公开(公告)号：US08497187B2

公开(公告)日：2013-07-30

申请号：US13055829

申请日：2009-07-29

申请人： Satoshi Oka ,  Susumu Kuwabara

发明人： Satoshi Oka ,  Susumu Kuwabara

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide.

摘要翻译： 根据本发明，提供一种制造SOI晶片的方法，该方法被配置为在BOX层上具有SOI层的SOI晶片的SOI层上生长外延层，以增加SOI层的厚度， 其中通过使用在800nm至1300nm的红外波长范围内的红外反射率在其外延层生长的SOI晶片的20％至40％的范围内的SOI晶片来进行外延生长。 结果，具有较小滑移位错的高品质SOI晶片等可以以低成本提供优异的生产率，因为包括通过生长外延层而增加厚度的SOI层的SOI晶片及其制造方法可以 也提供。

公开(公告)号：US20110117727A1

公开(公告)日：2011-05-19

申请号：US13055829

申请日：2009-07-29

申请人： Satoshi Oka ,  Susumu Kuwabara

发明人： Satoshi Oka ,  Susumu Kuwabara

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide.

摘要翻译： 根据本发明，提供一种制造SOI晶片的方法，该方法被配置为在BOX层上具有SOI层的SOI晶片的SOI层上生长外延层，以增加SOI层的厚度， 其中通过使用在800nm至1300nm的红外波长范围内的红外反射率在其外延层生长的SOI晶片的20％至40％的范围内的SOI晶片来进行外延生长。 结果，具有较小滑移位错的高品质SOI晶片等可以以低成本提供优异的生产率，因为包括通过生长外延层而增加厚度的SOI层的SOI晶片及其制造方法可以 也提供。

公开(公告)号：US08311771B2

公开(公告)日：2012-11-13

申请号：US13262050

申请日：2010-04-05

申请人： Susumu Kuwabara

发明人： Susumu Kuwabara

IPC分类号： G01B11/02 ,  G02F1/00 ,  G06F19/00 ,  G06F17/40 ,  H05K13/08

CPC分类号： H01L22/12 ,  G01B11/0625 ,  G01N21/9501

摘要： An inspection method of an SOI wafer in which profiles P1 and P2 are calculated in the SOI wafer to be inspected and in an SOI wafer having a film thickness of the SOI layer thicker or thinner than that of the SOI wafer to be inspected, respectively; a profile P3 of a difference between P1 and P2, or a profile P4 of a change ratio of P1 and P2 is calculated; light having the wavelength band selected on the basis of a maximum peak wavelength within the calculated profiles P3 or P4 is irradiated to the surface of the SOI wafer to be inspected, to detect the reflected-light from the SOI wafer; and a place of a peak generated by an increase in reflection intensity of the detected reflected-light is found, as the defect caused by the change in the film thickness of the SOI layer.

摘要翻译： 分别在要检查的SOI晶片中计算出轮廓P1和P2的SOI晶片的检查方法以及SOI层的膜厚度分别比待检查的SOI晶片的厚度更薄或更薄的SOI晶片; 计算P1和P2之间的差的轮廓P3或P1和P2的变化比的轮廓P4; 将基于计算出的轮廓P3或P4内的最大峰值波长选择的波长带的光照射到待检查的SOI晶片的表面，以检测来自SOI晶片的反射光; 作为由SOI层的膜厚的变化引起的缺陷，发现通过检测出的反射光的反射强度的增加而产生的峰值的位置。

公开(公告)号：US07176102B2

公开(公告)日：2007-02-13

申请号：US10948234

申请日：2004-09-24

申请人： Hiroji Aga ,  Naota Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Naota Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.

摘要翻译： 一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤 微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理 加工型炉。 优选地，首先进行RTA装置的热处理。 通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

公开(公告)号：US06720640B2

公开(公告)日：2004-04-13

申请号：US10447103

申请日：2003-05-29

申请人： Susumu Kuwabara ,  Kiyoshi Mitani ,  Naoto Tate ,  Masatake Nakano ,  Thierry Barge ,  Christophe Maleville

发明人： Susumu Kuwabara ,  Kiyoshi Mitani ,  Naoto Tate ,  Masatake Nakano ,  Thierry Barge ,  Christophe Maleville

IPC分类号： H01L2906

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L22/34 ,  Y10S438/906 ,  Y10S438/974 ,  Y10S438/977

摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.

摘要翻译： 在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后， 晶圆被抛光。 具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。 或者，对剥离后的晶片进行热处理，然后进行抛光。 提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高品质再生晶片，以及这种再生晶片。

公开(公告)号：US08976369B2

公开(公告)日：2015-03-10

申请号：US13696947

申请日：2011-03-29

申请人： Susumu Kuwabara

发明人： Susumu Kuwabara

IPC分类号： G01B11/28 ,  G01N21/86 ,  G01V8/00 ,  G01B11/06 ,  H01L21/66

CPC分类号： G01B11/06 ,  G01B11/0633 ,  H01L22/12

摘要： A method for evaluating a thin-film-formed wafer, being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate, wherein light having a single wavelength λ is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution. The method enables a film thickness distribution of the micro thin film (an SOI layer) that affects a device to be measured on the entire wafer surface at a low cost with a sufficient spatial resolution in a simplified manner.

