摘要:
The disclosure provides an illumination system of a microlithographic projection exposure apparatus, as well as related methods and components. In some embodiments, the illumination system includes an optical element configured so that, when a linearly polarized entry beam which has an angle spectrum is incident on the first optical element, a maximum aperture angle of the entry beam at the first optical element is not more than 35 mrad. A component, which is rotationally symmetric about an optical axis of the system, of a birefringence present in the illumination system can be at least partially compensated by the first optical element.
摘要:
In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要:
Arranged in a system for setting and maintaining a gas atmosphere in an objective having at least one optical element is a first, inner gas compartment that is separated from a second, outer gas compartment by an inner casing. Both gas compartments are provided with gas inlet and gas outlet openings. At least one of the two gas compartments is under a pressure that is higher than the ambient pressure.
摘要:
An optical system (1) includes a first optical subsystem (3) with at least a first birefringent optical element (7), and further includes a second optical subsystem (5) with at least a second birefringent optical element (9). Between the first optical subsystem and the second optical subsystem, an optical retarding system (13) with at least a first optical retarding element (15) is arranged, which introduces a retardation of one-half of a wavelength between two mutually orthogonal states of polarization.
摘要:
In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要:
An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.
摘要:
The invention relates to a system for reducing the coherence of a wave front-emitting laser radiation, especially for a projection lens for use in semiconductor lithography, wherein a first partial beam of a laser beam incident on a surface of a resonator body is partially reflected. A second partial beam penetrates the resonator body and emerges from the resonator body at least approximately in the area of entry after a plurality of total internal reflections. The two partial beams are then passed on jointly to an illumination plane. The resonator body is adapted, in addition to splitting the laser beam into partial beams, to modulate the wave fronts of at least one partial beam during a laser pulse. The partial beams reflected on the resonator body and penetrating the resonator body are superimposed downstream of the resonator body. The resonator body is provided with a phase plate having different local phase distribution.
摘要:
A method of determining at least one parameter that is characteristic of the angular distribution of light illuminating an object in a projection exposure apparatus is described. This parameter may be, for example, a pupil asymmetry. The method comprises the step of inserting a filter element in or in close proximity of a pupil plane of an illumination system that is arranged between a light source and the object. The filter element has a filter function that varies in an azimuthal direction with respect to the optical axis of the illumination system. Then the intensity of the light in a plane downstream of the pupil plane is measured. After rotating the filter element around the optical axis by an angle Φ, the measurement of the intensity is repeated. From the filter function, the angle Φ and the measured intensities the parameter is measured.
摘要:
A projection exposure device (1), in particular for micro-lithography, serves to produce an image of an object (2) in an image plane (11) positioned in an object plane (10). For this reason the projection exposure device (1) has a radiation source (4) emitting projection radiation (5). Illumination optics (6) are positioned between the radiation source (4) and the object plane (10) and projection optics (8) are positioned between the object plane (10) and the image plane (11). A detection device (30) is provided to measure the illumination angle distribution of the projection radiation (5) in a field plane (10). This communicates via at least one control device (34, 18) with at least one manipulator (20, 45, 47). The latter serves to move at least one optical component (7, 41) within the projection ray path (5, 9). The illumination angle distribution changes as a result of the controlled movement of the optical component (7, 41). This can therefore be adjusted depending on the measurement result and for example adapted to the object structure.
摘要:
An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane. The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.