公开(公告)号：US4585671A

公开(公告)日：1986-04-29

申请号：US629843

申请日：1984-07-06

申请人： Nobuhisa Kitagawa ,  Masataka Hirose ,  Kazuyoshi Isogaya ,  Yoshinori Ashida

发明人： Nobuhisa Kitagawa ,  Masataka Hirose ,  Kazuyoshi Isogaya ,  Yoshinori Ashida

IPC分类号： H01L31/04 ,  C23C16/24 ,  H01L21/205 ,  H01L21/268 ,  B05D3/06

CPC分类号： C23C16/24 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S148/061 ,  Y10S148/093

摘要： A formation process of an amorphous silicon film, which process comprises subjecting a higher silane containing at least two silicon atoms to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.

摘要翻译： PCT No.PCT / JP83 / 00411 Sec。 371日期1984年7月6日 102（e）日期1984年7月6日PCT提交1983年11月15日PCT公布。 出版物WO84 / 02035 日期：1984年5月24日。一种非晶硅膜的形成方法，该方法包括在具有300nm或更短波长的光的辐射下对含有至少两个硅原子的较高硅烷进行光化学分解，以产生非晶硅 沉积在基底上。

公开(公告)号：US5194398A

公开(公告)日：1993-03-16

申请号：US830967

申请日：1992-02-06

申请人： Kenji Miyachi ,  Nobuhiro Fukuda ,  Yoshinori Ashida ,  Masato Koyama

发明人： Kenji Miyachi ,  Nobuhiro Fukuda ,  Yoshinori Ashida ,  Masato Koyama

IPC分类号： C23C14/06 ,  C23C14/58 ,  C23C16/56 ,  H01L21/203 ,  H01L21/205 ,  H01L21/30 ,  H01L31/20 ,  H01L21/20

CPC分类号： C23C14/0682 ,  C23C14/58 ,  C23C14/5826 ,  C23C14/5846 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/3003 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/909

摘要： A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.

摘要翻译： 一种形成非晶半导体膜的方法，包括：（a）形成厚度为3〜1000的不超过20原子％的氢的半导体膜的成膜步骤，（b）修饰步骤 改变形成的膜，该步骤被重复多次。

公开(公告)号：US5677236A

公开(公告)日：1997-10-14

申请号：US605609

申请日：1996-02-22

申请人： Kimihiko Saitoh ,  Nobuyuki Ishiguro ,  Mitsuru Sadamoto ,  Shin Fukuda ,  Yoshinori Ashida ,  Nobuhiro Fukuda

发明人： Kimihiko Saitoh ,  Nobuyuki Ishiguro ,  Mitsuru Sadamoto ,  Shin Fukuda ,  Yoshinori Ashida ,  Nobuhiro Fukuda

IPC分类号： H01L31/036 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/03685 ,  H01L31/03921 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A thin microcrystalline silicon semiconductor film suitable for use as an intrinsic semiconductor layer in an amorphous silicon solar cell or the like. The thin microcrystalline silicon semiconductor film comprises an amorphous phase with crystallites contained therein in the form of a prismatic or conical crystallite aggregate phase. Additional crystallites may be dispersed as individual crystallites in the amorphous phase. In the thin film, the crystalline fraction may preferably range from 5 to 80% and the crystallite size may preferably range from 2 to 1,000 nm. This thin film can be formed by first forming an initial film to a thickness in a range of from 2 nm to 100 nm at a deposition rate of from 0.01 nm/sec to 0.1 nm/sec on a substrate and then forming a principal film at a deposition rate of from 0.1 nm/sec to 2 nm/sec, for example, in accordance with RF plasma CVD.

摘要翻译： 适合用作非晶硅太阳能电池等中的本征半导体层的薄的微晶硅半导体膜。 薄的微晶硅半导体膜包括非晶相，其中包含棱柱形或锥形微晶聚集相形式的微晶。 另外的微晶可以作为单晶体在非晶相中分散。 在薄膜中，结晶部分优选为5〜80％，微晶尺寸优选为2〜1000nm。 该薄膜可以通过首先在基板上以0.01nm / sec至0.1nm / sec的沉积速率首先在2nm至100nm的范围内形成初始膜，然后形成主膜， 例如，根据RF等离子体CVD，沉积速率为0.1nm / sec至2nm / sec。

公开(公告)号：US5248348A

公开(公告)日：1993-09-28

申请号：US756219

申请日：1991-09-05

申请人： Kenji Miyachi ,  Masato Koyama ,  Yoshinori Ashida ,  Nobuhiro Fukuda

发明人： Kenji Miyachi ,  Masato Koyama ,  Yoshinori Ashida ,  Nobuhiro Fukuda

IPC分类号： H01L31/075 ,  H01L31/20

CPC分类号： H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for preparing an amorphous silicon solar cell is disclosed which comprises forming on a substrate, in the following order, a first electrode, a first conductive film, a thin first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode.the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of:(a) depositing a semiconductor film containing 20 atom % or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 .ANG., and then (b) modifying the deposited film, the sequence of steps being repeated multiple times.The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.