公开(公告)号：US09796047B2

公开(公告)日：2017-10-24

申请号：US14768448

申请日：2014-02-25

申请人： Schlumberger Technology Corporation

发明人： Richard Saenger

IPC分类号： B23K26/122 ,  B23K26/21 ,  B23K26/12 ,  E21B43/11 ,  E21B43/119 ,  E21B47/12 ,  B23K26/211

CPC分类号： B23K26/122 ,  B23K26/1224 ,  B23K26/128 ,  B23K26/21 ,  B23K26/211 ,  E21B43/11 ,  E21B43/1195 ,  E21B47/123

摘要： Systems and methods are provided for laser heating in a fluid environment (30). Such a system may include a laser generator (12) and a laser output sub (16) separate from one another via an optical fiber (18). The laser generator may generate a heating laser pulse over the optical fiber. The laser output sub may emit the heating laser pulse to heat a substrate (22) in the fluid environment (30). To enable the heating laser pulse to pass between the laser output sub (16) and the substrate (22), the laser output sub may dispense a laser-transmissive optical grease or a laser-transmissive magnetic fluid, or may generate a vacuum cavitation bubble in the fluid between the laser output sub (16) and the substrate (22).

公开(公告)号：US20170283930A1

公开(公告)日：2017-10-05

申请号：US15626837

申请日：2017-06-19

申请人： United Technologies Corporation

发明人： Robert J. Meehan ,  Neil B. Ridgeway ,  Christopher J. Millea

IPC分类号： C23C4/02

CPC分类号： C23C4/02 ,  B23K26/082 ,  B23K26/122 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/40 ,  B23K2103/10 ,  C23C4/073 ,  C23C4/134 ,  C23C4/18 ,  C23C14/022 ,  C23C14/083 ,  C23C14/30 ,  C23C14/325 ,  C23C28/3215 ,  C23C28/3455 ,  F01D5/288 ,  F05D2230/13 ,  F05D2230/31 ,  F05D2300/701

摘要： A method of forming a thermal barrier coating on a metal part includes laser cleaning a surface of the metal part to remove undesirable oxides and residues from the surface of the part. It further includes depositing an aluminum containing bondcoat on the part and thermally interdiffusing the bondcoat and the part with a heat treatment. Laser cleaning a surface of the bondcoat to remove oxides and debris from the surface forms an alpha aluminum oxide layer on the bondcoat. A ceramic topcoat is then deposited on the alpha aluminum oxide layer at a temperature above 1800° F. (982° C.).

公开(公告)号：US09768016B2

公开(公告)日：2017-09-19

申请号：US14899552

申请日：2014-06-25

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/04 ,  H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  B23K26/12 ,  C23C16/22 ,  C23C16/56 ,  H01L21/268 ,  H01L21/324 ,  H01L29/20 ,  B23K103/00

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US09666432B2

公开(公告)日：2017-05-30

申请号：US14909004

申请日：2014-09-17

申请人： Ultratech, Inc.

发明人： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L21/02 ,  C23C16/22 ,  H01L29/20 ,  H01L21/268 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  B23K103/00

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

公开(公告)号：US09583225B2

公开(公告)日：2017-02-28

申请号：US13404608

申请日：2012-02-24

申请人： Takuya Uehara ,  Itaru Chida ,  Hiroyuki Miyasaka

发明人： Takuya Uehara ,  Itaru Chida ,  Hiroyuki Miyasaka

IPC分类号： B23K26/00 ,  G21C17/017 ,  B23K26/12 ,  G21C19/20 ,  G21C17/01 ,  H01S3/00 ,  H01S3/02 ,  H01S3/04

CPC分类号： G21C17/017 ,  B23K26/122 ,  B23K26/1224 ,  B23K26/128 ,  B23K26/146 ,  B23K26/703 ,  G21C17/01 ,  G21C19/207 ,  H01S3/005 ,  H01S3/025 ,  H01S3/0407

摘要： A laser irradiation apparatus which is provided with: an environment isolation container, which houses a laser oscillator and is disposed in water; a laser irradiation head, which collects laser beams and irradiates a part to be machined with the laser beams; a light guide section which transmits the laser beams from the laser oscillator to the laser irradiation head; a power supply apparatus which supplies the laser oscillator with power; a cooling water supplying apparatus, which supplies the laser oscillator with cooling water through a cooling water supplying path; and a temperature sensor which measures the temperature inside of the environment isolation container. The temperature and/or the flow quantity of the cooling water to be supplied from the cooling water supplying apparatus is controlled on the basis of the measurement results obtained from the temperature sensor.

