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公开(公告)号：US07011717B2
公开(公告)日：2006-03-14
申请号：US10929480
申请日：2004-08-31
IPC分类号： H01L31/036
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1–60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 μm from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译： 根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度 热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从 控制到700℃的热处理的最高温度为20℃/秒以下，晶体缺陷密度为1.0×4×4×缺陷/ cm 2的硅晶片 在晶片本体部分中> 3 <或更多，在深度的晶片表面层中的晶体缺陷密度为1.0×4×4×3/3或更小 0.5μm以下的晶体缺陷密度为0.15个/ cm 2以下 在P-V值方面为1.0nm以下的表面粗糙度。 通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。
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公开(公告)号：US20050025691A1
公开(公告)日：2005-02-03
申请号：US10929480
申请日：2004-08-31
IPC分类号： H01L21/322 , C01B33/02
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 μm from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译： 根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度 热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从 在700℃的热处理中的最高温度被控制在20℃/秒以下，并且在a的情况下，晶体缺陷密度为1.0×10 4缺陷/ cm 3以上的硅晶片 晶片本体部分，表面0.5μm深的晶片表面层中的晶体缺陷密度为1.0×10 4缺陷/ cm 3或更小，晶体缺陷密度为0.15缺陷/ cm 2或 较少在晶圆表面和表面粗糙度1 在P-V值方面为0.0nm以下。 通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。
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公开(公告)号：US06809015B2
公开(公告)日：2004-10-26
申请号：US10338726
申请日：2003-01-09
IPC分类号： H01L2124
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 &mgr;m from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译： 根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度 热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从 在700℃的热处理中的最高温度被控制在20℃/秒以下，并且在a的情况下，晶体缺陷密度为1.0×10 4缺陷/ cm 3以上的硅晶片 晶片本体部分，表面0.5μm深的晶片表面层中的晶体缺陷密度为1.0×10 4缺陷/ cm 3或更小，晶体缺陷密度为0.15缺陷/ cm 2或 较少在晶圆表面和表面粗糙度1 在P-V值方面为0.0nm以下。 通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。
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公开(公告)号：US06573159B1
公开(公告)日：2003-06-03
申请号：US09622203
申请日：2000-08-14
IPC分类号： H01L2124
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 &mgr;m from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译： 根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度 热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从 控制到700℃的热处理的最高温度为20℃/秒以下，在晶片本体部分中的晶体缺陷密度为1.0×10 4个/ cm 3以上的硅晶片，晶体 表面0.5μm深的晶片表面层的缺陷密度为1.0×10 4个/ cm3以下，晶片表面的晶体缺陷密度为0.15个/ cm 2以下，表面粗糙度为1.0nm或l 在P-V值方面。 通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。
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公开(公告)号：US06670261B2
公开(公告)日：2003-12-30
申请号：US09979717
申请日：2001-11-28
IPC分类号： H01L21425
CPC分类号： H01L21/324 , H01L21/02052 , H01L21/3225 , Y10S438/906
摘要： There is provided a manufacturing process for an annealed wafer capable of reducing boron contamination occurring while annealing is performed in a state where a wafer surface after cleaning is exposed to a gas in Ar atmosphere to suppress a change in resistivity due to an increase in a boron concentration in the vicinity of the wafer surface after annealing and manufacture an annealed wafer in which a difference in a boron concentration between a surface layer portion thereof and a bulk portion thereof is essentially not a problem even if a silicon wafer having a comparative low boron concentration (1×1016 atoms/cm3 or less) is used as the annealed wafer. The manufacturing process for an annealed wafer comprises: cleaning a silicon wafer; and loading the silicon wafer into a heat treatment furnace to heat-treat the silicon wafer in an Ar atmosphere, wherein an aqueous solution including hydrofluoric acid is used as a final cleaning liquid in the cleaning.
