公开(公告)号：US11870214B2

公开(公告)日：2024-01-09

申请号：US17971156

申请日：2022-10-21

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich Sorg ,  Harald König ,  Alfred Lell ,  Florian Peskoller ,  Karsten Auen ,  Roland Schulz ,  Herbert Brunner ,  Frank Singer ,  Roland Hüttinger

IPC: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/0078 ,  H01S5/0087

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US11735887B2

公开(公告)日：2023-08-22

申请号：US16754723

申请日：2018-10-08

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich Sorg ,  Harald König ,  Alfred Lell ,  Florian Peskoller ,  Karsten Auen ,  Roland Schulz ,  Herbert Brunner ,  Frank Singer ,  Roland Hüttinger

IPC: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/0078 ,  H01S5/0087

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 μm. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US20210367406A1

公开(公告)日：2021-11-25

申请号：US16954961

申请日：2018-12-14

Applicant: OSRAM OLED GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/323 ,  H01S5/024 ,  H01S5/0237 ,  H01S5/40 ,  H01S5/22 ,  B23K26/122

Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

公开(公告)号：US11942763B2

公开(公告)日：2024-03-26

申请号：US16954961

申请日：2018-12-14

Applicant: OSRAM OLED GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/40 ,  B23K26/122 ,  H01S5/0237 ,  H01S5/024 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/02345

CPC classification number: H01S5/4031 ,  B23K26/122 ,  H01S5/0237 ,  H01S5/02469 ,  H01S5/02492 ,  H01S5/04254 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/02345 ,  H01S5/04256

Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.