公开(公告)号：US11511267B2

公开(公告)日：2022-11-29

申请号：US17252253

申请日：2019-06-24

Applicant: NITTO DENKO CORPORATION

Inventor： Ekambaram Sambandan ,  Bin Zhang

IPC: B01J35/00 ,  B01D53/86 ,  B01J21/06 ,  B01J23/58

Abstract: Described herein are heterogeneous materials comprising a mixture of a first n-type semiconductor and a second n-type semiconductor. The first n-type semiconductor may be a single or plural phase TiO2 material. The second n-type semiconductor includes a metal titanate and/or a noble metal. Upon activation with ultraviolet light, the photocatalytic material mixtures described herein efficiently decompose volatile chemical compounds. Furthermore, the photocatalytic materials disclosed herein are observably more stable, relative to known semiconductor materials, to inactivation by deposition.

公开(公告)号：US09738543B2

公开(公告)日：2017-08-22

申请号：US14102119

申请日：2013-12-10

Applicant: NITTO DENKO CORPORATION

Inventor： Rajesh Mukherjee ,  Benjamin M. Weaver ,  Tao Gu ,  Jiadong Zhou ,  Bin Zhang

IPC: C02F1/00 ,  C02F1/30 ,  C02F1/44 ,  C02F1/72 ,  C02F1/32 ,  B01D35/30 ,  B01D35/02 ,  B01D65/02 ,  B01D65/08

CPC classification number: C02F1/002 ,  B01D35/02 ,  B01D35/30 ,  B01D65/022 ,  B01D65/08 ,  C02F1/30 ,  C02F1/32 ,  C02F1/444 ,  C02F1/725 ,  C02F2303/04 ,  C02F2305/10 ,  C02F2307/02 ,  Y02A20/214

Abstract: Described herein are devices for providing drinking fluid from feed sources comprising: a first reservoir, a filter for mechanically removing particles and a second reservoir for receipt of the processed feed fluid. A continually disinfecting element is disposed in either or both reservoirs to remove additional materials from the fluid. Drinking fluid is provided in a portable device. Optional light sources are provided to interact with the disinfecting elements and/or provide an indication of the contained suitability of such disinfecting elements. A method for creating drinking fluid from a feed source is also disclosed.

公开(公告)号：US20160355732A1

公开(公告)日：2016-12-08

申请号：US15177212

申请日：2016-06-08

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroaki Miyagawa ,  Ekambaram Sambandan ,  Bin Zhang

IPC: C09K11/77 ,  C04B35/64 ,  H01L33/50 ,  C04B35/50

CPC classification number: C09K11/7774 ,  C04B35/44 ,  C04B35/634 ,  C04B35/638 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/6025 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6586 ,  C04B2235/661 ,  C04B2235/663 ,  C04B2235/664 ,  C04B2235/764 ,  C04B2235/9646 ,  C04B2235/9653 ,  H01L33/502

Abstract: A garnet ceramic phosphor with Ce and Mn co-doping, wherein calcium and silicon in the phosphor crystal host can be minimized for enhancing performance, is described herein. Also a ceramic phosphor element comprising a garnet phosphor having composition of formula 1 or 2 is described herein: (A1-x,Cex)3(Al1-y,Mny)5-wSiwO12  (Formula 1) (Lu1-xCex)3(Al1-y,Mny)5-wSiwO12  (Formula 2).

公开(公告)号：US09499740B2

公开(公告)日：2016-11-22

申请号：US14548149

申请日：2014-11-19

Applicant: Nitto Denko Corporation

Inventor： Hiroaki Miyagawa ,  Bin Zhang

IPC: H01L33/50 ,  C09K11/77 ,  C09K11/02 ,  C04B38/06 ,  B32B18/00 ,  C04B35/44 ,  C04B35/626 ,  C04B35/634 ,  C04B35/638 ,  H01L51/52 ,  C04B111/80

CPC classification number: C09K11/7774 ,  B32B18/00 ,  C04B35/44 ,  C04B35/6261 ,  C04B35/634 ,  C04B35/638 ,  C04B38/067 ,  C04B2111/80 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/5409 ,  C04B2235/6025 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/764 ,  C04B2235/9646 ,  C04B2235/9661 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/704 ,  C09K11/02 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L51/5268 ,  H01L2933/0041 ,  H01L2933/0091 ,  C04B35/50

Abstract: Described herein are elements for light emitting devices comprising: an emissive element comprising a host material and an emissive guest material and substantially free of light scattering material; and a light scattering element comprising either a non-emissive or an emissive material, wherein the light scattering element is between about 2.5% to about 60% by volume voids and the thickness ratio of light scattering element to the emissive element is at least 1 to about 2.

