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30 条记录 (耗时 0.023 秒)

    Method for immunochemical measurement of trace components
    2.
    发明授权
    Method for immunochemical measurement of trace components 失效
    微量元素免疫化学测定方法

    公开(公告)号：US4404289A

    公开(公告)日：1983-09-13

    申请号：US298719

    申请日：1981-09-02

    申请人： Nobuhito Masuda ,  Shigeru Nagatomo ,  Yuji Mihara

    发明人： Nobuhito Masuda ,  Shigeru Nagatomo ,  Yuji Mihara

    IPC分类号： G01N33/58 ,  G01N33/54 ,  G01N33/52

    CPC分类号： G01N33/583 ,  Y10S435/805 ,  Y10S436/805 ,  Y10S436/807

    摘要： In an immunochemical measurement method of an antigen or antibody which comprises competitively reacting an antigen or antibody labelled with spectral sensitizer and an antigen or antibody to be measured, bringing either the reaction product of immune reaction or the unreacted component into contact with silver halide, exposing the same to light having a wavelength which the spectral sensitizer absorbs, developing the exposed silver, and, measuring optical density of the thus formed silver image and/or colored dye, the contact with silver halide is performed in the presence of a specific hydrazine compound. Thus, detection sensitivity is markedly improved.

    摘要翻译： 在抗原或抗体的免疫化学测定方法中，其包括将标记有光谱敏化剂的抗原或抗体与要测量的抗原或抗体竞争性地反应，使免疫反应的反应产物或未反应的组分与卤化银接触， 与具有光谱敏化剂吸收的波长的光相同，曝光的银显影，并且测量由此形成的银图像和/或着色染料的光密度，与卤化银的接触在特定肼化合物的存在下进行 。 因此，检测灵敏度显着提高。

    Multi-layer analysis element utilizing specific binding reaction
    5.
    发明授权
    Multi-layer analysis element utilizing specific binding reaction 失效
    利用特异性结合反应的多层分析元件

    公开(公告)号：US4587102A

    公开(公告)日：1986-05-06

    申请号：US637324

    申请日：1984-08-02

    申请人： Shigeru Nagatomo ,  Yukio Yasuda ,  Nobuhito Masuda ,  Hajime Makiuchi ,  Masaki Okazaki

    发明人： Shigeru Nagatomo ,  Yukio Yasuda ,  Nobuhito Masuda ,  Hajime Makiuchi ,  Masaki Okazaki

    IPC分类号： G01N33/58 ,  G01N33/52 ,  G01N33/543 ,  G01N21/78 ,  G01N33/53

    CPC分类号： G01N33/54386 ,  G01N33/525 ,  Y10S435/805 ,  Y10S436/81

    摘要： A dry type multilayer analysis element for assaying a concentration of a specific component utilizing a competitive immunological reaction comprises a detection element comprising a detection layer which receives a labelled complex formed as a result of the competitive immunological reaction or an optically detectable change formed dependent upon an amount of the labelled complex of the specific component and having further provided thereon the detection layer a reaction layer comprising a fibrous porous medium containing fine particles therein. The multilayer analysis element absorbs an amount of a sample solution necessary for the competitive immunological reaction so that the multilayer analysis element has high sensitivity and high reproducibility.

    摘要翻译： 用于使用竞争性免疫反应测定特定成分的浓度的干式多层分析元件包括检测元件，其包含检测层，该检测层接受由于竞争性免疫反应而形成的标记复合物，或者由 量的特定成分的标记复合物，并且还在其上提供检测层，反应层包含其中含有微粒的纤维状多孔介质。 多层分析元件吸收竞争性免疫反应所需的样品溶液的量，使得多层分析元件具有高灵敏度和高再现性。

    Semiconductor integrated circuit
    6.
    发明申请
    Semiconductor integrated circuit 失效

    公开(公告)号：US20060214234A1

    公开(公告)日：2006-09-28

    申请号：US11384361

    申请日：2006-03-21

    申请人： Shigeru Nagatomo

    发明人： Shigeru Nagatomo

    IPC分类号： H01L23/62

    CPC分类号： H01L27/0921

    摘要： A semiconductor integrated circuit has complementary field-effect transistors, one formed in a semiconductor substrate, the other formed in a well in the substrate, and has four power-supply potentials: two supplied to the sources of the field-effect transistors, one supplied to the substrate, and one supplied to the well. An unwanted pair of parasitic bipolar transistors are formed in association with the field-effect transistors. An intentionally formed bipolar transistor operates in series with one of the unwanted parasitic transistors and as a current mirror for the other unwanted parasitic transistor, limiting the flow of unwanted current through the parasitic bipolar transistors.

