Abstract:
The present invention relates to an optoelectronic component comprising a semiconductor (1) and a polyorganosiloxane. The polyorganosiloxane is obtainable by crosslinking a composition comprising a first organosiloxane having at least one terminal vinyl group, a second organosiloxane having at least one silicon-hydrogen bond and an alkoxysilane having at least one epoxy group. Additionally specified is a method of producing an optoelectronic component.
Abstract:
An optoelectronic component, comprising: a carrier (1) and a semiconductor layer sequence (20) configured for emission of electromagnetic primary radiation and arranged on the carrier (10). The semiconductor layer sequence (20) comprises a radiation main side (21) facing away from the carrier. A connecting layer is applied directly at least on the radiation main side (21) of the semiconductor layer sequence. A conversion element (40) is configured for emission of electromagnetic secondary radiation and is arranged directly on connecting layer (30), and being formed as a prefabricated body. Connecting layer (30) comprises at least one inorganic filler (31) embedded in matrix material and being formed with a layer thickness of less than or equal to 2 μm. The prefabricated body is attached to the semiconductor layer sequence by the connecting layer which is configured in order to filter out a short-wave component of the electromagnetic primary radiation.