摘要:
A basic cell of the present invention comprises a plurality of wires which constitute a wiring route of 90°, one ends of the plurality of wires being on one of opposite sides, and the other ends of the plurality of wires being on the other one of the opposite sides, wherein: each of the one ends of the plurality of wires is point-symmetric to any of the other ends of the plurality of wires with respect to the center of the area of the basic cell; and routes of the plurality of wires do not cross one another.
摘要:
A basic cell of the present invention comprises a plurality of wires which constitute a wiring route of 90°, one ends of the wires being on one of opposite sides, and the other ends of the wires being on the other one of the opposite sides, wherein: each of the one ends of the wires is point-symmetric to any of the other ends of the wires with respect to the center of the area of the basic cell; and routes of the plurality of wires do not cross one another.
摘要:
A basic cell of the present invention comprises a plurality of wires which constitute a wiring route of 90°, one ends of the plurality of wires being on one of opposite sides, and the other ends of the plurality of wires being on the other one of the opposite sides, wherein: each of the one ends of the plurality of wires is point-symmetric to any of the other ends of the plurality of wires with respect to the center of the area of the basic cell; and routes of the plurality of wires do not cross one another.
摘要:
A basic cell of the present invention comprises a plurality of wires which constitute a wiring route of 90°, one ends of the plurality of wires being on one of opposite sides, and the other ends of the plurality of wires being on the other one of the opposite sides, wherein: each of the one ends of the plurality of wires is point-symmetric to any of the other ends of the plurality of wires with respect to the center of the area of the basic cell; and routes of the plurality of wires do not cross one another.
摘要:
A semiconductor integrated circuit device (10) is composed of an LSI function unit (11) and a shield wiring layer (22) formed on the unit. The LSI function unit (11) includes a semiconductor substrate (12) and a first insulating film (13), and the semiconductor substrate (12) is formed with a circuit element including, for example, a MOS transistor (14). The shield wiring layer (22) is composed of a lower shield line (23), a third insulating film (24), an upper shield line (25), and a fourth insulating film (26) sequentially stacked above a second insulating film (17). The directions in which the lower and upper shield lines (23) and (25) are arranged intersect each other.
摘要:
A semiconductor integrated circuit device (10) is composed of an LSI function unit (11) and a shield wiring layer (22) formed on the unit. The LSI function unit (11) includes a semiconductor substrate (12) and a first insulating film (13), and the semiconductor substrate (12) is formed with a circuit element including, for example, a MOS transistor (14). The shield wiring layer (22) is composed of a lower shield line (23), a third insulating film (24), an upper shield line (25), and a fourth insulating film (26) sequentially stacked above a second insulating film (17). The directions in which the lower and upper shield lines (23) and (25) are arranged intersect each other.
摘要:
An inverse temperature characteristic generating circuit decreases an output voltage Vout by a voltage VGS, and supplies the resultant voltage as a voltage VA to a temperature characteristic generating circuit. The temperature characteristic generating circuit includes a differential amplification circuit that receives a terminal voltage VAP between resistances R22 and R23 and an emitter voltage VAM of a bipolar transistor T21, and outputs a control signal VC. When the terminal voltages VAP and VAM are equal to each other, an operation of a circuit is stable. The temperature characteristic of the voltage VA during the stable operation, and the temperature characteristic of the voltage VGS are inverse to each other and therefore cancel each other, so that the constant voltage Vout independent of temperature is output. In addition, the output terminal is not connected via a resistance to a ground, so that low current consumption can be easily achieved.
摘要:
An inverse temperature characteristic generating circuit decreases an output voltage Vout by a voltage VGS, and supplies the resultant voltage as a voltage VA to a temperature characteristic generating circuit. The temperature characteristic generating circuit includes a differential amplification circuit that receives a terminal voltage VAP between resistances R22 and R23 and an emitter voltage VAM of a bipolar transistor T21, and outputs a control signal VC. When the terminal voltages VAP and VAM are equal to each other, an operation of a circuit is stable. The temperature characteristic of the voltage VA during the stable operation, and the temperature characteristic of the voltage VGS are inverse to each other and therefore cancel each other, so that the constant voltage Vout independent of temperature is output. In addition, the output terminal is not connected via a resistance to a ground, so that low current consumption can be easily achieved.
摘要:
A receiver includes an automatic gain control (AGC) loop and a filter group that is arranged downstream of the AGC loop. The filter group includes an active filter. The receiver further includes a power difference detector and a switch circuit. The power difference detector detects a power difference between intermediate and output nodes of the filter group to detect presence of an interference wave that is different from a desired wave and that has a frequency near that of the desired wave. The switch circuit switches an operation to suppress a convergence power of the AGC loop when the power difference detector detects the interference wave.
摘要:
The ferroelectric memory apparatus stores data, and includes: a ferroelectric memory element; a temperature sensor which detects a temperature of the apparatus; a control unit that outputs a control signal indicating a voltage, the voltage increasing as the temperature detected by the temperature sensor decreases; and a voltage generating unit that generates the voltage indicated by the control signal outputted by the control unit, and to supply the generated voltage to the ferroelectric memory element. This provides a ferroelectric memory apparatus which can recover from effects of thermal stress suffered after shipment—i.e., reduction in the polarization amount needed for data retention as well as imprint degradation—using a relatively simple configuration.