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38 条记录 (耗时 0.021 秒)

    Inner cable for push-pull control cable
    1.
    发明授权
    Inner cable for push-pull control cable 失效
    用于推拉控制电缆的内部电缆

    公开(公告)号：US06078010A

    公开(公告)日：2000-06-20

    申请号：US938936

    申请日：1997-10-02

    申请人： Nobuhiro Funahashi ,  Hiroaki Furukawa

    发明人： Nobuhiro Funahashi ,  Hiroaki Furukawa

    IPC分类号： F16C1/20 ,  H01B5/00 ,  H01B5/08

    CPC分类号： F16C1/20

    摘要： A inner cable for push-pull control cable includes a core and N pieces of strands spirally wound around the core, wherein a diameter of the core is larger than a diameter of the each of the N pieces of strands, wherein the N pieces of strands includes M piece(s) thereof wherein each diameter of M piece(s) of the N pieces of strands is larger than each diameter the remaining of (N-M) pieces of strands of the N pieces of strands, and wherein N and M are integers satisfying the following relation of 1.ltoreq.M.ltoreq.0.3N, and N.gtoreq.4.

    摘要翻译： 用于推拉控制电缆的内部电缆包括芯部和螺旋地卷绕在芯部上的N个线束，其中芯部的直径大于N个线股中的每一个的直径，其中N个股线 包括M个片段，其中N个股线的M个片段的每个直径大于N个股线的（NM）条线的剩余部分的每个直径，并且其中N和M是整数 满足1 / = 4的关系。

    Wire rope
    2.
    发明授权
    Wire rope 失效
    钢丝绳

    公开(公告)号：US6023026A

    公开(公告)日：2000-02-08

    申请号：US938935

    申请日：1997-10-02

    申请人： Nobuhiro Funahashi ,  Hiroaki Furukawa

    发明人： Nobuhiro Funahashi ,  Hiroaki Furukawa

    IPC分类号： D07B1/06 ,  H01B5/08

    CPC分类号： D07B1/0673 ,  D07B5/007 ,  D07B2201/1014 ,  D07B2201/1036

    摘要： A stranded wire rope of the present invention is composed of a plurality of wires. The stranded wire rope is subjected to swaging. A mean wire diameter ratio of the plurality of wires is at most 5%, and a wire gap ratio is in a range between 20% and 35% due to sujecting the stranded wire rope to swaging. The mean wire diameter ratio and the wire gap ratio are defined as:mean wire diameter ratio=(d/D).times.100(%)wire gap ratio=(1-(S/A)).times.100(%)whered: mean diameter of each wire,D: diameter of the wire rope before subjecting the wire rope to swaging,S: summation of sectional areas of each of the wires constituting the stranded wire rope, andA: area of circumscribed circle of the wire rope after subjecting the wire rope to swaging.

    摘要翻译： 本发明的绞合钢丝绳由多条线构成。 绞线钢丝绳经受模锻。 多股线的平均线径比为5％以下，线间隙率在20％〜35％的范围内，由于将绞合的钢丝绳插入到锻造中。 平均线径比和线间隙比定义为：平均线径比=（d / D）×100（％）线间隙比=（1-（S / A））×100（％）其中d：平均直径 每个电线的直径D：钢丝绳在锻造前的直径，S：构成绞线钢丝的各线的截面积的总和，A：钢丝绳的外接圆的面积 钢丝绳锻造。

    Polyphenylene ether-based resin composition and method for producing the same
    3.
    发明授权
    Polyphenylene ether-based resin composition and method for producing the same 有权
    聚苯醚系树脂组合物及其制造方法

    公开(公告)号：US09187640B2

    公开(公告)日：2015-11-17

    申请号：US14127775

    申请日：2012-06-20

    申请人： Hiroaki Furukawa ,  Tadayuki Ishii

    发明人： Hiroaki Furukawa ,  Tadayuki Ishii

    IPC分类号： C08L71/12 ,  C08K5/521 ,  C08L25/02 ,  C08L53/02 ,  C08L71/10 ,  C08K5/523

    CPC分类号： C08L71/10 ,  C08K5/523 ,  C08L53/02 ,  C08L71/12

    摘要： To provide a resin composition that has a high impact resistance, hardly causes peeling during molding, and is excellent in flame retardancy, heat resistance, and heat aging resistance for a long period. A resin composition containing (A) polyphenylene ether, (B) a hydrogenated block copolymer that is obtained by hydrogenating a block copolymer including a polystyrene block and a conjugated diene compound polymer block, and that has a weight average molecular weight of 100,000 to 500,000, and (C) an organic phosphorus-based flame retardant within a specified amount, wherein a value of the loss tangent (tan δ) peak height of the (B) component in a dynamic viscoelasticity spectrum obtained by measurement of the resin composition at a frequency of 10 Hz is in a specified range.

