公开(公告)号：US5759426A

公开(公告)日：1998-06-02

申请号：US558540

申请日：1995-11-16

申请人： Norihiro Kobayashi ,  Kazuo Mamada ,  Yuichi Matsumoto ,  Satoshi Oka ,  Masatake Katayama

发明人： Norihiro Kobayashi ,  Kazuo Mamada ,  Yuichi Matsumoto ,  Satoshi Oka ,  Masatake Katayama

IPC分类号： H01L21/22 ,  H01L21/31 ,  H01L21/673 ,  H01L21/302

CPC分类号： C04B41/87 ,  C04B41/5066 ,  C04B41/52 ,  C04B41/89 ,  C30B35/00

摘要： A silicon nitride layer 12b is thermally grown on the topmost surface of the heat treatment jig 12 composed of silicon or silicon carbide in a nitrogen ambience. The silicon nitride layer 12b is thermally grown in a nitrogen ambience in the temperature range of 1,100.degree. C.-1,300.degree. C. It is desirable to remove slightly the surface of the jig by, for example, hydrogen etching before thermally growing the silicon nitride layer 12b. After the etching, a silicon oxide layer can be thermally grown on the jig surface in an oxygen ambience before thermally growing the silicon nitride layer 12b.

摘要翻译： 氮化硅层12b在氮气氛中由硅或碳化硅构成的热处理夹具12的最上表面热生长。 氮化硅层12b在1100℃-1300℃的温度范围内在氮气气氛中热生长。期望通过例如在将氮化硅热生长之前的氢蚀刻稍微去除夹具的表面 层12b。 在蚀刻之后，在氧化氮化物层12b热生长之前，可以在氧气氛中在夹具表面上热生长氧化硅层。

公开(公告)号：US6139625A

公开(公告)日：2000-10-31

申请号：US264099

申请日：1999-03-08

申请人： Masaro Tamatsuka ,  Norihiro Kobayashi ,  Satoshi Oka

发明人： Masaro Tamatsuka ,  Norihiro Kobayashi ,  Satoshi Oka

IPC分类号： C30B15/00 ,  C30B33/00 ,  C30B15/04

CPC分类号： C30B29/06 ,  C30B15/206 ,  C30B33/00

摘要： There is disclosed a method of producing a silicon single crystal wafer wherein a silicon single crystal ingot in which nitrogen is doped is grown by Czochralski method, the single crystal ingot is sliced to yield a silicon single crystal wafer, and then the silicon single crystal wafer is subjected to heat treatment with a rapid heating/rapid cooling apparatus, and the silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wherein growth of crystal defects (grown-in defects) in silicon single crystal produced by CZ method are suppressed, particularly growth of crystal defects are prevented in the surface layer of the wafer, and crystal defect can be surely removed by a short time heat treatment even if small crystal defects are generated.

摘要翻译： 公开了通过Czochralski法生长其中掺杂有氮的硅单晶锭的硅单晶晶片的制造方法，将单晶锭切片以产生硅单晶晶片，然后将硅单晶晶片 通过快速加热/快速冷却装置和通过该方法制造的硅单晶晶片进行热处理。 可以提供一种制造硅单晶的方法，其中抑制了通过CZ法制造的硅单晶中的晶体缺陷（生长缺陷）的生长，特别是在晶片的表面层中防止了晶体缺陷的生长， 即使产生小的晶体缺陷，也可以通过短时间的热处理来确定地去除晶体缺陷。

公开(公告)号：US20120326268A1

公开(公告)日：2012-12-27

申请号：US13582614

申请日：2011-03-01

申请人： Masahiro Kato ,  Satoshi Oka ,  Norihiro Kobayashi ,  Tohru Ishizuka ,  Nobuhiko Noto

发明人： Masahiro Kato ,  Satoshi Oka ,  Norihiro Kobayashi ,  Tohru Ishizuka ,  Nobuhiko Noto

IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/762 ,  H01L29/02

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/76254 ,  H01L29/78603

摘要： A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle Φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle Φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×1019/cm3. Even when an epitaxial layer having a dopant concentration of 1×1019/cm3 or more is formed on the main surface of the silicon single crystal substrate, stripe-shaped surface irregularities on the epitaxial layer are inhibited.

