公开(公告)号：US06422088B1

公开(公告)日：2002-07-23

申请号：US09666085

申请日：2000-09-21

申请人： Nobukazu Oba ,  Yoshifumi Murakami ,  Yukihiko Tanizawa ,  Hiroaki Tanaka ,  Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Nobukazu Oba ,  Yoshifumi Murakami ,  Yukihiko Tanizawa ,  Hiroaki Tanaka ,  Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L900

CPC分类号： G01L27/007 ,  G01D3/08 ,  G01L9/0054 ,  G01L9/02 ,  G01R17/10

摘要： A reference voltage generating circuit is constituted by resistors RE and RF each having a resistance not influenced by an application of pressure. The reference voltage generating circuit is connected between one and the other ends of a bridge circuit. A failure judgement of the bridge circuit is performed based on a comparison of a voltage difference VBC between two midpoints B and C of the bridge circuit and voltage differences VCE and VBE between a reference voltage level of the reference voltage generating circuit and the voltage levels of two midpoints B and C.

摘要翻译： 参考电压发生电路由电阻器RE和RF构成，每个电阻器不受施加压力的影响。 参考电压产生电路连接在桥接电路的一端和另一端之间。 基于桥电路的两个中点B和C之间的电压差VBC与参考电压产生电路的参考电压电平之间的电压差VCE和VBE的比较，执行桥电路的故障判断， 两个中点B和C.

公开(公告)号：US06401018B1

公开(公告)日：2002-06-04

申请号：US09709350

申请日：2000-11-13

申请人： Nobukazu Oba ,  Yoshifumi Murakami

发明人： Nobukazu Oba ,  Yoshifumi Murakami

IPC分类号： G01M1700

CPC分类号： G01D3/08 ,  G01R31/2829

摘要： A sensor device includes a sensor circuit for measuring a physical amount such as pressure, a voltage detector for detecting a voltage actually supplied to the sensor circuit, and an oscillator for generating an oscillating signal when the voltage detector finds the voltage supplied to the sensor circuit is abnormally low. The sensor signal and the oscillating signal are selectively supplied to a controller. The controller controls various devices connected thereto based on the sensor signal, while it detects a malfunction of the sensor device based on either a high level signal or a low level signal in the oscillating signal. Thus, the malfunction of the sensor device is automatically detected without fail.

摘要翻译： 传感器装置包括用于测量诸如压力的物理量的传感器电路，用于检测实际提供给传感器电路的电压的电压检测器以及当电压检测器找到提供给传感器电路的电压时产生振荡信号的振荡器 异常低 选择性地将传感器信号和振荡信号提供给控制器。 控制器根据传感器信号控制连接到其上的各种装置，同时基于振荡信号中的高电平信号或低电平信号检测传感器装置的故障。 因此，自动检测传感器装置的故障。

公开(公告)号：US06343498B1

公开(公告)日：2002-02-05

申请号：US09686000

申请日：2000-10-12

申请人： Nobukazu Oba ,  Makoto Hatanaka ,  Yoshifumi Murakami

发明人： Nobukazu Oba ,  Makoto Hatanaka ,  Yoshifumi Murakami

IPC分类号： G01R3102

CPC分类号： G01D3/08 ,  G01R31/024

摘要： A sensor apparatus which can accurately detect a fault due to poor connection or the like at a connection portion between a sensor portion and a control portion. The sensor apparatus is provided with a sensor portion and a control portion which is electrically connected to the sensor portion via a power supply line, an output line and a ground line. The control portion includes a switch and the diagnosis circuit. The switch switches the power supply to the sensor portion to one of the power supply line and the output line. When the power is supplied to the output line, the diagnosis circuit measures current flowing from the output line to the ground line, and detects the fault by comparing the measured current with a reference voltage value.

摘要翻译： 一种传感器装置，其可以在传感器部分和控制部分之间的连接部分处精确地检测由于连接不良等引起的故障。 传感器装置设置有传感器部分和通过电源线，输出线和接地线电连接到传感器部分的控制部分。 控制部分包括开关和诊断电路。 开关将传感器部分的电源切换到电源线和输出线之一。 当向输出线供电时，诊断电路测量从输出线流向地线的电流，并通过将测得的电流与参考电压值进行比较来检测故障。

公开(公告)号：US5932921A

公开(公告)日：1999-08-03

申请号：US958319

申请日：1997-10-27

申请人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

发明人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

IPC分类号： G01L9/00 ,  H01L21/3063 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01L9/0042 ,  H01L29/84

摘要： When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.

