公开(公告)号：US06835665B2

公开(公告)日：2004-12-28

申请号：US10090761

申请日：2002-03-06

申请人： Nobuyuki Mise ,  Ken Yoshioka ,  Ryoji Nishio ,  Tatehito Usui

发明人： Nobuyuki Mise ,  Ken Yoshioka ,  Ryoji Nishio ,  Tatehito Usui

IPC分类号： H01L21302

CPC分类号： H01L21/31144 ,  C23F4/00 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L21/32139 ,  H01L28/65 ,  H01L43/12

摘要： A film of hardly-etched material formed on a substrate is etched using a mask formed on the film of hardly-etched material and a plasma, wherein the film of hardly-etched material is etched using the mask formed with a side wall angled at 90 degrees or less with respect to the surface of the substrate, thereby forming the etched film with a taper angle to the surface of the substrate equal to or larger than the taper angle of the mask.

摘要翻译： 使用形成在难蚀刻材料和等离子体的膜上的掩模蚀刻在基板上形成的几乎蚀刻的材料的膜，其中使用形成有角度为90°的侧壁的掩模蚀刻难蚀刻材料的膜 度以下，由此形成与基板的表面成锥角的蚀刻膜等于或大于掩模的锥角。

公开(公告)号：US5946184A

公开(公告)日：1999-08-31

申请号：US927278

申请日：1997-09-11

申请人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

发明人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

IPC分类号： H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck includes a pair of electrodes having different polarities; and a dielectric film, formed on top surfaces of the pair of electrodes, on which a sample is to be electrostatically attracted and held when a DC voltage is applied between the pair of electrodes; wherein the respective amounts of electric charges stored on attracting portions of the dielectric film corresponding to the pair of electrodes, directly before stopping supply of the DC voltage applied between the pair of electrodes, are substantially equal to each other. With this chuck, the electric charges stored on the attracting portions of the dielectric film after stopping supply of the DC voltage can be eliminated due to the balance between the electric charges having different polarities. The electrostatic chuck is subjected to a significantly reduced residual attracting force.

摘要翻译： 静电卡盘包括具有不同极性的一对电极; 以及形成在所述一对电极的顶表面上的电介质膜，当在所述一对电极之间施加直流电压时，待静电吸引和保持样品的电介质膜; 其特征在于，在停止施加在所述一对电极之间的直流电压的供给之前，直接在与所述一对电极对应的所述电介质膜的吸引部分上存储的各种电荷量基本相等。 利用该卡盘，可以通过在极性不同的电荷之间的平衡来消除在停止供给直流电压之后存储在电介质膜的吸引部分上的电荷。 静电吸盘受到显着降低的残留吸引力。

公开(公告)号：US06243251B1

公开(公告)日：2001-06-05

申请号：US09382779

申请日：1999-08-25

申请人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

发明人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

IPC分类号： H02N1300

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck includes a pair of electrodes having different polarities, and a dielectric film, formed on top surfaces of the pair of electrodes, on which a sample to be electrostatically attracted and held when a DC voltage is applied between the pair of electrodes, wherein the respective amounts of electric charges stored on attracting portions of the dielectric film corresponding to the pair of electrodes, directly before stopping supply of the DC voltage applied between the pair of electrodes, are substantially equal to each other. With this chuck, the electric charges stored on the attracting portions of the dielectric film after stopping supply of the DC voltage can be eliminated due to the balance between the electric charges having different polarities. The electrostatic chuck is subjected to a significantly reduced residual attracting force.