摘要翻译： 一种用于评价薄膜形成晶片的方法，被配置为计算在基板表面上具有薄膜的薄膜形成晶片的薄膜的膜厚分布，其中具有单一波长λ 被施加到薄膜形成的晶片的表面的部分区域，检测来自该区域的反射光，测量通过将该区域分割成多个而获得的每个像素的反射光强度，将反射光强度分布在 区域，并且根据反射光强度分布计算该区域中的薄膜的膜厚分布。 该方法能够以简单的方式以足够的空间分辨率以低成本影响在整个晶片表面上测量的器件的微薄膜（SOI层）的膜厚分布。

公开(公告)号：US20130063733A1

公开(公告)日：2013-03-14

申请号：US13696947

申请日：2011-03-29

申请人： Susumu Kuwabara

发明人： Susumu Kuwabara

IPC分类号： G01B11/06

CPC分类号： G01B11/06 ,  G01B11/0633 ,  H01L22/12

摘要： A method for evaluating a thin-film-formed wafer, being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate, wherein light having a single wavelength λ is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution. The method enables a film thickness distribution of the micro thin film (an SOI layer) that affects a device to be measured on the entire wafer surface at a low cost with a sufficient spatial resolution in a simplified manner.

公开(公告)号：US06846718B1

公开(公告)日：2005-01-25

申请号：US09857803

申请日：2000-10-13

申请人： Hiroji Aga ,  Naoto Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Naoto Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.

摘要翻译： 一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤 微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理 加工型炉。 优选地，首先进行RTA装置的热处理。 通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

公开(公告)号：US08741741B2

公开(公告)日：2014-06-03

申请号：US13576889

申请日：2011-02-03

申请人： Susumu Kuwabara

发明人： Susumu Kuwabara

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76251

摘要： A method for manufacturing an SOI wafer that has an SOI layer formed on a buried insulator layer and is suitable for photolithography with an exposure light having a wavelength λ comprises: designing a thickness of the buried insulator layer of the SOI wafer on the basis of the wavelength λ of the exposure light utilized for the photolithography that is to be performed on the SOI wafer after manufacturing; and fabricating the SOI wafer that has the SOI layer formed on the buried insulator layer having the designed thickness. As a result, there is provided a method for designing an SOI wafer and a method for manufacturing an SOI wafer that enable the variation in the reflection rate of the exposure light due to the variation in the SOI layer thickness and hence variation in the exposure state of a resist to be inhibited in a photolithography operation.

摘要翻译： 一种SOI掩模的制造方法，其具有形成在掩埋绝缘体层上并适用于具有波长λ的曝光光的光刻的SOI层，其特征在于，基于所述SOI晶片的掩埋绝缘体层的厚度， 用于制造后在SOI晶片上进行的光刻的曝光光的波长λ; 以及制造具有形成在具有设计厚度的掩埋绝缘体层上的SOI层的SOI晶片。 结果，提供了一种用于设计SOI晶片的方法和用于制造SOI晶片的方法，其能够使由于SOI层厚度的变化引起的曝光光的反射率的变化，并且因此曝光状态的变化 在光刻操作中被抑制的抗蚀剂。

公开(公告)号：US20140027633A1

公开(公告)日：2014-01-30

申请号：US14009182

申请日：2012-04-11

申请人： Susumu Kuwabara

发明人： Susumu Kuwabara

IPC分类号： G01B15/02

CPC分类号： G01B15/02 ,  G01B15/025 ,  G01N23/2252 ,  G01N2223/6116 ,  H01L21/7624 ,  H01L22/12

摘要： A method for measuring a film thickness of an SOI layer of an SOI wafer including at least an insulator layer and the SOI layer which is formed on the insulator layer and is formed of a silicon single crystal, wherein a surface of the SOT layer is irradiated with an electron beam, characteristic X-rays are detected from a side of the SOI layer surface irradiated with the electron beam, the characteristic X-rays being generated by exciting a specific element in the insulator layer with the electron beam that has passed through the SOI layer and has been attenuated in the SOI layer, and the film thickness of the SOI layer is calculated on the basis of an intensity of the detected characteristic X-rays.

摘要翻译： 一种用于测量SOI晶片的SOI层的膜厚的方法，所述SOI晶片至少包括绝缘体层和形成在绝缘体层上并由硅单晶形成的SOI层，其中SOT层的表面被照射 利用电子束，从被电子束照射的SOI层表面的一侧检测特征X射线，通过用已经通过电子束的电子束激发绝缘体层中的特定元素来产生特征X射线 SOI层，并且在SOI层中已被衰减，并且基于检测到的特征X射线的强度来计算SOI层的膜厚度。