摘要翻译： 当制造压力传感器等的隔膜部分时，需要进行各向异性蚀刻。 该蚀刻通过电化学停止蚀刻进行。 在该过程中，向隔膜部分施加电压。 二极管连接在所述隔膜部分和集成电路之间，以防止电压施加到与隔膜部分连接的集成电路。 二极管通过将侧面p-n-p晶体管的基极和集电极彼此短接而获得。 集电极区域形成为从导体图案的正下方偏移，以防止寄生MOS效应产生用作漏电流路径的通道。 此外，沿集电区域的外周形成充当通道阻挡件的重掺杂n型扩散区域。

公开(公告)号：US08130115B2

公开(公告)日：2012-03-06

申请号：US12507916

申请日：2009-07-23

申请人： Norihiro Kurumado ,  Hiroshi Okada ,  Nobukazu Oba ,  Hirofumi Uenoyama

发明人： Norihiro Kurumado ,  Hiroshi Okada ,  Nobukazu Oba ,  Hirofumi Uenoyama

IPC分类号： G08B21/00

CPC分类号： G01P13/045 ,  G01D5/24428 ,  G01D5/2451

摘要： In the normal rotation direction, a change in the main sensing signal caused by a front edge is defined as a signal change caused by an effective edge, and a change in the main sensing signal caused by a back edge is defined as a signal change caused by an ineffective edge. In the reverse direction, a change in the main sensing signal caused by the back edge is defined as a signal change caused by an effective edge, and a change caused by a front edge is defined as a signal change caused by an ineffective edge. Regardless of the rotation direction, a detection signal generating circuit generates a detection signal including falling-edge changes and rising edge changes caused by the effective edge and ineffective edge respectively. When the direction is changed, the signal change on the detection signal is prohibited. As a result, gear tooth detection discrepancies are prevented.

摘要翻译： 在正常旋转方向上，由前沿引起的主感测信号的变化被定义为由有效边缘引起的信号变化，并且由后沿引起的主感测信号的变化被定义为引起的信号变化 由无效的边缘。 在相反方向上，由后沿引起的主感测信号的变化被定义为由有效边缘引起的信号变化，并且由前沿引起的变化被定义为由无效边缘引起的信号变化。 不管旋转方向如何，检测信号发生电路分别产生包括下降沿变化和由有效边缘和无效边缘引起的上升沿变化的检测信号。 当方向改变时，检测信号上的信号变化被禁止。 结果，防止齿轮齿检测差异。

公开(公告)号：US20100019917A1

公开(公告)日：2010-01-28

申请号：US12507916

申请日：2009-07-23

申请人： Norihiro Kurumado ,  Hiroshi Okada ,  Nobukazu Oba ,  Hirofumi Uenoyama

发明人： Norihiro Kurumado ,  Hiroshi Okada ,  Nobukazu Oba ,  Hirofumi Uenoyama

IPC分类号： G08B21/00

CPC分类号： G01P13/045 ,  G01D5/24428 ,  G01D5/2451

摘要： In the normal rotation direction, a change in the main sensing signal caused by a front edge is defined as a signal change caused by an effective edge, and a change in the main sensing signal caused by a back edge is defined as a signal change caused by an ineffective edge. In the reverse direction, a change in the main sensing signal caused by the back edge is defined as a signal change caused by an effective edge, and a change caused by a front edge is defined as a signal change caused by an ineffective edge. Regardless of the rotation direction, a detection signal generating circuit generates a detection signal including falling-edge changes and rising edge changes caused by the effective edge and ineffective edge respectively. When the direction is changed, the signal change on the detection signal is prohibited. As a result, gear tooth detection discrepancies are prevented.

摘要翻译： 在正常旋转方向上，由前沿引起的主感测信号的变化被定义为由有效边缘引起的信号变化，并且由后沿引起的主感测信号的变化被定义为引起的信号变化 由无效的边缘。 在相反方向上，由后沿引起的主感测信号的变化被定义为由有效边缘引起的信号变化，并且由前沿引起的变化被定义为由无效边缘引起的信号变化。 不管旋转方向如何，检测信号发生电路分别产生包括下降沿变化和由有效边缘和无效边缘引起的上升沿变化的检测信号。 当方向改变时，检测信号上的信号变化被禁止。 结果，防止齿轮齿检测差异。

公开(公告)号：US5920106A

公开(公告)日：1999-07-06

申请号：US987500

申请日：1997-12-09

申请人： Nobukazu Oba ,  Toshio Ikuta ,  Minekazu Sakai ,  Tsuyoshi Fukada ,  Yasutoshi Suzuki

发明人： Nobukazu Oba ,  Toshio Ikuta ,  Minekazu Sakai ,  Tsuyoshi Fukada ,  Yasutoshi Suzuki

IPC分类号： G01L9/04 ,  B81B3/00 ,  G01L9/00 ,  H01L29/84

CPC分类号： G01L9/0042

摘要： A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion layer is formed in the N- conductivity type semiconductor layer to fix the electric potential of the N- conductivity type layer. The first conductivity type area surrounds the diaphragm. Therefore, when the N- conductivity type area is supplied with electric potential, the potential gradient in the N- conductivity type layer is small. Thus, the leakage current which flows to a pn junction between the gauge resistors and the N- conductivity type area is reduced.