摘要翻译： 一种激光照射装置，其具备：容纳激光振荡器并设置在水中的环境隔离容器; 激光照射头，其收集激光束并用激光束照射待加工的部件; 将激光束从激光振荡器传递到激光照射头的导光部; 向激光振荡器供电的供电装置; 冷却水供给装置，通过冷却水供给路向激光振荡器供给冷却水; 以及温度传感器，其测量环境隔离容器内的温度。 基于从温度传感器获得的测量结果，控制从冷却水供给装置供给的冷却水的温度和/或流量。

公开(公告)号：US09339891B2

公开(公告)日：2016-05-17

申请号：US14000721

申请日：2012-02-13

申请人： Sanshiro Nagare

发明人： Sanshiro Nagare

IPC分类号： B23K26/122 ,  B82Y40/00 ,  B23K26/12 ,  B29C59/16 ,  B23K26/16 ,  B23K26/36 ,  B29C35/08

CPC分类号： B23K26/122 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/082 ,  B23K26/1224 ,  B23K26/16 ,  B23K26/361 ,  B23K26/362 ,  B29C59/16 ,  B29C2035/0838 ,  B82Y40/00

摘要： A liquid phase laser ablation apparatus is provided, which includes a vessel for storing liquid in which a component to be atomized is arranged; a laser oscillating device for oscillating a laser light irradiated to the component through the liquid; a reflecting mirror configured to freely change an angle of incidence of the laser light with respect to a surface of the liquid; a focusing lens for focusing the laser light oscillated from the laser oscillating device; a cover body for covering an upper surface of the vessel; and a laser light introduction port provided on the cover body or a side surface of the vessel above the surface of the liquid. Accordingly, liquid will not adhere to optical components constituting the apparatus, there is little contamination and damage to the optical components, and laser ablation can occur in a continuous and stable manner for a long period of time.

摘要翻译： 提供了一种液相激光烧蚀装置，其包括用于储存液体的容器，其中布置有被雾化的部件; 激光振荡装置，用于使通过所述液体照射到所述部件的激光振荡; 反射镜，被配置为自由地改变激光相对于液体的表面的入射角; 聚焦透镜，用于聚焦从激光振荡装置振荡的激光; 用于覆盖容器的上表面的盖体; 以及设置在所述盖体上的所述液体的表面上方的所述容器的侧面的激光导入口。 因此，液体不会附着在构成装置的光学部件上，对光学部件的污染和损伤小，激光烧蚀可以长时间连续稳定地进行。

公开(公告)号：US08951936B2

公开(公告)日：2015-02-10

申请号：US13636166

申请日：2011-05-09

申请人： Katsuya Sennyu ,  Hiroshi Hara ,  Takehisa Okuda

发明人： Katsuya Sennyu ,  Hiroshi Hara ,  Takehisa Okuda

IPC分类号： H01L39/24 ,  H05H7/20 ,  B23K26/12 ,  B23K33/00 ,  B23K15/04 ,  B23K26/20 ,  B23K26/28

CPC分类号： H05H7/20 ,  B23K15/04 ,  B23K26/122 ,  B23K26/1224 ,  B23K26/206 ,  B23K26/28 ,  B23K33/00 ,  B23K2101/04 ,  Y10T29/49014

摘要： Provided is a method of manufacturing a superconducting accelerator cavity in which a plurality of half cells having opening portions (equator portions and iris portions) at both ends thereof in an axial direction are placed one after another in the axial direction, contact portions where the corresponding opening portions come into contact with each other are joined by welding, and thus, a superconducting accelerator cavity is manufactured, the half cells to be joined are arranged so that the axial direction thereof extends in a vertical direction; and concave portions that are concave towards an outer side are also formed at inner circumferential surfaces located below the contact portions of the half cells positioned at a bottom; and the contact portions are joined from outside by penetration welding.