Abstract translation: 这里描述的是用于发光器件的元件，其包括：发射元件，其包含主体材料和发射客体材料，并且基本上不含光散射材料; 以及包括非发射或发射材料的光散射元件，其中所述光散射元件在约2.5体积％至约60体积％之间的空隙，并且所述光散射元件与所述发光元件的厚度比至少为1至 约2。

公开(公告)号：US09376332B2

公开(公告)日：2016-06-28

申请号：US13840859

申请日：2013-03-15

Applicant: NITTO DENKO CORPORATION

Inventor： Ekambaram Sambandan ,  Bin Zhang

IPC: H01L31/00 ,  C02F1/32 ,  B01J27/24 ,  B01J21/06 ,  B01J23/02 ,  B01J23/06 ,  B01J23/14 ,  B01J23/18 ,  B01J23/22 ,  B01J23/28 ,  B01J23/30 ,  B01J23/755 ,  B01J35/00 ,  C02F101/16 ,  C02F101/30 ,  C02F101/32

CPC classification number: C02F1/32 ,  B01J21/063 ,  B01J23/02 ,  B01J23/06 ,  B01J23/14 ,  B01J23/18 ,  B01J23/22 ,  B01J23/28 ,  B01J23/30 ,  B01J23/755 ,  B01J27/24 ,  B01J35/004 ,  C02F2101/16 ,  C02F2101/308 ,  C02F2101/322 ,  C02F2303/04 ,  C02F2305/10

Abstract: Described herein are elements comprising a p-type semiconductor comprising mixed valence oxide compounds and an n-type semiconductor having a deeper valence band than the p-type semiconductor valence bands wherein the semiconductor types are in ionic communication with each other. The elements enhance photocatalytic activity.

Abstract translation: 这里描述的元件包括包含混合氧化钒化合物的p型半导体和具有比p型半导体价带更深的价带的n型半导体，其中半导体类型彼此离子连通。 元素增强光催化活性。

公开(公告)号：US09102875B2

公开(公告)日：2015-08-11

申请号：US14446175

申请日：2014-07-29

Applicant: NITTO DENKO CORPORATION

Inventor： Guang Pan ,  Hiroaki Miyagawa ,  Hironaka Fujii ,  Bin Zhang ,  Rajesh Mukherjee ,  Toshitaka Nakamura ,  Amane Mochizuki

IPC: C09K11/77 ,  H01L51/52 ,  H01L33/50 ,  B32B18/00 ,  C04B35/44 ,  C04B35/626 ,  C04B35/638

CPC classification number: C09K11/7774 ,  B32B18/00 ,  C04B35/44 ,  C04B35/6261 ,  C04B35/62665 ,  C04B35/6268 ,  C04B35/638 ,  C04B38/00 ,  C04B2111/807 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/5409 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/663 ,  C04B2235/75 ,  C04B2235/764 ,  C04B2235/9646 ,  C04B2235/9653 ,  C04B2235/9661 ,  C04B2237/343 ,  C04B2237/582 ,  C04B2237/586 ,  C04B2237/704 ,  C09K2211/182 ,  H01L33/502 ,  H01L33/505 ,  H01L51/52 ,  Y10T428/249953 ,  Y10T428/249961 ,  Y10T428/24997 ,  Y10T428/24999 ,  C04B38/0655

Abstract: Disclosed herein are emissive ceramic materials having a dopant concentration gradient along a thickness of a yttrium aluminum garnet (YAG) region. The dopant concentration gradient may include a maximum dopant concentration, a half-maximum dopant concentration, and a slope at or near the half-maximum dopant concentration. The emissive ceramics may, in some embodiments, exhibit high internal quantum efficiencies (IQE). The emissive ceramics may, in some embodiments, include porous regions. Also disclosed herein are methods of make the emissive ceramic by sintering an assembly having doped and non-doped layers.