摘要翻译： 半导体压力检测装置包括形成在具有减小的厚度的P-导电型半导体衬底的部分处的膜片。 在基板上形成的N-导电型半导体层的表面上形成有规格电阻。 在N导电型半导体层中形成N +导电型扩散层，以固定N-导电型层的电位。 第一导电类型区域围绕隔膜。 因此，当N-导电类型区域被提供电位时，N-导电类型层中的电位梯度小。 因此，流向量规电阻器与N-导电型区域之间的pn结的漏电流减小。

公开(公告)号：US5761957A

公开(公告)日：1998-06-09

申请号：US796117

申请日：1997-02-06

申请人： Nobukazu Oba ,  Yasutoshi Suzuki ,  Inao Toyoda ,  Masaki Onoue

发明人： Nobukazu Oba ,  Yasutoshi Suzuki ,  Inao Toyoda ,  Masaki Onoue

IPC分类号： B81C1/00 ,  G01L9/00 ,  G01L19/04 ,  G01L9/06 ,  H01C17/28

CPC分类号： B81C1/00404 ,  G01L19/04 ,  G01L9/0042 ,  Y10T29/49103

摘要： A semiconductor pressure sensor includes a diaphragm of an octagonal shape formed on a (110) silicon substrate by anisotropic etching. When a distance between two sides of the diaphragm, which are defined by intersecting lines of a (110) face and a (111) face of the silicon substrate, is represented as L1 and a length of a side of the diaphragm, which is defined by an intersecting line of the (110) face and a (100) face, is represented as L2, the diaphragm is formed so as to satisfy the following relationship: 0.65

摘要翻译： 半导体压力传感器包括通过各向异性蚀刻形成在（110）硅衬底上的八边形形状的膜片。 当由膜的（110）面和（111）面的交叉线限定的隔膜的两侧之间的距离被表示为L1和限定的隔膜的一侧的长度 通过（110）面和（100）面的交线表示为L2，膜片形成为满足以下关系：0.65

公开(公告)号：US08008948B2

公开(公告)日：2011-08-30

申请号：US12000304

申请日：2007-12-11

申请人： Yasuaki Makino ,  Hiroshi Okada ,  Reiji Iwamoto ,  Nobukazu Oba ,  Shinji Nakatani ,  Norikazu Ohta ,  Hideki Hosokawa

发明人： Yasuaki Makino ,  Hiroshi Okada ,  Reiji Iwamoto ,  Nobukazu Oba ,  Shinji Nakatani ,  Norikazu Ohta ,  Hideki Hosokawa

IPC分类号： G01R19/00 ,  G06M1/10

CPC分类号： G01R19/04

摘要： A peak voltage detector circuit detects a peak voltage of an input voltage. The input voltage is input into a first input terminal of a comparator. A counter circuit counts up a counter value in synchronization with a first clock signal, when a signal output from the comparator is in a first state. The counter circuit counts down the counter value in synchronization with a second clock signal. A digital-analog conversion circuit outputs an output voltage corresponding to the counter value, and the output voltage is input into a second input terminal of the comparator. The first clock signal has a wave period shorter than that of the second clock signal.

摘要翻译： 峰值电压检测电路检测输入电压的峰值电压。 输入电压被输入到比较器的第一输入端。 当从比较器输出的信号处于第一状态时，计数器电路与第一时钟信号同步地计数计数器值。 计数器电路与第二个时钟信号同步地计数计数器值。 数字模拟转换电路输出对应于计数器值的输出电压，输出电压被输入到比较器的第二输入端。 第一时钟信号具有比第二时钟信号短的波周期。

公开(公告)号：US20090002033A1

公开(公告)日：2009-01-01

申请号：US12213893

申请日：2008-06-26

申请人： Shinji Nakatani ,  Nobukazu Oba ,  Norikazu Ohta ,  Hideki Hosokawa

发明人： Shinji Nakatani ,  Nobukazu Oba ,  Norikazu Ohta ,  Hideki Hosokawa

IPC分类号： H03K5/22

CPC分类号： H03K5/1252 ,  H03K5/086

摘要： The present invention reliably removes a signal change associated with a noise component from a comparison signal of a comparator. A comparator circuit includes a comparator and a timer circuit. After a reversal of the comparison signal, if the level of the comparator is sustained at least from a first time to a second time, an output signal is reversed and output. The timer circuit includes a memory unit that is shifted to a memory state in which the reversal of the comparison signal is stored at the first time if the reversal is verified. If the comparison signal is reversed during the interval between the first time and second time, the memory state is cleared.

摘要翻译： 本发明可以从比较器的比较信号可靠地去除与噪声分量相关联的信号变化。 比较器电路包括比较器和定时器电路。 在比较信号反转之后，如果比较器的电平至少从第一时间持续到第二时间，则输出信号被反转并输出。 定时器电路包括一个存储器单元，该存储器单元被转移到如果反转被验证则在第一时间存储比较信号的反转的存储器状态。 如果在第一次和第二次之间的间隔期间比较信号反转，则存储器状态被清除。