公开(公告)号：US20150333232A1

公开(公告)日：2015-11-19

申请号：US14654500

申请日：2013-12-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Stephan Preuß ,  Michael Zitzlsperger ,  Caroline Kistner

IPC: H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/54

CPC classification number: H01L33/486 ,  H01L24/97 ,  H01L33/505 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for producing an optoelectronic thin-film chip semiconductor device is specified. A conductor structure is applied on a carrier and a multiplicity of optoelectronic semiconductor chips are arranged between the conductor structures. Each of the optoelectronic semiconductor chips includes a layer at a top side. Furthermore, electrical connections between semiconductor chip and the conductor structure are established, for instance using a bonding wire. The semiconductor chips and the conductor structure are surrounded with a molded body. The molded body does not project beyond the optoelectronic semiconductor chips at the top side thereof facing away from the carrier. Moreover, the carrier is removed and the semiconductor chips surrounded by molding are singulated.

Abstract translation: 规定了制造光电薄膜芯片半导体器件的方法。 导体结构被施加在载体上，并且多个光电半导体芯片布置在导体结构之间。 每个光电半导体芯片包括在顶侧的层。 此外，建立了半导体芯片和导体结构之间的电连接，例如使用接合线。 半导体芯片和导体结构被成型体包围。 成型体在远离载体的顶侧不会突出超过光电子半导体芯片。 此外，移除载体，并且通过模制包围的半导体芯片被分割。