摘要翻译： 提供了一种用于退火晶片的制造方法，其能够在将清洁后的晶片表面暴露于Ar气氛中的气体的状态下进行退火的同时进行退火，以抑制由于硼的增加导致的电阻率变化 退火后的晶片表面附近的浓度，制造退火晶片，其中表面层部分和其主体部分之间的硼浓度差异基本上不成问题，即使具有比较低的硼浓度的硅晶片 （1×10 16原子/ cm 3以下）用作退火晶片。 退火晶片的制造方法包括：清洗硅晶片; 并将硅晶片加载到热处理炉中以在Ar气氛中对硅晶片进行加热处理，其中使用包含氢氟酸的水溶液作为清洗中的最终清洗液。
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6.发明授权公开(公告)号：US06413310B1
公开(公告)日：2002-07-02
申请号：US09529869
申请日：2000-04-20
IPC分类号： C21D100
CPC分类号： C30B29/06 , C30B33/02 , H01L21/3225 , Y10S117/906 , Y10T428/12674
摘要： Silicon single crystal wafers for semiconductor devices of high quality are obtained with high productivity by effectively reducing or eliminating grown-in defects in surface layers of silicon single crystal wafers produced by the CZ method. The present invention provides a method for producing a silicon single crystal wafer, which comprises growing a silicon single crystal ingot by the Czochralski method, slicing the single crystal ingot into a wafer, subjecting the wafer to a heat treatment at a temperature of 1100-1300° C. for 1 minute or more under a non-oxidative atmosphere, and successively subjecting the wafer to a heat treatment at a temperature of 700-1300° C. for 1 minute or more under an oxidative atmosphere without cooling the wafer to a temperature lower than 700° C. The present invention also provides a CZ silicon single crystal wafer, wherein density of COPs having a size of 0.09 &mgr;m or more in a surface layer having a thickness of up to 5 &mgr;m from a surface is 1.3 COPs/cm2 or less, and density of COPs having a size of 0.09 &mgr;m or more in a bulk portion other than the surface layer is larger than the density of COPs of the surface layer.
摘要翻译： 通过有效地减少或消除由CZ方法生产的硅单晶晶片的表面层中的生长缺陷，以高生产率获得高质量的半导体器件的硅单晶晶片。 本发明提供了一种硅单晶晶片的制造方法，其包括通过切克劳斯基法（Czochralski method）生长硅单晶锭，将单晶锭切割成晶片，使晶片在1100-1300℃的温度下进行热处理 在非氧化性气氛下保持1分钟以上，并且在氧化气氛下依次使晶片在700-1300℃的温度下进行1分钟以上的热处理，而不将晶片冷却至温度 本发明还提供了一种CZ硅单晶晶片，其中表面层中具有0.09μm或更大的厚度的COP的密度从表面至多为5μm的浓度为1.3个COPs / cm 2 在表面层以外的本体部分中，具有0.09μm以上的尺寸的COP的密度大于表层的COP的密度。
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公开(公告)号：US06878645B2
公开(公告)日：2005-04-12
申请号：US10332576
申请日：2001-07-06
IPC分类号： H01L21/205 , H01L21/322 , H01L21/324 , H01L21/26 , H01L21/42 , H01L21/477
CPC分类号： H01L21/3247 , H01L21/3225 , H01L21/324
摘要： Provided is a process for manufacturing a silicon wafer employing heat treatment which is applied on the silicon wafer in inert gas atmosphere represented by Ar annealing to annihilate Grown-in defects in a surface layer region of the silicon wafer as well as to cause no degradation of haze and micro-roughness on a surface thereof. In a process for manufacturing a silicon wafer having a step of heat treating the silicon wafer in inert gas atmosphere, using a purge box with which the silicon wafer heat treated in the inert gas atmosphere can be unloaded to outside a reaction tube of a heat treatment furnace without being put into contact with the open air, the purge box is filled with mixed gas of nitrogen and oxygen or 100% oxygen gas, and the heat treated silicon wafer is unloaded into the purge box.
