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11 条记录 (耗时 0.034 秒)

    High-frequency amplifier integrated-circuit device
    1.
    发明授权
    High-frequency amplifier integrated-circuit device 失效
    高频放大器集成电路器件

    公开(公告)号：US5874859A

    公开(公告)日：1999-02-23

    申请号：US738022

    申请日：1996-10-25

    申请人： Nobumitsu Amachi ,  Yasushi Yamamoto ,  Koichi Sakamoto ,  Mitsuhiro Tsuchioka

    发明人： Nobumitsu Amachi ,  Yasushi Yamamoto ,  Koichi Sakamoto ,  Mitsuhiro Tsuchioka

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/06 ,  H03F3/195 ,  H03F3/55 ,  H03F3/16

    CPC分类号： H01L27/0629 ,  H01L27/0605 ,  H01L2223/6644

    摘要： A high-frequency amplifying integrated-circuit device is provided in which variations of gain can be reduced and which can be manufactured at a low cost as compared with prior art devices. A high-frequency amplifying integrated-circuit device includes a semiconductor substrate; and a transistor which is formed on the semiconductor substrate and which has a plurality of first electrodes, a plurality of second electrodes, and at least one third electrode, a high-frequency signal input to the plurality of second electrodes being amplified by the transistor and output from the third electrode, wherein at least two first electrodes from among the plurality of first electrodes are each grounded via a capacitor, and the electrostatic capacitance values of the two capacitors are set at mutually different values.

    摘要翻译： 提供了一种高频放大集成电路器件，其中与现有技术器件相比，增益的变化可以降低并且可以以低成本制造。 高频放大集成电路器件包括半导体衬底; 以及晶体管，其形成在所述半导体基板上并且具有多个第一电极，多个第二电极以及至少一个第三电极，输入到所述多个第二电极的高频信号被所述晶体管放大;以及 从所述第三电极输出，其中，所述多个第一电极中的至少两个第一电极经由电容器接地，并且所述两个电容器的静电电容值被设定为相互不同的值。

    Image sensor and manufacturing method for the same
    10.
    发明授权
    Image sensor and manufacturing method for the same 失效
    图像传感器及其制造方法相同

    公开(公告)号：US5043567A

    公开(公告)日：1991-08-27

    申请号：US525734

    申请日：1990-05-21

    申请人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

    发明人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

    IPC分类号： G06K7/10 ,  H01L27/146 ,  H01L31/105 ,  H04N5/228 ,  H04N5/369

    CPC分类号： G06K7/10841 ,  H01L27/14643 ,  H01L31/1055 ,  H04N3/1581 ,  Y10S148/092

    摘要： A method of manufacturing image sensors where (a) a first conductive film of a transparent material is formed over and in contact with a transparent substrate; (b) a photosensitive semiconductor film is formed over and in contact with the film; (c) the first conductive film and the semiconductor film are patterned by laser scribing; (d) a first insulating film is formed over the above films and in contact with the first conductive film and the semiconductor film and portions thereof are removed which are not necessary to define the image sensors in the patterned semiconductor film; (e) a second conductive film is formed over the semiconductor film and the remaining portions of the first insulating film in order to make contact with the semiconductor film; (f) the second conductive film is patterned; (g) a second insulating film is formed over and in contact with the second conductive film; (h) the second insulating film is patterned; and (i) an electrode arrangement is formed for withdrawing electrical signals from the second conductive film through the patterned second insulating film, wherein the patternings of the first conductive film, the second conductive film, and the second insulating film are primarily performed by laser scribing to reduce the fabrication cost of the image sensors.