摘要翻译： 一种硅外延片，其具有在硅单晶衬底的主表面上通过气相外延生长的硅外延层，其中所述硅单晶衬底的主表面相对于[100]轴以角度倾斜; 在（100）面的[011]方向或[0-1-1]方向上，在（100）面的[01-1]方向或[0-11]方向上的角度Φ处， 角度和角度 角度Φ小于10分钟，硅外延层的掺杂剂浓度为1×1019 / cm3以上。 即使在硅单晶衬底的主表面上形成掺杂浓度为1×1019 / cm3以上的外延层，也抑制了外延层上的条状表面凹凸。

公开(公告)号：US06531416B1

公开(公告)日：2003-03-11

申请号：US09178179

申请日：1998-10-23

申请人： Norihiro Kobayashi ,  Toshihiko Miyano ,  Satoshi Oka

发明人： Norihiro Kobayashi ,  Toshihiko Miyano ,  Satoshi Oka

IPC分类号： H01L21324

CPC分类号： H01L21/3225 ,  Y10S438/974

摘要： A method for heat treatment of a silicon wafer in a reducing atmosphere through use of a rapid thermal annealer (RTA) is provided. In the method, the silicon wafer is heat-treated at a temperature of 1150° C. to 1300° C. for 1 sec to 60 sec in a mixture gas atmosphere of hydrogen and argon. Hydrogen is present in the mixture gas atmosphere in an amount of 10% to 80% by volume. Hydrogen is preferably present in the mixture gas atmosphere in an amount of 20% to 40% by volume. The method decreases COP density on the surface of the silicon wafer to thereby improve electrical characteristics, such as TZDB and TDDB, of the silicon wafer, suppresses the generation of slip dislocation to thereby prevent wafer breakage, and utilizes intrinsic advantages of the RTA, such as improvement in productivity and reduction in hydrogen gas usage.

摘要翻译： 提供了一种通过使用快速热退火炉（RTA）在还原气氛中对硅晶片进行热处理的方法。 在该方法中，在氢气和氩气的混合气体气氛中，将硅晶片在1150℃至1300℃的温度下热处理1秒至60秒。 氢气以10〜80体积％的量存在于混合气体气氛中。 氢气优选以混合气体气氛中的20〜40体积％的量存在。 该方法降低硅晶片表面的COP密度，从而提高硅晶片的TZDB，TDDB等电特性，抑制滑移位错的产生，防止晶片断裂，并利用RTA的固有优点， 作为生产率的提高和氢气使用量的减少。

公开(公告)号：US08823130B2

公开(公告)日：2014-09-02

申请号：US13582614

申请日：2011-03-01

申请人： Masahiro Kato ,  Satoshi Oka ,  Norihiro Kobayashi ,  Tohru Ishizuka ,  Nobuhiko Noto

发明人： Masahiro Kato ,  Satoshi Oka ,  Norihiro Kobayashi ,  Tohru Ishizuka ,  Nobuhiko Noto

IPC分类号： H01L21/70 ,  H01L21/02 ,  H01L21/762 ,  H01L29/786

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/76254 ,  H01L29/78603

摘要： A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×1019/cm3. Even when an epitaxial layer having a dopant concentration of 1×1019/cm3 or more is formed on the main surface of the silicon single crystal substrate, stripe-shaped surface irregularities on the epitaxial layer are inhibited.

摘要翻译： 一种硅外延片，其具有在硅单晶衬底的主表面上通过气相外延生长的硅外延层，其中所述硅单晶衬底的主表面相对于[100]轴以角度倾斜; 在（011）方向或[0-1-1]方向上，以（100） 在（100）平面的[01-1]方向或[0-11]方向上，角度＆amp; 和角度＆phgr 小于10分钟，硅外延层的掺杂浓度等于或大于1×1019 / cm3。 即使在硅单晶衬底的主表面上形成掺杂浓度为1×1019 / cm3以上的外延层，也抑制了外延层上的条状表面凹凸。

公开(公告)号：US06403502B1

公开(公告)日：2002-06-11

申请号：US09046996

申请日：1998-03-24

申请人： Norihiro Kobayashi ,  Satoshi Oka ,  Takao Abe

发明人： Norihiro Kobayashi ,  Satoshi Oka ,  Takao Abe

IPC分类号： H01L21324

CPC分类号： H01L21/3225 ,  Y10S438/905

摘要： There is disclosed a heat treatment method for a silicon wafer in which the silicon wafer is heat treated in a reducing atmosphere through use of a rapid heating/rapid cooling apparatus. The silicon wafer is heat treated for a period of 1 to 60 seconds at a temperature in the range of 1200° C. to the melting temperature of silicon. The heat treatment method can reduce the density of COPs and micro-defects which serve as nuclei of oxidation induced stacking faults at the surface of the silicon wafer.

