公开(公告)号：US5138402A

公开(公告)日：1992-08-11

申请号：US807613

申请日：1991-12-13

申请人： Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Nobuo Watanabe ,  Masahiko Okunuki

发明人： Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC分类号： H01J9/02 ,  H01J1/308

CPC分类号： H01J1/308

摘要： A semiconductor electron emitting device comprising a Schottky electrode and a p type semiconductor. The Schottky electrode is disposed on the p type semiconductor and defines a junction formed therebetween. The p type semiconductor has an impurity concentration within a predetermined range adapted for causing an avalanche breakdown responsive to a reverse biasing voltage applied between said p type semiconductor and said Schottky electrode. Electrons are emitted from the Schottky electrode in response to the application of the reverse bias voltage.

摘要翻译： 一种包括肖特基电极和p型半导体的半导体电子发射器件。 肖特基电极设置在p型半导体上并且限定其间形成的结。 p型半导体具有适于根据施加在所述p型半导体和所述肖特基电极之间的反向偏置电压引起雪崩击穿的预定范围内的杂质浓度。 响应于反向偏置电压的应用，电子从肖特基电极发射。

公开(公告)号：US4999083A

公开(公告)日：1991-03-12

申请号：US415766

申请日：1989-10-02

申请人： Nobuo Watanabe ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Masahiko Okunuki

发明人： Nobuo Watanabe ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Masahiko Okunuki

IPC分类号： H01L21/302 ,  C23F1/02 ,  H01L21/306

CPC分类号： C23F1/02 ,  H01L21/30604

摘要： A fine working method of a crystalline material comprises forming an ion injection region in a crystalline material by irradiating a focused ion beam on a crystalline material and subsequently removing a predetermined region of the ion injection region by applying a chemical etching treatment. The method includes performing ion injection where no removal of the predetermined region occurs even if the crystalline material is exposed to an etchant. The predetermined region is removed by injecting an etchant into the ion injection region.

公开(公告)号：US4956578A

公开(公告)日：1990-09-11

申请号：US224912

申请日：1988-07-27

申请人： Akira Shimizu ,  Hidetoshi Suzuki ,  Masahiko Okunuki ,  Haruhito Ono ,  Ichiro Nomura ,  Yoshikazu Banno ,  Toshihiko Takeda ,  Tetsuya Kaneko

发明人： Akira Shimizu ,  Hidetoshi Suzuki ,  Masahiko Okunuki ,  Haruhito Ono ,  Ichiro Nomura ,  Yoshikazu Banno ,  Toshihiko Takeda ,  Tetsuya Kaneko

IPC分类号： H01J3/10 ,  H01J1/316 ,  H01J3/18 ,  H01J3/30

CPC分类号： H01J1/316 ,  H01J2201/3165

摘要： A surface conduction electron-emitting device includes a high-potential electrode provided on a substrate surface, an electron-emitting region provided in contact with the periphery of an exposed part of the high-potential electrode, and a low-potential electrode in contact with the periphery of the electron-emitting region. The low-potential electrode may project upward in the thickness direction of the substrate to a higher level than the high-potential electrode. A device for applying a voltage may further provided between the high-potential electrode and low-potential electrode. The low-potential electrode may be divided into plural numbers and potential may be applied to each of the low-potential electrodes independently.

公开(公告)号：US08084365B2

公开(公告)日：2011-12-27

申请号：US12880188

申请日：2010-09-13

申请人： Taiko Motoi ,  Kenji Tamamori ,  Shinan Wang ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba ,  Nobuki Yoshimatsu

发明人： Taiko Motoi ,  Kenji Tamamori ,  Shinan Wang ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba ,  Nobuki Yoshimatsu

IPC分类号： H01L21/308

CPC分类号： B82Y10/00 ,  H01L21/3083 ,  H01L21/31144

摘要： A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width.

摘要翻译： 使用含有Si的基板通过蚀刻制造纳米结构体的方法。 将聚焦的Ga离子或In离子束照射在含有Si的衬底的表面上。 注入Ga离子或In离子，同时溅射衬底的表面，使得在衬底的表面上形成含有Ga或In的层。 使用含有氟（F）的气体进行干蚀刻，其中包含形成在基板表面上的Ga或In的层作为蚀刻掩模，并且纳米结构形成为具有至少2μm锡的图案 根据预定线宽度的深度。

公开(公告)号：US20080067437A1

公开(公告)日：2008-03-20

申请号：US11678244

申请日：2007-02-23

申请人： Masahiko OKUNUKI ,  Haruhito Ono ,  Shinan Wang ,  Kenji Tamamori

发明人： Masahiko OKUNUKI ,  Haruhito Ono ,  Shinan Wang ,  Kenji Tamamori

IPC分类号： H01J37/08

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/047 ,  H01J37/3174 ,  H01J2237/0435 ,  H01J2237/31732 ,  H01J2237/31744

摘要： A charged beam processing apparatus including a multi charged beam optical system which converges a plurality of charged beams by a lens and deflects the plurality of charged beams by a deflector to irradiate an object to be processed in a processing chamber, and a supply unit which supplies a gas into the processing chamber, includes a gas controller which controls the gas to be supplied into the processing chamber based on a processing condition, and a beam controller which controls the plurality of charged beams based on the processing condition, wherein at least one of material deposition on the surface of the object and etching of the surface of the object forms a structure.