摘要翻译： 提供一种使用热处理制造硅晶片的方法，该硅晶片在由Ar退火表示的惰性气体气氛中施加在硅晶片上，以消除硅晶片的表面层区域中的生长缺陷，并且不会导致 在其表面上的雾度和微观粗糙度。 在制造具有在惰性气体气氛中对硅晶片进行热处理的步骤的硅晶片的制造方法中，使用在惰性气体气氛中进行了热处理的硅晶片能够在热处理反应管外排出的清洗箱 在不与露天接触的情况下，将氮气和氧气或100％氧气的混合气体充满净化箱，将热处理后的硅晶片卸载到净化箱中。
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公开(公告)号：US07189293B2
公开(公告)日：2007-03-13
申请号：US10482099
申请日：2002-06-25
申请人： Norihiro Kobayashi , Masaro Tamatsuka , Takatoshi Nagoya , Wei Feig Qu , Hiroshi Takeno , Ken Aihara
发明人： Norihiro Kobayashi , Masaro Tamatsuka , Takatoshi Nagoya , Wei Feig Qu , Hiroshi Takeno , Ken Aihara
IPC分类号： C30B33/02
CPC分类号： H01L21/324 , C30B29/06 , C30B33/00 , H01L21/3225
摘要： The present invention is a method of producing an annealed wafer wherein a silicon single crystal wafer having a diameter of 200 mm or more produced by the Czochralski (CZ) method is subjected to a high temperature heat treatment in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100–1350° C. for 10–600 minutes, and before the high temperature heat treatmen, a pre-annealing is performed at a temperature less than the temperature of the high temperature heat treatment, so that the growth of slip dislocations is suppressed by growing oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein the generation and growth of slip dislocations generated in a high temperature heat treatment are suppressed and the defect density in the wafer surface layer is lowered even in the case of a silicon single crystal wafer having a large diameter of 200 mm or more, and the annealed wafer.
摘要翻译： 本发明是一种退火晶片的制造方法，其中通过Czochralski（CZ）方法制造的直径为200mm以上的硅单晶晶片在氩气气氛中进行高温热处理， 氢气或其混合气体在1100-1350℃的温度下进行10-600分钟，在高温热处理之前，在低于高温热的温度下进行预退火 从而通过生长氧化物沉淀物来抑制滑移位错的生长。 因此，提供了一种制造退火晶片的方法，其中抑制了在高温热处理中产生的滑移位错的产生和生长，并且即使在硅单晶晶片的情况下晶片表面层中的缺陷密度也降低 具有大直径为200mm以上的退火晶片。
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公开(公告)号：US07147711B2
公开(公告)日：2006-12-12
申请号：US10380818
申请日：2001-09-14
IPC分类号： C30B15/14
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225
摘要： The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less, and a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 8 ppma or less and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment to form an oxide precipitate layer in a bulk portion of the wafer, as well as silicon wafers produced by these production methods. Thus, there is provided a DZ-IG silicon wafer in which a DZ layer of high quality is formed, and which can maintain high resistivity even if the wafer is subjected to a heat treatment for device production.
摘要翻译： 本发明提供一种硅晶片的制造方法，其特征在于，使用Czochralski法生长电阻率为100Ω·cm以上，初始间隙氧浓度为10〜25ppma的硅单晶锭， 将硅单晶锭加工成晶片，并对晶片进行热处理，使得晶片中的残余间隙氧浓度应变为8ppma以下，以及制造硅晶片的方法，其包括生长硅单晶 具有100Ω·cm以上的电阻率和8ppma以下的初始间隙氧浓度并通过切克劳斯基法掺杂氮气的晶体锭，将硅单晶锭加工成晶片，并对晶片进行热处理 以在晶片的主体部分中形成氧化物沉淀层，以及通过这些制造方法制造的硅晶片。 因此，提供了一种DZ-IG硅晶片，其中形成了高质量的DZ层，并且即使对晶片进行用于器件制造的热处理也可以保持高电阻率。
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公开(公告)号：US06805743B2
公开(公告)日：2004-10-19
申请号：US10333970
申请日：2003-01-24
IPC分类号： C30B2502
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225
摘要： According to the present invention, there are provided a method for producing a silicon single crystal wafer which contains oxygen induced defects by subjecting a silicon single crystal wafer containing interstitial oxygen to a heat treatment wherein the heat treatment includes at least a step of performing a heat treatment using a resistance-heating type heat treatment furnace and a step of performing a heat treatment using a rapid heating and rapid cooling apparatus, and a silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wafer which has a DZ layer of higher quality compared with a conventional wafer in a wafer surface layer part and has oxygen induced defects at a sufficient density in a bulk part and the silicon single crystal wafer.
摘要翻译： 根据本发明，提供了一种通过对含有间隙氧的硅单晶晶片进行热处理而含有氧诱发缺陷的硅单晶晶片的制造方法，其中，热处理至少包括进行热处理的步骤 使用电阻加热型热处理炉的处理以及使用快速加热和快速冷却装置进行热处理的步骤，以及通过该方法制造的硅单晶晶片。 可以提供一种制造硅单晶晶片的方法，其具有与晶片表面层部分中的常规晶片相比具有更高质量的DZ层，并且在体积部分中具有足够密度的氧诱发缺陷，并且硅单晶 晶圆。
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