Abstract translation: 本文公开了具有沿钇铝石榴石（YAG）区域的厚度的掺杂剂浓度梯度的发射陶瓷材料。 掺杂剂浓度梯度可以包括最大掺杂剂浓度，半最大掺杂剂浓度以及在半最大掺杂剂浓度处或附近的斜率。 在一些实施例中，发射陶瓷可表现出高的内部量子效率（IQE）。 在一些实施例中，发光陶瓷可以包括多孔区域。 本文还公开了通过烧结具有掺杂层和非掺杂层的组件来制造发光陶瓷的方法。

公开(公告)号：US20150132585A1

公开(公告)日：2015-05-14

申请号：US14394188

申请日：2013-04-18

Applicant: Nitto Denko Corporation

Inventor： Guang Pan ,  Jiadong Zhou ,  Hironaka Fujii ,  Bin Zhang ,  Amane Mochizuki

IPC: C09K11/77 ,  C09K11/61 ,  C04B35/645

CPC classification number: C09K11/7774 ,  B32B18/00 ,  C04B35/2675 ,  C04B35/44 ,  C04B35/6261 ,  C04B35/64 ,  C04B35/645 ,  C04B2235/3201 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/3293 ,  C04B2235/6025 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/666 ,  C04B2235/765 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/9646 ,  C04B2237/343 ,  C04B2237/36 ,  C09K11/57 ,  C09K11/617

Abstract: Electric sintering of precursor materials to prepare phosphor ceramics is described herein. The phosphor ceramics prepared by electric sintering may be incorporated into devices such as light-emitting devices, lasers, or for other purposes.

Abstract translation: 本文描述了用于制备荧光体陶瓷的前体材料的电烧结。 通过电烧结制备的荧光体陶瓷可以结合到诸如发光器件，激光器或用于其它目的的器件中。

公开(公告)号：US20130280520A1

公开(公告)日：2013-10-24

申请号：US13865956

申请日：2013-04-18

Applicant: NITTO DENKO CORPORATION

Inventor： Guang Pan ,  Jiadong Zhou ,  Hironaka Fujii ,  Bin Zhang ,  Amane Mochizuki

IPC: C09K11/77

CPC classification number: C09K11/7792 ,  B32B18/00 ,  C04B35/44 ,  C04B35/58 ,  C04B35/581 ,  C04B35/584 ,  C04B35/6261 ,  C04B35/62675 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/3869 ,  C04B2235/3873 ,  C04B2235/441 ,  C04B2235/6025 ,  C04B2235/6562 ,  C04B2235/663 ,  C04B2235/666 ,  C04B2235/764 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/704 ,  C09K11/7734 ,  Y10T428/259

Abstract: Electric sintering of precursor materials to prepare phosphor ceramics is described herein. The phosphor ceramics prepared by electric sintering may be incorporated into devices such as light-emitting devices, lasers, or used for other purposes.

Abstract translation: 本文描述了用于制备荧光体陶瓷的前体材料的电烧结。 通过电烧结制备的荧光体陶瓷可以结合到诸如发光器件，激光器的器件中，或用于其它目的。

公开(公告)号：US20210260569A1

公开(公告)日：2021-08-26

申请号：US17252253

申请日：2019-06-24

Applicant: NITTO DENKO CORPORATION

Inventor： Ekambaram Sambandan ,  Bin Zhang

IPC: B01J35/00 ,  B01J21/06 ,  B01D53/86 ,  B01J23/58

Abstract: Described herein are heterogeneous materials comprising a mixture of a first n-type semiconductor and a second n-type semiconductor. The first n-type semiconductor may be a single or plural phase TiO2 material. The second n-type semiconductor includes a metal titanate and/or a noble metal. Upon activation with ultraviolet light, the photocatalytic material mixtures described herein efficiently decompose volatile chemical compounds. Furthermore, the photocatalytic materials disclosed herein are observably more stable, relative to known semiconductor materials, to inactivation by deposition.

公开(公告)号：US10093856B2

公开(公告)日：2018-10-09

申请号：US15177212

申请日：2016-06-08

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroaki Miyagawa ,  Ekambaram Sambandan ,  Bin Zhang

IPC: C09K11/77 ,  C04B35/50 ,  C04B35/64 ,  C04B35/44 ,  C04B35/634 ,  C04B35/638 ,  H01L33/50

Abstract: A garnet ceramic phosphor with Ce and Mn co-doping, wherein calcium and silicon in the phosphor crystal host can be minimized for enhancing performance, is described herein. Also a ceramic phosphor element comprising a garnet phosphor having composition of formula 1 or 2 is described herein: (A1-x,Cex)3(Al1-y,Mny)5-wSiwO12  (Formula 1) (Lu1-x,Cex)3(Al1-y,Mny)5-wSiwO12  (Formula 2).