    Protection circuit for semiconductor device
    7.
    发明授权
    Protection circuit for semiconductor device 失效
    半导体器件保护电路

    公开(公告)号：US5880514A

    公开(公告)日：1999-03-09

    申请号：US941069

    申请日：1997-09-30

    申请人： Shigeru Nagatomo

    发明人： Shigeru Nagatomo

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L29/861 ,  H01L29/00

    CPC分类号： H01L27/0248 ,  H01L27/0255

    摘要： A protection circuit for a semiconductor device, the protection circuit being connected an input terminal of the semiconductor device in parallel with an internal circuit proper of the semiconductor device, comprising a semiconductor substrate having one conductivity, a first diffusion layer having the other conductivity produced along the top surface of the semiconductor substrate, a second diffusion layer having the other conductivity produced along the top surface of the first diffusion layer, the impurity concentration of the second diffusion layer being larger than that of the first diffusion layer, at least one third diffusion layer having one conductivity produced along the top surface of the semiconductor substrate and the first diffusion layer across the junction of the first diffusion layer, the impurity concentration being larger than that of the semiconductor substrate, an insulator film produced to cover a portion of the second and third diffusion layers and the first diffusion layer, a pair of insulator films produced to cover a portion of the remaining area of the third diffusion layers, an electrode arranged to contact the second diffusion layer and to cover the insulator layer covering the first diffusion layer, and the electrode being connected the input terminal and the internal circuit proper of the semiconductor device, whereby the protection circuit allows positive surge voltages to escape, and becomes durable against negative surge voltages.

    摘要翻译： 一种用于半导体器件的保护电路，所述保护电路与所述半导体器件的内部电路本体并联连接所述半导体器件的输入端，所述半导体器件的内部电路包括具有一个导电性的半导体衬底，所述第一扩散层具有沿着 半导体衬底的顶表面，具有沿着第一扩散层的顶表面产生的另一导电性的第二扩散层，第二扩散层的杂质浓度大于第一扩散层的杂质浓度，至少一个第三扩散 具有沿着半导体衬底的顶表面产生的一个电导率的层和穿过第一扩散层的结的第一扩散层，杂质浓度大于半导体衬底的杂质浓度;产生的绝缘膜覆盖第二扩散层的一部分 和第三扩散层和第一扩散层 产生用于覆盖第三扩散层的剩余区域的一部分的一对绝缘膜，布置成接触第二扩散层并覆盖覆盖第一扩散层的绝缘体层的电极，并且电极与 输入端子和半导体器件的内部电路，由此保护电路允许正的浪涌电压逸出，并且耐负的浪涌电压耐用。

    Boosting circuit
    8.
    发明授权
    Boosting circuit 失效
    升压电路

    公开(公告)号：US07511561B2

    公开(公告)日：2009-03-31

    申请号：US11765519

    申请日：2007-06-20

    申请人： Shigeru Nagatomo ,  Kikuo Utsuno

    发明人： Shigeru Nagatomo ,  Kikuo Utsuno

    IPC分类号： G05F1/10 ,  G05F3/02

    CPC分类号： H02M3/07

    摘要： The present invention provides a charge-pump boosting circuit. In a charging period of a capacitor C1, a PMOS transistor Q1 and an NMOS transistor Q2 turn on, and the capacitor C1 is charged by voltage between a potential VCC and a potential VSS. On the other hand, in a discharging period of a boosting capacitor, a PMOS transistor Q3 and a PMOS transistor Q4 turn on, and charges accumulated in the boosting capacitor are discharged. In a discharging period of the capacitor C1, a selector SEL1 selects a terminal T1, and a feedback system, in which operation voltage applied to a gate of the PMOS transistor Q3 changes in accordance with fluctuations in output potential VDD2, is formed. At this time, only a resistance component of the PMOS transistor Q3 exists and no differential amplifier is provided, on a path of current flowing-into the capacitor C1 (between the potential VCC and a low voltage side terminal C1N of the boosting capacitor).