    摘要翻译： 为了提供耐冲击性高的树脂组合物，在成型时几乎不发生剥离，并且长时间地具有优异的阻燃性，耐热性和耐热老化性。 一种含有（A）聚苯醚的树脂组合物，（B）氢化嵌段共聚物，其通过氢化包含聚苯乙烯嵌段和共轭二烯化合物聚合物嵌段的嵌段共聚物而得到，重均分子量为100,000〜500,000， 和（C）规定量的有机磷系阻燃剂，其中通过以一定频率测量树脂组合物而获得的动态粘弹性谱中（B）成分的损耗角正切（tanδ）峰值的值 10 Hz在指定范围内。

    TWO-HAND SWITCH DEVICE
    4.
    发明申请
    TWO-HAND SWITCH DEVICE 有权
    两手开关装置

    公开(公告)号：US20090146506A1

    公开(公告)日：2009-06-11

    申请号：US11817306

    申请日：2006-07-12

    申请人： Tatsuya Iida ,  Manabu Shutto ,  Hiroaki Furukawa ,  Toshiki Koshi ,  Takashi Tanaka

    发明人： Tatsuya Iida ,  Manabu Shutto ,  Hiroaki Furukawa ,  Toshiki Koshi ,  Takashi Tanaka

    IPC分类号： F16P3/20 ,  G08B1/00

    CPC分类号： B30B15/285 ,  F16P3/20

    摘要： Task—To provide a two-hand switch device that requires only a small load for each operation cycle.Means to Achieve the Task—The device comprises a left hand RF antenna placed in such a position as to enable a communication with the first RFID tag worn on the pre-determined position of the left hand of the worker only when the left hand of the worker is placed in a pre-determined left hand safe position, a right hand RF antenna placed in such a position as to enable a communication with the second RFID tag worn on the pre-determined position of the right hand of the worker only when the right hand of the worker is placed in a pre-determined right hand safe position and an output signal generating means for generating an output signal according to signals received by the left hand RF antenna and the right hand RF antenna.

    摘要翻译： 任务 - 提供双手开关设备，每个操作周期只需要较小的负载。 实现任务的手段 - 该装置包括放置在如下位置的左手RF天线，即，只有当左手的左手可以与穿戴在工作人员左手的预定位置上的第一RFID标签通信时， 工人被放置在预定的左手安全位置，右手RF天线放置在使得能够与穿戴在工人的右手的预定位置上的第二RFID标签的通信只有当 工人的右手放置在预定的右手安全位置，以及输出信号发生装置，用于根据由左手RF天线和右手RF天线接收的信号产生输出信号。

    Process of making high T.sub.c Josephson junction device
    5.
    发明授权
    Process of making high T.sub.c Josephson junction device 失效
    制造高Tc约瑟夫逊结装置的工艺

    公开(公告)号：US5880069A

    公开(公告)日：1999-03-09

    申请号：US190211

    申请日：1994-02-01

    申请人： Masao Nakao ,  Hiroaki Furukawa ,  Ryohkan Yuasa ,  Shuji Fujiwara

    发明人： Masao Nakao ,  Hiroaki Furukawa ,  Ryohkan Yuasa ,  Shuji Fujiwara

    IPC分类号： C23C14/08 ,  C30B23/02 ,  H01L39/24

    CPC分类号： H01L39/2496 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S505/702

    摘要： A desired pattern is formed on a non-superconducting oxide film after the non-superconducting oxide film has been formed on a magnesia substrate. A superconducting oxide film is formed over the exposed parts of the substrate and the non-superconducting oxide film. The epitaxial orientation of the superconducting oxide film section on the non-superconducting oxide film is different from that of the superconducting oxide film section on the substrate. A tilt-boundary junction is produced at a boundary between the superconducting film sections which are different in epitaxial orientation from each other. Thus, a Josephson junction having a desired pattern can be obtained.

    摘要翻译： 在非超导氧化膜已经形成在氧化镁基板上之后，在非超导氧化物膜上形成期望的图案。 在衬底和非超导氧化物膜的暴露部分上形成超导氧化物膜。 非超导氧化物膜上的超导氧化膜部分的外延取向与衬底上的超导氧化膜部分的外延取向不同。 在外延取向不同的超导膜部之间的边界处产生倾斜边界连接。 因此，可以获得具有期望图案的约瑟夫逊结。

    Connection structure for solar power generation module
    7.
    发明授权
    Connection structure for solar power generation module 有权
    太阳能发电模块的连接结构

    公开(公告)号：US09231335B2

    公开(公告)日：2016-01-05

    申请号：US13983944

    申请日：2012-02-13

    申请人： Tadayuki Ishii ,  Hiroaki Furukawa ,  Hiroyuki Kono

    发明人： Tadayuki Ishii ,  Hiroaki Furukawa ,  Hiroyuki Kono

    IPC分类号： H01L31/048 ,  H01R13/00 ,  H01R13/527 ,  H02S40/34 ,  H01R13/627

    CPC分类号： H01R13/527 ,  C08L53/02 ,  C08L71/12 ,  H01R13/6273 ,  H02S40/34 ,  C08L53/025

    摘要： A main object of the present invention is to provide a connection structure for a solar power generation module that has much better impact resistance at low temperature and flame retardancy even when made thinner and more compact. A connection structure for a solar power generation module according to the present invention is a connection structure for a solar power generation module, which links a solar power generation module with a cable for connecting to the solar power generation module, and includes a specific thermoplastic resin composition.

