摘要:
Techniques are disclosed for enhancing the speed at which pixel levels are read out and sampled for processing. A method of processing pixel levels includes clamping a pixel readout line to a voltage level less than a voltage corresponding to a signal sensed by an n-MOS pixel. Subsequently, the pixel readout line is coupled to an output of an n-MOS source-follower and the pixel signal is read out onto the pixel readout line through the n-MOS source-follower. The pixel signal that was read out is passed through a p-MOS source-follower to a processing circuit. Before passing the pixel signal through the p-MOS source-follower to the processing circuit, a capacitive storage node in the processing circuit is clamped to a voltage greater than a signal at an input to the p-MOS source-follower. Subsequently, an output of the p-MOS source-follower is coupled to the processing circuit, and a signal corresponding to the pixel signal is stored by the processing circuit. Similar techniques are provided for reading out and sampling p-MOS pixels.
摘要:
Techniques are disclosed for enhancing the speed at which pixel levels are read out and sampled for processing. A method of processing pixel levels includes clamping a pixel readout line to a voltage level less than a voltage corresponding to a signal sensed by an n-MOS pixel. Subsequently, the pixel readout line is coupled to an output of an n-MOS source-follower and the pixel signal is read out onto the pixel readout line through the n-MOS source-follower. The pixel signal that was read out is passed through a p-MOS source-follower to a processing circuit. Before passing the pixel signal through the p-MOS source-follower to the processing circuit, a capacitive storage node in the processing circuit is clamped to a voltage greater than a signal at an input to the p-MOS source-follower. Subsequently, an output of the p-MOS source-follower is coupled to the processing circuit, and a signal corresponding to the pixel signal is stored by the processing circuit. Similar techniques are provided for reading out and sampling p-MOS pixels.
摘要:
A CMOS imager includes an array of active pixel sensors, wherein each pixel is associated with a respective column in the array. The imager also includes multiple circuits for reading out values of pixels from the active sensor array. Each readout circuit can be associated with a respective pair of columns in the array and can include first and second sample-and-hold circuits. The first and second sample-and-hold circuits are associated, respectively, with first and second columns of pixels in the array. Each readout circuit also includes an operational amplifier-based charge sensing circuit that selectively provides an amplified differential output signal based on signals sampled either by the first sample-and-hold circuit or the second sample-and-hold circuit. The readout circuit also has an analog-to-digital converter for converting the differential output to a corresponding digital signal using a successive approximation technique. Use of the readout circuit can increase the parallel structure of the overall chip, thereby reducing the bandwidth which each readout circuit must be capable of handling.
摘要:
A CMOS imager includes an array of active pixel sensors, wherein each pixel is associated with a respective column in the array. The imager also includes multiple circuits for reading out values of pixels from the active sensor array. Each readout circuit can be associated with a respective pair of columns in the array and can include first and second sample-and-hold circuits. The first and second sample-and-hold circuits are associated, respectively, with first and second columns of pixels in the array. Each readout circuit also includes an operational amplifier-based charge sensing circuit that selectively provides an amplified differential output signal based on signals sampled either by the first sample-and-hold circuit or the second sample-and-hold circuit. The readout circuit also has an analog-to-digital converter for converting the differential output to a corresponding digital signal using a successive approximation technique. Use of the readout circuit can increase the parallel structure of the overall chip, thereby reducing the bandwidth which each readout circuit must be capable of handling.
摘要:
An image sensor with an electronic neutral density filter. Each pixel of the image sensor is capable of being electronically adjusted such that the total charge integration is effectively changed by an amount of the adjustment. The adjustment uses a variable capacitor, here are paper wrapped are formed by an MOS transistor. The capacitor may be within each pixel, or may be shared between multiple pixels.
摘要:
Image sensor with CMOS output, an another circuit receiving input. The circuit operates like a transmission line, in current mode, with substantially zero voltage. The impedances are matched by setting bias currents.
摘要:
Techniques are disclosed for enhancing the speed at which pixel levels are read out and sampled for processing. A method of processing pixel levels includes clamping a pixel readout line to a voltage level less than a voltage corresponding to a signal sensed by an n-MOS pixel. Subsequently, the pixel readout line is coupled to an output of an n-MOS source-follower and the pixel signal is read out onto the pixel readout line through the n-MOS source-follower. The pixel signal that was read out is passed through a p-MOS source-follower to a processing circuit. Before passing the pixel signal through the p-MOS source-follower to the processing circuit, a capacitive storage node in the processing circuit is clamped to a voltage greater than a signal at an input to the p-MOS source-follower. Subsequently, an output of the p-MOS source-follower is coupled to the processing circuit, and a signal corresponding to the pixel signal is stored by the processing circuit. Similar techniques are provided for reading out and sampling p-MOS pixels.
摘要:
A bidirectional source follower system includes an N channel transistor and P channel transistor which conduct in opposite ways. The n channel transistor is connected to quickly source current, however is relatively inefficient at sinking current. In contrast, the P channel transistor can sink current very quickly but is bad at source current. The two devices are connected together in a way which allows advantageous features of both.
摘要:
A successive approximation A/D converter which includes a sub ranging classifier that receives an input signal and classifies said input signal according to plural different highest resolution bits, to determine a range of the input signal, and creating a set of most significant bits based on said range, said subranging classifier also setting and determining an offset based on said range, and a successive approximation A/D converted that converting lowest resolution parts of the input signal as adjusted by the offset.
摘要:
A system that has plural different photodetector circuits, each photodetector circuit including its own transfer gate, and each of the plural different photodetector circuits and transfer gates commonly connected to a first node. In amplifier is used which maintains a fixed voltage edits input. The amplifier Has a first capacitance to ground in a second capacitance as a feedback between its output and input. In one embodiment, there are 16 photodetector circuits connected to the single amplifier. In embodiments, the photodetector circuits can be located in one substrate while the amplifier is located in another substrate, and the amplifier also minimizes parasitics between the substrates.