摘要翻译： 静电卡盘包括具有不同极性的一对电极和形成在一对电极的顶表面上的电介质膜，当在一对电极之间施加直流电压时，待静电吸引并保持的样品，其中 在停止施加在该对电极之间的直流电压的供给之前，直接在与该对电极对应的电介质膜的吸引部分上存储的电荷的相应量基本相等。 利用该卡盘，可以通过在极性不同的电荷之间的平衡来消除在停止供给直流电压之后存储在电介质膜的吸引部分上的电荷。 静电吸盘受到显着降低的残留吸引力。

公开(公告)号：US06596551B1

公开(公告)日：2003-07-22

申请号：US09452174

申请日：1999-12-01

申请人： Tatehito Usui ,  Ken Yoshioka ,  Shoji Ikuhara ,  Kouji Nishihata ,  Kazue Takahashi ,  Tetsunori Kaji ,  Shigeru Nakamoto

发明人： Tatehito Usui ,  Ken Yoshioka ,  Shoji Ikuhara ,  Kouji Nishihata ,  Kazue Takahashi ,  Tetsunori Kaji ,  Shigeru Nakamoto

IPC分类号： H01L2166

CPC分类号： H01L21/76805 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76897 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： Etching end point judging method that includes the following steps in a dry etching end point judging method having a step of reducing noise of input signal waveforms using first digital filter, a step of obtaining a differential coefficient (primary or secondary) of a signal waveform from differential processing by operation circuit, a step of obtaining a smoothed differential coefficient value by reducing the noise components of the time series differential coefficient waveform that was obtained in the previous step, using the second digital filter, and a step of judging an etching end point by comparing the smoothed differential coefficient value and a preset value using discrimination method.

摘要翻译： 一种蚀刻终点判定方法，其特征在于，在具有使用第一数字滤波器降低输入信号波形的噪声的步骤的干式蚀刻终点判定方法中，具有以下步骤：获得信号波形的微分系数（初级或次级） 通过运算电路的差分处理，通过使用第二数字滤波器减少上一步骤中获得的时间序列差分系数波形的噪声分量来获得平滑的微分系数值的步骤，以及判断蚀刻终点 通过使用判别方法比较平滑的微分系数值和预设值。

公开(公告)号：US06373681B1

公开(公告)日：2002-04-16

申请号：US09833557

申请日：2001-04-13

申请人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

发明人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

IPC分类号： H02N1300

摘要： A sample processing method includes electrostatically attracting and holding a sample on an electrostatic chuck which includes a pair of electrodes having different polarities and being concentrically disposed, and a dielectric film formed on top surfaces of the pair of electrodes, by applying a DC voltage between the pair of electrodes. The sample which is attracted and held on the chuck through the dielectric film is subjected to plasma processing while applying a bias voltage. The application of the bias voltage applied during plasma processing is stopped after termination of processing the sample, and an unbalance between electric charges stored on attracting portions of the dielectric film formed on the electrodes is eliminated by continuing generation of the plasma for a specific time after stopping the application of the bias voltage. The plasma is extinguished after an elapse of the specific time.

公开(公告)号：US08940128B2

公开(公告)日：2015-01-27

申请号：US12853427

申请日：2010-08-10

申请人： Yusaku Sakka ,  Ryoji Nishio ,  Ken Yoshioka

发明人： Yusaku Sakka ,  Ryoji Nishio ,  Ken Yoshioka

IPC分类号： C23C16/505 ,  H01J37/32 ,  C23C16/507 ,  H05H1/46 ,  H05H1/36

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32651 ,  H05H2001/463

摘要： The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

摘要翻译： 本发明旨在抑制在真空处理室的内壁表面产生的自偏压，从而抑制真空处理室的内壁表面的碎裂或真空处理室的内部部分的消耗。 本发明提供一种等离子体处理装置，其包括真空处理室，密封真空处理室的上部的真空处理室盖，感应天线，设置在感应天线和真空处理室盖之间的法拉第屏蔽，以及 用于向感应天线提供高频电力的高频电源，其中感应天线被分成两部分或更多部分，法拉第屏蔽被分成对应于感应天线的分割数的分频数，高频电压是 通过匹配盒从一个高频电源施加到其上。

公开(公告)号：US20070184563A1

公开(公告)日：2007-08-09

申请号：US11735657

申请日：2007-04-16

申请人： Go Miya ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

发明人： Go Miya ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069

摘要： A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.