摘要翻译： 公开了通过使用快速加热/快速冷却装置在还原气氛中对硅晶片进行热处理的硅晶片的热处理方法。 将硅晶片在1200℃的温度下对硅的熔融温度进行1〜60秒的时间热处理。 热处理方法可以降低作为硅晶片表面的氧化诱导堆垛层错核的COP和微缺陷的密度。

公开(公告)号：US20130102126A1

公开(公告)日：2013-04-25

申请号：US13699118

申请日：2011-04-21

申请人： Hiroji Aga ,  Satoshi Oka ,  Nobuhiko Noto

发明人： Hiroji Aga ,  Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/265

CPC分类号： H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/76254

摘要： A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer is used as the bond wafer where the region to form the ion-implanted layer has a resistivity of 0.2 Ωcm or less, the ion-implanted layer is formed where the ion dose for forming the layer is 4×1016/cm2 or less, and the flattening heat treatment is performed in an atmosphere including HCl gas. Therefore, a method for manufacturing a bonded wafer having a low resistivity thin film (SOI layer) that contains dopant, such as boron, with high concentration according to the ion-implantation delamination method, where outward diffusion of dopant and suction due to oxidation can be inhibited to maintain low resistivity.

摘要翻译： 一种用于制造接合晶片的方法，包括：在接合晶片中形成离子注入层，将接合晶片接合到基底晶片，在离子注入层分层接合晶片，以及在表面之后进行平坦化热处理 分层，其中使用硅单晶晶片作为形成离子注入层的区域的电阻率为0.2Ω·米或更小的接合晶片，形成离子注入层，其中用于形成层的离子剂量为 4×10 16 / cm 2以下，扁平化热处理在含有HCl气体的气氛中进行。 因此，根据离子注入脱层法，具有含有高掺杂剂等硼等掺杂剂的低电阻薄膜（SOI层）的接合晶片的制造方法，其中掺杂剂的向外扩散和由于氧化引起的抽吸可以 被抑制以维持低电阻率。

公开(公告)号：US08497187B2

公开(公告)日：2013-07-30

申请号：US13055829

申请日：2009-07-29

申请人： Satoshi Oka ,  Susumu Kuwabara

发明人： Satoshi Oka ,  Susumu Kuwabara

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide.

摘要翻译： 根据本发明，提供一种制造SOI晶片的方法，该方法被配置为在BOX层上具有SOI层的SOI晶片的SOI层上生长外延层，以增加SOI层的厚度， 其中通过使用在800nm至1300nm的红外波长范围内的红外反射率在其外延层生长的SOI晶片的20％至40％的范围内的SOI晶片来进行外延生长。 结果，具有较小滑移位错的高品质SOI晶片等可以以低成本提供优异的生产率，因为包括通过生长外延层而增加厚度的SOI层的SOI晶片及其制造方法可以 也提供。

公开(公告)号：US08389382B2

公开(公告)日：2013-03-05

申请号：US13130681

申请日：2009-10-15

申请人： Satoshi Oka ,  Nobuhiko Noto

发明人： Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： A method for manufacturing a bonded wafer including the steps of: implanting at least one gas ion of a hydrogen ion and a rare gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an oxide film; thereafter delaminating the bond wafer at the ion-implanted layer to prepare the bonded wafer having a silicon thin film formed on the base wafer; and performing a flattening heat treatment on the bonded wafer under an atmosphere containing hydrogen or hydrogen chloride, wherein a dopant gas is added into the atmosphere of the flattening heat treatment to perform the heat treatment, the dopant gas having the same conductivity type as a dopant contained in the silicon thin film.

摘要翻译： 一种用于制造接合晶片的方法，包括以下步骤：从其表面将至少一种氢离子和稀有气体离子的气体离子注入接合晶片以形成离子注入层; 将接合晶片的离子注入表面直接或通过氧化膜键合到基底晶片的表面; 然后在离子注入层分层接合晶片，以制备在基底晶片上形成有硅薄膜的接合晶片; 在包含氢或氯化氢的气氛下，在接合晶片上进行平坦化的热处理，其中在平坦化热处理的气氛中加入掺杂气体进行热处理，掺杂气体具有与掺杂剂相同的导电类型 包含在硅薄膜中。

公开(公告)号：US20090258474A1

公开(公告)日：2009-10-15

申请号：US12379938

申请日：2009-03-04

申请人： Satoshi Oka ,  Nobuhiko Noto

发明人： Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/762 ,  H01L21/302

CPC分类号： H01L21/76254 ,  H01L21/3065

摘要： Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate.

摘要翻译： 提供一种制造具有厚膜SOI层的SOI衬底的方法，其中通过将至少一种氢离子和稀有气体离子的离子注入到接合晶片的表面中形成离子注入层， 通过在接合晶片的离子注入表面和基底晶片的表面经由氧化物膜接合在一起之后，沿着离子注入层使接合晶片分层，制造具有SOI层的SOI衬底，热处理为 在含有氢或含有氯化氢气体的气氛的还原气氛中在具有SOI层的SOI衬底上进行SOI SOI层的SOI表面的SOI外延生长后，在SOI的SOI层上生长硅外延层 基质。