    摘要翻译： 本发明的主要目的在于提供一种太阳能发电模块的连接结构，即使在更薄更紧凑的情况下也能在低温下具有更好的耐冲击性和阻燃性。 根据本发明的用于太阳能发电模块的连接结构是将太阳能发电模块与用于连接到太阳能发电模块的电缆连接的太阳能发电模块的连接结构，并且包括特定的热塑性树脂 组成。

    Thin film transistor and semiconductor layer
    8.
    发明授权
    Thin film transistor and semiconductor layer 有权
    薄膜晶体管和半导体层

    公开(公告)号：US08415673B2

    公开(公告)日：2013-04-09

    申请号：US13130141

    申请日：2009-11-02

    申请人： Hiroaki Furukawa

    发明人： Hiroaki Furukawa

    IPC分类号： H01L31/112 ,  H01L29/04

    CPC分类号： H01L27/12 ,  H01L21/0335 ,  H01L29/0657

    摘要： A semiconductor layer (100) according to the present invention includes a top surface (100o), a bottom surface (100u) and a side surface (100s). In a portion of the side surface (100s) which is in the vicinity of a border with the top surface (100o), a tangential line (T1) to the portion is inclined with respect to the normal to the bottom surface (100u). In a certain portion of the side surface (100s) which is farther from the top surface (100o) than the portion in the vicinity of the border, an angle made by a tangential line (T2) to the certain portion and a plane defined by the bottom surface (100u) is larger than an angle made by the tangential line (T1) to the portion in the vicinity of the border and the plane defined by the bottom surface (100u).

    摘要翻译： 根据本发明的半导体层（100）包括顶表面（100o），底表面（100u）和侧表面（100s）。 在与顶表面（100o）的边界附近的侧表面（100s）的一部分中，该部分的切线（T1）相对于底表面（100u）的法线倾斜。 在比顶部表面（100o）远离边界附近的侧表面（100s）的某一部分中，由切线（T2）与特定部分形成的角度和由 底表面（100u）大于由切线（T1）与边界附近的部分和由底表面（100u）限定的平面所形成的角度。

    SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20130037870A1

    公开(公告)日：2013-02-14

    申请号：US13643389

    申请日：2011-04-18

    申请人： Hiroaki Furukawa

    发明人： Hiroaki Furukawa

    IPC分类号： H01L21/20 ,  H01L29/78

    CPC分类号： H01L29/78633 ,  G02F1/136209 ,  G02F1/136286 ,  G02F2001/13606 ,  H01L21/76816 ,  H01L27/124 ,  H01L29/78648

    摘要： Disclosed is a manufacturing method for a semiconductor device that prevents excessive etching of a conductive layer, even if the section where a conductive layer contact hole is formed is etched a plurality of times. A light-shielding film 20 is formed on a substrate 30. A buffer film 21, a gate insulating film 22, and a silicon film 11 are formed on the substrate 30 and the light-shielding film 20. A cleared section 40 is formed by etching to remove a section of the buffer film 21 and the gate insulating film 22, the section being on the light-shielding film 20 and disposed outside the area in which the silicon film 11 is formed. A gate electrode film 33 is formed in the cleared section 40. An inter-layer insulating film 23 is formed above the substrate 30. Etching is used to simultaneously form contact holes 45 and 46 extending to the silicon film 11 and a contact hole 44 extending to the light-shielding film 20 in the cleared section 40.

    摘要翻译： 公开了防止导电层过度蚀刻的半导体器件的制造方法，即使形成导电层接触孔的部分被蚀刻多次。 在基板30上形成有遮光膜20.在基板30和遮光膜20上形成有缓冲膜21，栅极绝缘膜22和硅膜11.清除部40由 蚀刻以除去缓冲膜21和栅极绝缘膜22的截面，该截面位于遮光膜20上，并且设置在形成有硅膜11的区域的外侧。 栅极电极膜33形成在清除部分40中。层间绝缘膜23形成在基板30上方。蚀刻用于同时形成延伸到硅膜11的接触孔45和46以及延伸到硅膜11的接触孔44 到清除部分40中的遮光膜20。