公开(公告)号：US6092228A

公开(公告)日：2000-07-18

申请号：US782165

申请日：1997-01-14

申请人： Noriko Tanaka ,  Hiroshi Uranaka ,  Takashi Hamada

发明人： Noriko Tanaka ,  Hiroshi Uranaka ,  Takashi Hamada

IPC分类号： H04W88/02 ,  H04W88/18 ,  G06F11/00

CPC分类号： H04W88/185 ,  H04W88/022

摘要： A signal 101 from a transmitting station includes: an address 102 specific to a message receiving apparatus; a specific message 103 that is an advance notice indicating receipt of a large-volume message; and a message main body 105. The message receiving apparatus includes: a receiving section 11 that outputs a data string by demodulating the signal 101; a decoder 13 that subjects the data string to an error correcting process, converts the corrected data string into a message, and makes an address collation; an analyzer 14 that analyzes the message and outputs a control signal to a total control section 16 if the analyzed message is a specific message; a buffer 15 that stores a message main body; and the total control section 16 that stops a peripheral device section 17 in accordance with signals obtained from the decoder and the analyzer and controls display by sending a message in the buffer 15 to the peripheral device section 17.

摘要翻译： 来自发送站的信号101包括：特定于消息接收装置的地址102; 作为指示接收大容量消息的提前通知的特定消息103; 和消息主体105.消息接收装置包括：接收部分11，通过解调信号101来输出数据串; 对数据串进行纠错处理的解码器13将校正后的数据串变换为消息，进行地址整理; 如果分析的消息是特定消息，则分析器14分析消息并将控制信号输出到总控制部分16; 存储消息主体的缓冲器15; 以及总控制部分16，其根据从解码器和分析器获得的信号停止外围设备部分17，并通过在缓冲器15中向外围设备部分17发送消息来控制显示。

公开(公告)号：US5799023A

公开(公告)日：1998-08-25

申请号：US620646

申请日：1996-03-22

申请人： Noriko Tanaka ,  Hiroshi Uranaka ,  Akio Uesugi ,  Takashi Hamada

发明人： Noriko Tanaka ,  Hiroshi Uranaka ,  Akio Uesugi ,  Takashi Hamada

IPC分类号： H04L1/00 ,  H04W88/02 ,  G06F11/00

CPC分类号： H04W88/023 ,  H04L1/0045 ,  H04L1/0056

摘要： In a message receiving apparatus, a radio paging signal is demodulated into a baseband signal. The baseband signal is decoded into corresponding data. Address information is recovered from the data. Message information is recovered from the data. The recovered message information is subjected to an error correction process. On the other hand, the recovered address information is prevented from being subjected to the error correction process.

摘要翻译： 在消息接收装置中，将无线寻呼信号解调为基带信号。 基带信号被解码成相应的数据。 从数据中恢复地址信息。 消息信息从数据中恢复。 对恢复的消息信息进行纠错处理。 另一方面，防止恢复的地址信息被进行纠错处理。

公开(公告)号：US08570256B2

公开(公告)日：2013-10-29

申请号：US13570478

申请日：2012-08-09

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Mitsuaki Osame ,  Takashi Hamada ,  Tamae Takano ,  Yu Yamazaki ,  Aya Anzai

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Mitsuaki Osame ,  Takashi Hamada ,  Tamae Takano ,  Yu Yamazaki ,  Aya Anzai

IPC分类号： G09G3/30 ,  H01L21/70

CPC分类号： H01L27/1214 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0233 ,  H01L27/3262 ,  H01L2251/5323

摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.

摘要翻译： 一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

公开(公告)号：US08426231B2

公开(公告)日：2013-04-23

申请号：US12857820

申请日：2010-08-17

申请人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

发明人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

IPC分类号： H01L31/18

CPC分类号： H01L31/103 ,  H01L27/14643 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.

