2
公开(公告)日：2006-03-14
申请号：US10244591
申请日：2002-09-17
IPC分类号： H01L51/20
CPC分类号： H01L51/0579 , H01L51/0053 , H01L51/0078 , H01L51/0583
摘要： A thin film Zener diode, comprising: (a) a thin film comprised of at least one layer including at least one organic material; and (b) first and second electrodes in contact with respective opposite sides of the thin film, wherein the materials of the first and second electrodes and the thickness of the thin film are selected to provide a pre-selected Zener threshhold voltage.
摘要翻译： 一种薄膜齐纳二极管，包括：（a）由至少一层包括至少一种有机材料构成的薄膜; 和（b）与薄膜的相应相对侧接触的第一和第二电极，其中选择第一和第二电极的材料和薄膜的厚度以提供预选的齐纳阈值电压。
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8.发明授权Semiconductor memory device comprising one or more injecting bilayer electrodes 有权包括一个或多个注入双层电极的半导体存储器件公开(公告)号：US07582893B2
公开(公告)日：2009-09-01
申请号：US11227603
申请日：2005-09-15
IPC分类号： H01L29/08
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , H01L27/285
摘要： The subject invention provides systems and methods that facilitate formation of semiconductor memory devices comprising memory cells with one or more injecting bilayer electrodes. Memory arrays generally comprise bit cells that have two discrete components; a memory element and a selection element, such as, for example, a diode. The invention increases the efficiency of a memory device by forming memory cells with selection diodes comprising a bilayer electrode. Memory cells are provided comprising bilayer cathodes and/or bilayer anodes that facilitate a significant improvement in charge injection into the diode layers of memory cells. The increased charge (e.g. electrons or holes) density in the diode layers of the selected memory cells results in improved memory cell switching times and lowers the voltage required for the memory cell to operate, thereby, creating a more efficient memory cell.
摘要翻译： 本发明提供了便于形成包括具有一个或多个注入双层电极的存储器单元的半导体存储器件的系统和方法。 存储器阵列通常包括具有两个分立组件的位单元; 存储元件和选择元件，例如二极管。 本发明通过形成具有包括双层电极的选择二极管的存储单元来提高存储器件的效率。 提供包含双层阴极和/或双层阳极的存储器单元，其有助于电荷注入到存储器单元的二极管层中的显着改进。 所选择的存储器单元的二极管层中的增加的电荷（例如电子或空穴）密度导致改善的存储单元切换时间并降低存储器单元操作所需的电压，从而创建更有效的存储单元。
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公开(公告)号：US07344913B1
公开(公告)日：2008-03-18
申请号：US11099847
申请日：2005-04-06
IPC分类号： H01L51/40
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L51/0035 , H01L51/0038 , H01L51/0046 , H01L51/0048 , H01L51/0077 , H01L51/0591
摘要： A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active layer and passive layer. The active layer is formed using spin on techniques and contains an organic semiconductor doped with a metal salt.
摘要翻译： 公开了一种由在两个电极之间具有可控导电介质的两个电极制成的有机存储单元的方法。 可控导电介质包含有源层和无源层。 有源层使用旋转技术形成并且包含掺杂有金属盐的有机半导体。
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公开(公告)号：US20110189812A1
公开(公告)日：2011-08-04
申请号：US13082879
申请日：2011-04-08
申请人： Christoph Brabec , Robert D. Eckert , Robert L. Graves, JR. , Jens Hauch , Karl Pichler , Igor Sokolik , Lian Wang
发明人： Christoph Brabec , Robert D. Eckert , Robert L. Graves, JR. , Jens Hauch , Karl Pichler , Igor Sokolik , Lian Wang
IPC分类号： H01L31/18
CPC分类号： H01L27/301 , H01L31/046 , H01L51/0036 , H01L51/4253 , H01L51/441 , H01L51/442 , Y02E10/549 , Y02P70/521
摘要： Methods of preparing photovoltaic modules, as well as related components, systems, and devices, are disclosed.
摘要翻译： 公开了制备光伏模块的方法，以及相关组件，系统和设备。
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