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    Optoelectronic Semiconductor Component and Conversion Element
    3.
    发明申请
    Optoelectronic Semiconductor Component and Conversion Element 审中-公开
    光电半导体元件和转换元件

    公开(公告)号：US20140264422A1

    公开(公告)日：2014-09-18

    申请号：US14354098

    申请日：2012-10-09

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Reiner Windisch ,  Hailing Cui ,  Gertrud Kraeuter ,  Markus Schneider

    IPC: H01L33/50 ,  C09K11/02 ,  H01L33/58

    CPC classification number: H01L33/504 ,  C09K11/025 ,  H01L33/501 ,  H01L33/56 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

    Abstract: In at least one embodiment, an optoelectronic semiconductor component includes an optoelectronic semiconductor chip. The semiconductor component includes a conversion element that is arranged to convert at least some radiation emitted by the semiconductor chip into radiation of a different wavelength. The conversion element comprises at least one luminescent substance and scattering particles and also at least one matrix material. The scattering particles are embedded in the matrix material. A difference in the refractive index between the matrix material and a material of the scattering particles at a temperature of 300 K is at the most 0.15. The difference in the refractive index between the matrix material and the material of the scattering particles at a temperature of 380 K is greater than at a temperature of 300 K.

    Abstract translation: 在至少一个实施例中，光电子半导体部件包括光电子半导体芯片。 半导体部件包括转换元件，其被配置为将由半导体芯片发射的至少一些辐射转换成不同波长的辐射。 转换元件包括至少一种发光物质和散射粒子以及至少一种基质材料。 散射颗粒嵌入基质材料中。 在300K的温度下，基体材料和散射粒子的材料之间的折射率差异为0.15以下。 在380K的温度下，基体材料与散射粒子的材料之间的折射率之差大于300K的温度。

    Methods for producing a conversion element and an optoelectronic component
    4.
    发明授权
    Methods for producing a conversion element and an optoelectronic component 有权

    公开(公告)号：US11515454B2

    公开(公告)日：2022-11-29

    申请号：US16909685

    申请日：2020-06-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alan Piquette ,  Adam Scotch ,  Maxim N. Tchoul ,  Gertrud Kraeuter

    IPC: H01L33/56 ,  H01L33/50

    Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

    Methods for producing a conversion element and an optoelectronic component
    5.
    发明授权
    Methods for producing a conversion element and an optoelectronic component 有权

    公开(公告)号：US10727379B2

    公开(公告)日：2020-07-28

    申请号：US15932366

    申请日：2018-02-16

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alan Piquette ,  Adam Scotch ,  Maxim N. Tchoul ,  Gertrud Kraeuter

    IPC: H01L33/56 ,  H01L33/50

    Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

    Methods for producing a conversion element and an optoelectronic component
    8.
    发明申请
    Methods for producing a conversion element and an optoelectronic component 审中-公开

    公开(公告)号：US20190259919A1

    公开(公告)日：2019-08-22

    申请号：US15932366

    申请日：2018-02-16

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alan Piquette ,  Adam Scotch ,  Maxim N. Tchoul ,  Gertrud Kraeuter

    IPC: H01L33/50

    Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

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