摘要翻译： 一种用于等离子体蚀刻装置的等离子体蚀刻方法，包括：处理室，用于对被处理物体进行等离子体蚀刻; 第一气体供应源; 第二气体供应源; 用于将处理气体引入处理室的第一气体入口; 用于将处理气体引入所述处理室的第二气体入口; 用于调节处理气体的流量的流量调节器; 以及用于将所述第一处理气体分成多个部分的气体分流器，其中所述第二处理气体与所述气体分流器和所述第一气体入口之间以及所述气体分流器和所述第二气体入口之间的至少一部分合并。

公开(公告)号：US06646233B2

公开(公告)日：2003-11-11

申请号：US10087747

申请日：2002-03-05

申请人： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

发明人： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

IPC分类号： F27B514

CPC分类号： H01L21/67109 ,  H01L21/6831

摘要： A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.

摘要翻译： 用于晶片处理装置的晶片台，其包括具有内置冷却剂液体循环路径的液体冷却套和附接到液体冷却套上的陶瓷板，并且其中具有用于静电卡盘的加热器和电极， 在将晶片安装在陶瓷板上的同时进行晶片处理的晶片台，其中液体冷却套管允许通过在液体冷却套上形成的冷却剂气体循环间隙来连接陶瓷板，同时设置在液体冷却套和陶瓷之间 在其上容纳多个耐热密封材料，其中包含用于密封冷却剂气体的弹性体。

公开(公告)号：US06245202B1

公开(公告)日：2001-06-12

申请号：US09155906

申请日：1998-10-08

申请人： Manabu Edamura ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburo Kanai

发明人： Manabu Edamura ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburo Kanai

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01L21/3065 ,  H05H1/46

摘要： In a high-frequency inductive plasma etching apparatus, a space between an antenna to which a high-frequency power is fed and a processing chamber is insulated with an insulating material having a suitable thickness, while the antenna is protected from a plasma or a reactive gas for plasma processing and the surface of a side in contact with the plasma is covered by an insulating material such as alumina and quartz. The insulating material and the antenna are placed in a vacuum. Since the processing chamber which contains the insulating material and the antenna can take a pressure differential with atmospheric pressure, all that is required of the insulating material is its capacity to take the plasma atmosphere. Consequently, the insulating material can be made thin and the plasma is generated uniformly in high density. Heat generated at the antenna is dissipated to the outside either by making a gap between the antenna and its surroundings as small as possible or by bringing the pressure of the gap closer to the pressure in the processing chamber. Alternatively, several Torr of a non-reactive heat-transfer promoting gas such as He gas may be introduced into fine gaps formed around the antenna to dissipate heat generated at the antenna.

摘要翻译： 在高频感应等离子体蚀刻装置中，馈送高频功率的天线与处理室之间的空间与具有适当厚度的绝缘材料绝缘，同时天线被保护免受等离子体或反应性 用于等离子体处理的气体和与等离子体接触的一侧的表面被绝缘材料如氧化铝和石英覆盖。 将绝缘材料和天线置于真空中。 由于包含绝缘材料和天线的处理室可以承受大气压力的压力差，所以绝缘材料所需要的就是其承受等离子体气氛的能力。 因此，可以使绝缘材料变薄，并且以高密度均匀地产生等离子体。 通过在天线及其周围环境之间尽可能小的间隙或通过使间隙的压力更接近处理室中的压力而将在天线处产生的热量散发到外部。 或者，可以将诸如He气体的非反应性热传递促进气体的几个Torr引入形成在天线周围的细小间隙中，以散发在天线处产生的热量。

公开(公告)号：US06180019B2

公开(公告)日：2001-01-30

申请号：US08979949

申请日：1997-11-26

申请人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

发明人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

IPC分类号： H05H102

CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/321

摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

摘要翻译： 通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。 法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除 等离子体点火后。 在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。