摘要翻译： 一种带电波束处理装置，包括多透光束光学系统，其通过透镜会聚多个带电波束，并且通过偏转器偏转所述多个带电波束以在处理室中照射待处理物体;以及供应单元， 进入处理室的气体包括：气体控制器，其基于处理条件控制供给到处理室中的气体;以及光束控制器，其基于处理条件控制多个带电束，其中，至少一个 在物体的表面上的材料沉积和对象的表面的蚀刻形成结构。

公开(公告)号：US07700390B2

公开(公告)日：2010-04-20

申请号：US12119168

申请日：2008-05-12

申请人： Shinan Wang ,  Kenji Tamamori ,  Taiko Motoi ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba

发明人： Shinan Wang ,  Kenji Tamamori ,  Taiko Motoi ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba

IPC分类号： H01L21/00 ,  H01L21/04 ,  H01L21/425

CPC分类号： G02B6/10 ,  B82Y20/00 ,  G02B1/005 ,  G02B6/1225

摘要： A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

摘要翻译： 一种制造三维光子晶体的方法包括以下步骤：形成电介质薄膜; 通过使用聚焦离子束将离子选择性地注入到电介质薄膜中以在电介质薄膜上形成掩模; 通过选择性地去除在电介质薄膜上没有形成掩模的电介质薄膜的暴露部分来形成图案; 在其上形成图案的电介质薄膜上形成牺牲层; 并且平坦化形成在电介质薄膜上的牺牲层，直到图案到达表面。

公开(公告)号：US20110027998A1

公开(公告)日：2011-02-03

申请号：US12880188

申请日：2010-09-13

申请人： Taiko Motoi ,  Kenji Tamamori ,  Shinan Wang ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba ,  Nobuki Yoshimatsu

发明人： Taiko Motoi ,  Kenji Tamamori ,  Shinan Wang ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba ,  Nobuki Yoshimatsu

IPC分类号： H01L21/308

CPC分类号： B82Y10/00 ,  H01L21/3083 ,  H01L21/31144

摘要： A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width.

摘要翻译： 使用含有Si的基板通过蚀刻制造纳米结构体的方法。 将聚焦的Ga离子或In离子束照射在含有Si的衬底的表面上。 注入Ga离子或In离子，同时溅射衬底的表面，使得在衬底的表面上形成含有Ga或In的层。 使用含有氟（F）的气体进行干蚀刻，其中包含形成在基板表面上的Ga或In的层作为蚀刻掩模，并且纳米结构形成为具有至少2μm锡的图案 根据预定线宽度的深度。

公开(公告)号：US20080286892A1

公开(公告)日：2008-11-20

申请号：US12119168

申请日：2008-05-12

申请人： Shinan Wang ,  Kenji Tamamori ,  Taiko Motoi ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba

发明人： Shinan Wang ,  Kenji Tamamori ,  Taiko Motoi ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba

IPC分类号： H01L21/00 ,  G02B6/10

CPC分类号： G02B6/10 ,  B82Y20/00 ,  G02B1/005 ,  G02B6/1225

摘要： A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

摘要翻译： 一种制造三维光子晶体的方法包括以下步骤：形成电介质薄膜; 通过使用聚焦离子束将离子选择性地注入到电介质薄膜中以在电介质薄膜上形成掩模; 通过选择性地去除在电介质薄膜上没有形成掩模的电介质薄膜的暴露部分来形成图案; 在其上形成图案的电介质薄膜上形成牺牲层; 并且平坦化形成在电介质薄膜上的牺牲层，直到图案到达表面。

公开(公告)号：US20080283493A1

公开(公告)日：2008-11-20

申请号：US12120461

申请日：2008-05-14

申请人： Kenji Tamamori ,  Masahiko Okunuki ,  Shinan Wang ,  Taiko Motoi ,  Haruhito Ono ,  Toshiaki Aiba

发明人： Kenji Tamamori ,  Masahiko Okunuki ,  Shinan Wang ,  Taiko Motoi ,  Haruhito Ono ,  Toshiaki Aiba

IPC分类号： B29D11/00 ,  B44C1/22

CPC分类号： B29D11/00 ,  G02B2006/1213 ,  G03F7/2065 ,  H01S5/105 ,  H01S5/2081

摘要： A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

摘要翻译： 一种用于形成蚀刻掩模的方法，包括以下步骤：将聚焦离子束照射到衬底表面，并形成用于在照射区域中包括含离子的部分的倾斜蚀刻的蚀刻掩模。 制造三维结构的方法包括以下步骤：制备基底; 将光离子束照射到所述基板的表面，并在所述照射区域中形成包括含离子的部分的蚀刻掩模; 并且使用蚀刻掩模从对角线方向对基板进行干蚀刻并形成多个孔。

公开(公告)号：US08337712B2

公开(公告)日：2012-12-25

申请号：US12120461

申请日：2008-05-14

申请人： Kenji Tamamori ,  Masahiko Okunuki ,  Shinan Wang ,  Taiko Motoi ,  Haruhito Ono ,  Toshiaki Aiba

发明人： Kenji Tamamori ,  Masahiko Okunuki ,  Shinan Wang ,  Taiko Motoi ,  Haruhito Ono ,  Toshiaki Aiba

IPC分类号： B29D11/00 ,  B44C1/22

CPC分类号： B29D11/00 ,  G02B2006/1213 ,  G03F7/2065 ,  H01S5/105 ,  H01S5/2081

摘要： A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

摘要翻译： 形成蚀刻掩模的方法包括将聚焦的离子束照射到衬底的表面上，并且在照射区域中形成用于包括含离子的部分的倾斜蚀刻的蚀刻掩模。 制造三维结构的方法包括：准备衬底，将聚焦的离子束照射到衬底的表面上，并在照射区域中形成包括含离子的部分的蚀刻掩模，并从对角线对衬底进行干蚀刻 方向，并形成多个孔。