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    Radiation-emitting optoelectronic device
    2.
    发明授权
    Radiation-emitting optoelectronic device 有权

    公开(公告)号：US10411170B2

    公开(公告)日：2019-09-10

    申请号：US15570699

    申请日：2016-04-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Sonja Tragl ,  Dominik Eisert ,  Stefan Lange ,  Nils Kaufmann ,  Alexander Martin ,  Krister Bergenek

    IPC: H01L33/50 ,  C09K11/77 ,  A61B1/06 ,  H01L33/48 ,  H01L33/58 ,  H01L33/62

    Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

    OPTOELECTRONIC ARRANGEMENT
    3.
    发明申请
    OPTOELECTRONIC ARRANGEMENT 有权

    公开(公告)号：US20180120157A1

    公开(公告)日：2018-05-03

    申请号：US15568913

    申请日：2016-04-29

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Nils Kaufmann ,  Alexander Martin

    IPC: G01J3/10 ,  G01J3/42 ,  G01J3/18

    CPC classification number: G01J3/108 ,  G01J3/0289 ,  G01J3/10 ,  G01J3/18 ,  G01J3/42 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58

    Abstract: An optoelectronic arrangement includes an optoelectronic semiconductor chip, a wavelength-converting element and a detector component, wherein the optoelectronic arrangement is configured to emit light with a first peak wavelength and to emit light with a second peak wavelength, the first peak wavelength is in the visible spectral range and the second peak wavelength is in the non-visible spectral range or the first peak wavelength is in the non-visible spectral range and the second peak wavelength is in the visible spectral range, and the optoelectronic arrangement emits the light whose peak wavelength is in the non-visible spectral range into a target area, and the detector component is configured to detect light backscattered from the target area and the peak wavelength of which is in the non-visible spectral range.

    Optoelectronic arrangement
    6.
    发明授权
    Optoelectronic arrangement 有权

    公开(公告)号：US09983057B2

    公开(公告)日：2018-05-29

    申请号：US15568913

    申请日：2016-04-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Nils Kaufmann ,  Alexander Martin

    IPC: G01J3/18 ,  G01J3/10 ,  G01J3/42 ,  H01L33/58 ,  H01L33/50

    CPC classification number: G01J3/108 ,  G01J3/0289 ,  G01J3/10 ,  G01J3/18 ,  G01J3/42 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58

    Abstract: An optoelectronic arrangement includes an optoelectronic semiconductor chip, a wavelength-converting element and a detector component, wherein the optoelectronic arrangement is configured to emit light with a first peak wavelength and to emit light with a second peak wavelength, the first peak wavelength is in the visible spectral range and the second peak wavelength is in the non-visible spectral range or the first peak wavelength is in the non-visible spectral range and the second peak wavelength is in the visible spectral range, and the optoelectronic arrangement emits the light whose peak wavelength is in the non-visible spectral range into a target area, and the detector component is configured to detect light backscattered from the target area and the peak wavelength of which is in the non-visible spectral range.

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