摘要翻译： 提供了一种制造超导加速器腔的方法，其中在轴向两端具有开口部（赤道部和虹膜部）的多个半单元沿轴向一个接一个地放置，其中相应的 彼此接触的开口部通过焊接而接合，从而制造超导加速器腔体，将被连接的半电池单元的轴方向在垂直方向上延伸， 并且在位于底部的半单元的接触部的下方的内周面也形成有向外侧凹入的凹部， 并且接触部分通过穿透焊接从外部接合。

公开(公告)号：US20140291305A1

公开(公告)日：2014-10-02

申请号：US13851344

申请日：2013-03-27

申请人： FEI Company

发明人： Marcus Straw

IPC分类号： B23K26/06 ,  B23K26/36

CPC分类号： B23K26/0648 ,  B23K15/08 ,  B23K26/00 ,  B23K26/06 ,  B23K26/0624 ,  B23K26/12 ,  B23K26/122 ,  B23K26/1224 ,  B23K26/127 ,  B23K26/16 ,  B23K26/346 ,  B23K26/36 ,  B23K26/361 ,  B23K26/362 ,  B23K26/364 ,  B23K26/402 ,  B23K26/706 ,  B23K28/02 ,  B23K2103/50 ,  H01J37/226 ,  H01J37/3056

摘要： A method and apparatus to perform laser ablation in the vicinity of a charged particle beam while simultaneously protecting the light optical components of the apparatus utilized to perform the ablation from being coated with debris resulting from the ablation process. According to preferred embodiments of the present invention, a protective transparent screen is used to shield the laser optical components. A preferred screen could be replaced or repositioned without breaking vacuum in the sample chamber and would not be particularly susceptible to undesirable charging effects.

摘要翻译： 一种在带电粒子束附近进行激光烧蚀的方法和装置，同时保护用于执行消融的装置的光学部件被从消融过程产生的碎屑涂覆。 根据本发明的优选实施例，使用保护性透明屏蔽屏蔽激光光学部件。 可以在不破坏样品室中的真空的情况下更换或重新定位优选的筛网，并且不会特别容易受到不期望的充电效果的影响。

公开(公告)号：US20130020297A1

公开(公告)日：2013-01-24

申请号：US13628009

申请日：2012-09-26

申请人： University of Virginia Patent Foundation, d/b/a

发明人： Mool C. Gupta ,  Barada K. Nayak

IPC分类号： B23K26/12

CPC分类号： B23K26/12 ,  B23K26/122 ,  B23K26/1224 ,  B23K26/127 ,  B23K26/355 ,  B23K26/3584 ,  Y10S977/901

摘要： The surface of a material is textured and by exposing the surface to pulses from an ultrafast laser. The laser treatment causes pillars to form on the treated surface. These pillars provide for greater light absorption. Texturing and crystallization can be carried out as a single step process. The crystallization of the material provides for higher electric conductivity and changes in optical and electronic properties of the material. The method may be performed in vacuum or a gaseous environment. The gaseous environment may aid in texturing and/or modifying physical and chemical properties of the surfaces. This method may be used on various material surfaces, such as semiconductors, metals and their alloys, ceramics, polymers, glasses, composites, as well as crystalline, nanocrystalline, polycrystalline, microcrystalline, and amorphous phases.

摘要翻译： 材料的表面是纹理的，并且通过将表面暴露于来自超快激光的脉冲。 激光治疗会在被处理的表面上形成柱子。 这些柱子提供更大的光吸收。 纹理和结晶可以单步进行。 材料的结晶提供了更高的导电性和材料的光学和电子性能的变化。 该方法可以在真空或气体环境中进行。 气体环境可以有助于纹理化和/或改变表面的物理和化学性质。 该方法可用于各种材料表面，例如半导体，金属及其合金，陶瓷，聚合物，玻璃，复合材料以及晶体，纳米晶体，多晶，微晶和非晶相。

公开(公告)号：US20120225568A1

公开(公告)日：2012-09-06

申请号：US13406763

申请日：2012-02-28

申请人： Yusaku IZAWA ,  Junjun LIU ,  Hongyu YUE ,  Dorel TOMA

发明人： Yusaku IZAWA ,  Junjun LIU ,  Hongyu YUE ,  Dorel TOMA

IPC分类号： H01L21/26 ,  B23K26/42 ,  B23K26/12 ,  B23K26/08

CPC分类号： H01L21/02354 ,  B23K26/0006 ,  B23K26/082 ,  B23K26/122 ,  B23K26/1224 ,  B23K26/127 ,  B23K26/354 ,  B23K2103/52 ,  B23K2103/56 ,  C03C23/0025 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02337 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115

摘要： An annealing method irradiates a target object, having a film formed on its surface, with a laser beam to perform an annealing process to the target object. The surface of the target object is irradiated with the laser beam obliquely at an incident angle that is determined to achieve an improved laser absorptance of the film.

摘要翻译： 退火方法用激光束照射具有形成在其表面上的膜的目标物体，以对目标物体进行退火处理。 目标物体的表面以激光束被倾斜地以确定为实现改善的膜的激光吸收率的入射角照射。