    摘要翻译： 本发明提供一种电荷泵升压电路。 在电容器C1的充电期间，PMOS晶体管Q1和NMOS晶体管Q2导通，电容器C1由电位VCC和电位VSS之间的电压充电。 另一方面，在升压电容器的放电期间，PMOS晶体管Q3和PMOS晶体管Q4导通，并且积蓄在升压电容器中的电荷被放电。 在电容器C1的放电期间，选择器SEL1选择端子T1，并且形成其中施加到PMOS晶体管Q3的栅极的工作电压根据输出电位VDD2的波动而变化的反馈系统。 此时，在流入电容器C1（电压VCC与升压电容器的低压侧端子C1N之间）的电流路径上，仅存在PMOS晶体管Q3的电阻成分，并且不设置差分放大器。

    Power-on reset circuit for generating a reset pulse signal upon detection of a power supply voltage
    9.
    发明授权
    Power-on reset circuit for generating a reset pulse signal upon detection of a power supply voltage 失效
    上电复位电路，用于在检测到电源电压时产生复位脉冲信号

    公开(公告)号：US06335646B1

    公开(公告)日：2002-01-01

    申请号：US09552315

    申请日：2000-04-19

    申请人： Shigeru Nagatomo

    发明人： Shigeru Nagatomo

    IPC分类号： H03K1722

    CPC分类号： H03K17/223

    摘要： A power-on reset circuit includes a capacitor, an inverter, a resistor and first and second transistors which are connected in series between a power supply line and ground. The electric current flowing through the resistor flow through the first and second transistors with a certain time delay because of an electric charge stored in the capacitor. A rising of a power supply voltage is applied to the inverter with a certain time delay when the power supply voltage goes up. According to the power-on reset circuit, a reset pulse can be generated regardless a speed of rising of the power supply voltage.

    摘要翻译： 上电复位电路包括在电源线和地之间串联连接的电容器，反相器，电阻器和第一和第二晶体管。 由于存储在电容器中的电荷，流经电阻器的电流以一定的时间延迟流过第一和第二晶体管。 当电源电压上升时，电源电压的上升以一定的时间延迟施加到逆变器。 根据上电复位电路，无论电源电压上升的速度如何，均可产生复位脉冲。

    Photographic material containing a novel polymer mordant
    10.
    发明授权
    Photographic material containing a novel polymer mordant 失效
    含有新型聚合物媒染剂的摄影材料

    公开(公告)号：US4312940A

    公开(公告)日：1982-01-26

    申请号：US166290

    申请日：1980-07-07

    申请人： Taku Nakamura ,  Shigeru Nagatomo

    发明人： Taku Nakamura ,  Shigeru Nagatomo

    IPC分类号： G03C8/56 ,  C08F8/00 ,  C08F8/44 ,  C08F12/00 ,  C08F20/00 ,  C08F20/34 ,  C08F20/52 ,  C08F26/00 ,  G03C1/005 ,  G03C1/835 ,  G03C1/84

    CPC分类号： G03C1/835 ,  Y10S430/142

    摘要： A photographic light-sensitive material comprising at least one layer containing a polymer dispersion of the following formula (I) or (II) as a mordant ##STR1## wherein A represents a monomer unit obtained from at least one monomer having at least two copolymerizable ethylenically unsaturated groups at least one of which is in the side chain; B represents a monomer unit obtained from at least one copolymerizable monoethylenically unsaturated monomer; D.sup..sym. represents a 5- or 6-membered heterocyclic group containing one or two nitrogen atoms one of which is positively charged and D may contain one or more substituents; R.sub.1 represents a hydrogen atom or a lower alkyl group; R.sub.2 and R.sub.3, which may be the same or different, each represents an alkyl group or an aralkyl group, or R.sub.2 and R.sub.3 may combine together with the nitrogen atom to which they are attached and form a 5- or 6-membered ring; X.sup..crclbar. represents an anion; Q represents an alkylene group, a phenylene group, an aralkylene group or a group of the formula ##STR2## wherein Y represents an alkylene group or an aralkylene group and R represents an alkyl group; and x, y and z represent the molar percentage of the respective units in the polymer and x is about 0.5 to 10%, y is about 0 to 60% and z is about 30 to 99.5%.

    摘要翻译： 包含至少一层包含下式（I）或（II）的聚合物分散体作为媒染剂的影像感光材料（I）其中A表示从 至少一种具有至少两个可共聚的烯属不饱和基团的单体，其中至少一种在侧链中; B表示由至少一种可共聚的单烯属不饱和单体获得的单体单元; D（+）表示含有一个或两个氮原子的5-或6-元杂环基团，其中一个带正电荷，D可含有一个或多个取代基; R1表示氢原子或低级烷基; R 2和R 3可以相同或不同，各自表示烷基或芳烷基，或者R 2和R 3可以与它们所连接的氮原子一起形成5-或6-元环; X（ - ）表示阴离子; Q表示亚烷基，亚苯基，亚芳烷基或下式的基团：其中Y表示亚烷基或亚芳烷基，R表示烷基; x，y和z表示聚合物中各单元的摩尔百分比，x为约0.5至10％，y为约0至60％，z为约30至99.5％。