公开(公告)号：US20100111469A1

公开(公告)日：2010-05-06

申请号：US12684677

申请日：2010-01-08

Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

IPC: G02B6/122

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US20090154871A1

公开(公告)日：2009-06-18

申请号：US12117708

申请日：2008-05-08

Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

IPC: G02B6/12 ,  H01L21/02

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US20120104531A1

公开(公告)日：2012-05-03

申请号：US13191758

申请日：2011-07-27

Applicant: Mi-Ran PARK ,  O-Kyun Kwon

Inventor： Mi-Ran PARK ,  O-Kyun Kwon

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

Abstract: Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

Abstract translation: 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。

公开(公告)号：US20100316383A1

公开(公告)日：2010-12-16

申请号：US12582211

申请日：2009-10-20

Applicant: Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

Inventor： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

IPC: H04J14/02

CPC classification number: H04J14/0282

Abstract: Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.

Abstract translation: 提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。

公开(公告)号：US07693384B2

公开(公告)日：2010-04-06

申请号：US12111884

申请日：2008-04-29

Applicant: Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

Inventor： Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

IPC: G02B6/10

CPC classification number: G02B6/12007

Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

Abstract translation: 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。

公开(公告)号：US5623140A

公开(公告)日：1997-04-22

申请号：US451059

申请日：1995-05-25

Applicant: Young-Wan Choi ,  O-Kyun Kwon ,  El-Hang Lee

Inventor： Young-Wan Choi ,  O-Kyun Kwon ,  El-Hang Lee

IPC: G02F3/02 ,  H01J40/14

CPC classification number: G02F3/028

Abstract: Disclosed is a nonbiased bistable optical device and a method for fabricating the device, which has a semi-insulating GaAs substrate; a lower mirror having a plurality of reflecting layers which are repeatedly formed on said substrate at least more than twelve times, each of said reflecting layers having a first reflecting film having a first refractive index on said substrate and a second reflecting film a second refractive index different from the first refractive index; a first contact layer formed on the lower mirror; a first buffer layer formed on the first contact layer; a multiple quantum well(MQW) having a plurality of shallow layers which are repeatedly formed, each of said shallow layers having a barrier and a shallow quantum well; a second buffer layer grown on said MQW; and a second contact layer formed on said second buffer layer. The device has an excellent bistablity even without an external applied voltage.

Abstract translation: 公开了一种非偏置双稳态光学器件及其制造方法，该器件具有半绝缘GaAs衬底; 具有多个反射层的下反射镜，所述多个反射层在所述基板上反复形成至少十二次，每个所述反射层具有在所述基板上具有第一折射率的第一反射膜和第二反射膜，第二折射率 不同于第一折射率; 形成在下反射镜上的第一接触层; 形成在所述第一接触层上的第一缓冲层; 具有重复形成的多个浅层的多量子阱（MQW），每个所述浅层具有阻挡层和浅量子阱; 在所述MQW上生长的第二缓冲层; 以及形成在所述第二缓冲层上的第二接触层。 即使没有外部施加电压，该器件也具有优异的双稳态。

公开(公告)号：US08804232B2

公开(公告)日：2014-08-12

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/10

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US20130163916A1

公开(公告)日：2013-06-27

申请号：US13487807

申请日：2012-06-04

Applicant: Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

Inventor： Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

IPC: G02B6/12 ,  H01L21/02

CPC classification number: G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

Abstract: Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

Abstract translation: 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

公开(公告)号：US07927988B2

公开(公告)日：2011-04-19

申请号：US12488577

申请日：2009-06-21

Applicant: In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/425

CPC classification number: H01L21/2007 ,  H01L21/76251

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

公开(公告)号：US20100092175A1

公开(公告)日：2010-04-15

申请号：US12367431

申请日：2009-02-06

Applicant: Hyun Soo KIM ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Hyun Soo KIM ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

IPC: H04J14/02 ,  H01S3/16

CPC classification number: H01S5/50 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/509

Abstract: Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.

Abstract translation: 提供了一种半导体光放大器和使用其的光信号处理方法。 反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。 向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。