公开(公告)号：US20150357530A1

公开(公告)日：2015-12-10

申请号：US14763157

申请日：2013-12-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tony ALBRECHT ,  Thomas SCHLERETH ,  Albert SCHNEIDER

IPC: H01L33/50 ,  H01L33/62 ,  H01L33/00 ,  H01L33/48 ,  H01L33/56

CPC classification number: H01L33/502 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The invention relates to a method for producing a plurality of optoelectronic components, comprising the following steps: providing an auxiliary support wafer (1) having contact structures (4), wherein the auxiliary support wafer comprises glass, sapphire, or a semiconductor material, applying a plurality of radiation-emitting semiconductor bodies (5) to the contact structures (4), encapsulating an least the contact structures (4) with a potting mass (10), and removing the auxiliary support wafer (1). The invention further relates to an optoelectronic component.

Abstract translation: 本发明涉及一种用于制造多个光电子部件的方法，包括以下步骤：提供具有接触结构（4）的辅助支撑晶片（1），其中辅助支撑晶片包括玻璃，蓝宝石或半导体材料，应用 多个辐射发射半导体本体（5）连接至接触结构（4），至少用封装块（10）封装接触结构（4），并移除辅助支撑晶片（1）。 本发明还涉及光电子部件。

公开(公告)号：US20160013369A1

公开(公告)日：2016-01-14

申请号：US14769699

申请日：2014-03-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Kathy SCHMIDTKE ,  Ion STOLL ,  Tony ALBRECHT ,  Markus KLEIN

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/00 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/502 ,  H01L33/005 ,  H01L33/44 ,  H01L33/483 ,  H01L33/501 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: An optoelectronic component, comprising: a carrier (1) and a semiconductor layer sequence (20) configured for emission of electromagnetic primary radiation and arranged on the carrier (10). The semiconductor layer sequence (20) comprises a radiation main side (21) facing away from the carrier. A connecting layer is applied directly at least on the radiation main side (21) of the semiconductor layer sequence. A conversion element (40) is configured for emission of electromagnetic secondary radiation and is arranged directly on connecting layer (30), and being formed as a prefabricated body. Connecting layer (30) comprises at least one inorganic filler (31) embedded in matrix material and being formed with a layer thickness of less than or equal to 2 μm. The prefabricated body is attached to the semiconductor layer sequence by the connecting layer which is configured in order to filter out a short-wave component of the electromagnetic primary radiation.

Abstract translation: 一种光电子部件，包括：载体（1）和被配置为发射电磁一次辐射并且布置在载体（10）上的半导体层序列（20）。 半导体层序列（20）包括背离载体的辐射主侧（21）。 至少在半导体层序列的辐射主侧（21）上直接施加连接层。 转换元件（40）被配置为发射电磁次级辐射，并且直接设置在连接层（30）上，并被形成为预制体。 连接层（30）包括嵌入基质材料中的至少一种无机填料（31），并形成层厚度小于或等于2μm。 预制体通过连接层附接到半导体层序列，该连接层被配置为滤除电磁一次辐射的短波分量。

公开(公告)号：US20180197841A1

公开(公告)日：2018-07-12

申请号：US15328007

申请日：2015-07-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tony ALBRECHT ,  Tamas LAMFALUSI ,  Roland SCHULZ ,  Frank SINGER ,  Matthias SABATHIL

IPC: H01L25/075 ,  H01L33/60

CPC classification number: H01L25/0753 ,  F21K9/64 ,  H01L33/405 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: The invention relates to a lighting module (1) comprising an assembly body (3) extending between a rear side (31) and a front side (30) opposite the rear side, and comprising a plurality of semiconductor components (2) provided for generating radiation, wherein: the assembly body has a plurality of recesses (35) on the rear side, in which the semiconductor components are arranged; the assembly body is permeable to the radiation generated in the semiconductor components, and said radiation passes out of the front side of the assembly body; a contact layer (5) is arranged on the rear side of the assembly body, to which the semiconductor components are connected in an electrically conductive manner via connecting lines; and a reflector layer (6) is arranged on the rear side of the assembly body, said reflector layer entirely covering at least the recesses.

公开(公告)号：US20150372054A1

公开(公告)日：2015-12-24

申请号：US14767245

申请日：2014-02-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Thomas SCHLERETH ,  Markus KIRSCH ,  Christian GAERTNER ,  Tony ALBRECHT

IPC: H01L27/15 ,  H01L33/48 ,  H01L33/62 ,  H01L33/38 ,  H01L33/14

CPC classification number: H01L27/156 ,  H01L33/14 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor chip (10) is provided which comprises: a semiconductor layer sequence (20) with a p-type semiconductor region (5) and an n-type semiconductor region (3), a plurality of p-contacts (11a, 11b), which are connected electrically conductively with the p-type semiconductor region (5), and a plurality of n-contacts (12a, 12b), which are connected electrically conductively with the n-type semiconductor region (3), wherein: the p-contacts (11a, 11b) and the n-contacts (12a, 12b) are arranged on a rear side of the semiconductor chip (10), the semiconductor chip (10) comprises a plurality of regions (21, 22) arranged adjacent one another, and the regions (21, 22) each comprise one of the p-contacts (11a, 11b) and one of the n-contacts (12a, 12b).

Abstract translation: 提供一种半导体芯片（10），其包括：具有p型半导体区域（5）和n型半导体区域（3）的半导体层序列（20），多个p型触点（11a，11b） ，其与p型半导体区域（5）电连接，以及与n型半导体区域（3）导电连接的多个n型触点（12a，12b），其中：p 所述半导体芯片（10）包括与所述半导体芯片（10）相邻的多个区域（21,22），所述半导体芯片（10）具有与所述半导体芯片（10）相邻的多个区域（21,22） 另一个，并且区域（21,22）各自包括p触点（11a，11b）中的一个和n触点（12a，12b）中的一个。

公开(公告)号：US20160079489A1

公开(公告)日：2016-03-17

申请号：US14785620

申请日：2014-04-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Markus RICHTER ,  Alexander BAUMGARTNER ,  Hans-Christoph GALLMEIER ,  Tony ALBRECHT

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/54 ,  H01L33/56

CPC classification number: H01L33/507 ,  H01L33/0095 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps:providing a plurality of semiconductor bodies (1) which are suitable for emitting electromagnetic radiation from a radiation exit face (3),applying the semiconductor bodies (1) to a carrier (2),applying a first mask layer (4) to regions of the carrier (2) between the semiconductor bodies (1),applying a conversion layer (5) to the entire surface of the semiconductor bodies (1) and the first mask layer (4) using a spray coating method, andremoving the first mask layer (4), such that in each case a conversion layer (5) arises on the radiation exit faces (3) of the semiconductor bodies (1).

Abstract translation: 提供了一种用于制造多个辐射发射半导体芯片的方法，具有以下步骤：提供适于从辐射出射面（3）发射电磁辐射的多个半导体本体（1），施加半导体本体（ 1）到载体（2）上，在半导体体（1）之间的载体（2）的区域上施加第一掩模层（4），在半导体本体（1）的整个表面上施加转换层 ）和第一掩模层（4），并且去除第一掩模层（4），使得在每种情况下，在半导体主体的辐射出射面（3）上出现转换层（5） 1）。