摘要翻译： 所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。 所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。 提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。 光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

公开(公告)号：US08283862B2

公开(公告)日：2012-10-09

申请号：US12905568

申请日：2010-10-15

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

IPC分类号： H05B33/22

CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或由含有氧化硅作为其主要成分的材料制成，以便 实现了具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。

公开(公告)号：US08105855B2

公开(公告)日：2012-01-31

申请号：US12533338

申请日：2009-07-31

申请人： Shunpei Yamazaki ,  Takashi Hamada ,  Satoshi Seo

发明人： Shunpei Yamazaki ,  Takashi Hamada ,  Satoshi Seo

IPC分类号： H01L21/00

CPC分类号： H01L33/005 ,  H01L27/3211 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

摘要翻译： 提供一种制造发光器件的方法，其需要低成本，容易并且具有高生产量。 制造发光器件的方法的特征在于：将含有发光材料的溶液在减压下喷射到阳极或阴极; 溶液中的溶剂挥发，直到溶液到达阳极或阴极; 并且剩余的发光材料沉积在阳极或阴极上以形成发光层。 在施加溶液后，不需要用于降低膜厚度的燃烧步骤。 因此，可以提供需要低成本且容易但具有高生产量的制造方法。

公开(公告)号：US07922554B2

公开(公告)日：2011-04-12

申请号：US12576694

申请日：2009-10-09

申请人： Shunpei Yamazaki ,  Takashi Hamada ,  Satoshi Seo

发明人： Shunpei Yamazaki ,  Takashi Hamada ,  Satoshi Seo

IPC分类号： H01J9/00

CPC分类号： H01L51/0005

摘要： The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.

摘要翻译： 本发明涉及一种制造发光器件的方法。 进行发光成膜工序，导电膜形成工序和绝缘膜形成工序中的至少一个，同时以基板的表面与重力方向对向的角度保持基板的方式进行 范围为0至30°。

公开(公告)号：US07744438B2

公开(公告)日：2010-06-29

申请号：US11717815

申请日：2007-03-14

申请人： Shunpei Yamazaki ,  Takashi Hamada ,  Satoshi Seo

发明人： Shunpei Yamazaki ,  Takashi Hamada ,  Satoshi Seo

IPC分类号： H01J9/00

CPC分类号： H01L51/0005

摘要： The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.

摘要翻译： 本发明涉及一种制造发光器件的方法。 进行发光成膜工序，导电膜形成工序和绝缘膜形成工序中的至少一个，同时以基板的表面与重力方向对向的角度保持基板的方式进行 范围为0至30°。

公开(公告)号：US20100029029A1

公开(公告)日：2010-02-04

申请号：US12533338

申请日：2009-07-31

申请人： Shunpei Yamazaki ,  Takashi Hamada ,  Satoshi Seo

发明人： Shunpei Yamazaki ,  Takashi Hamada ,  Satoshi Seo

IPC分类号： H01L21/28

CPC分类号： H01L33/005 ,  H01L27/3211 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

摘要翻译： 提供一种制造发光器件的方法，其需要低成本，容易并且具有高生产量。 制造发光器件的方法的特征在于：将含有发光材料的溶液在减压下喷射到阳极或阴极; 溶液中的溶剂挥发，直到溶液到达阳极或阴极; 并且剩余的发光材料沉积在阳极或阴极上以形成发光层。 在施加溶液后，不需要用于降低膜厚度的燃烧步骤。 因此，可以提供需要低成本且容易但具有高生产量的制造方法。

公开(公告)号：US07531839B2

公开(公告)日：2009-05-12

申请号：US11288218

申请日：2005-11-29

申请人： Takashi Hamada ,  Yasuyuki Arai

发明人： Takashi Hamada ,  Yasuyuki Arai

IPC分类号： H01L27/13

CPC分类号： H01L27/124 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/42384

摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

摘要翻译： 使用少量的光掩模获得对像素部分和驱动电路的驱动条件最佳的TFT结构。 第一至第三半导体膜形成在第一绝缘膜上。 第一形状的第一，第二和第三电极形成在第一至第三半导体膜上。 在第一掺杂处理中，第一形状的第一，第二，第三电极用作掩模，以在第一至第三半导体膜中形成一种导电类型的第一浓度杂质区。 第二形状的第一，第二和第三电极由第一形状的第一，第二和第三电极形成。 在第二掺杂处理中，在第二半导体膜中形成与第二形状的第二电极重叠的一种导电类型的第二浓度杂质区。 在第二掺杂处理中也形成为放置在第一和第二半导体膜中的一种导电类型的第三浓度杂质区。 在第三掺杂处理中，在第三半导体膜中形成具有与一种导电类型相反的另一导电类型的第四和第五浓度杂质区。