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公开(公告)号：US20150357516A1
公开(公告)日：2015-12-10
申请号：US14830616
申请日：2015-08-19
CPC分类号： H01L33/14 , H01L31/112 , H01L33/02 , H01L33/30 , H01L33/305 , H01L33/382 , H01L33/40 , H01L33/486 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5
摘要翻译： 发光二极管芯片包括具有磷化物半导体材料的半导体层序列。 半导体层序列包含p型半导体区域，n型半导体区域和布置在p型半导体区域和n型半导体区域之间的有源层。 有源区域用于发射电磁辐射。 n型半导体区域面向发光二极管芯片的辐射出射区域，p型半导体区域面向发光二极管芯片的载体。 在载体和p型半导体区域之间布置有厚度小于500nm的电流扩散层。 电流扩散层具有一个或多个p掺杂的Al x Ga 1-x As层，其具有0.5
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公开(公告)号：US12018806B2
公开(公告)日：2024-06-25
申请号：US17768698
申请日：2020-12-01
发明人： Martin Brandl , Clemens Hofmann , Daniel Richter
IPC分类号： F21S41/148 , F21S41/151 , F21S41/19 , F21S45/47 , F21Y107/90
CPC分类号： F21S41/192 , F21S41/148 , F21S41/151 , F21S45/47 , F21Y2107/90
摘要： The disclosure relates to a halogen lamp replacement, in particular for car headlights, having a carrier plate which is covered on both main surfaces by structured electrically conductive layers, to which at least one respective light-emitting component, in particular at least one respective light-emitting-diode chip, is attached, the carrier plate being designed to dissipate heat generated by the light-emitting components to a heat sink formed by a coupling structure.
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公开(公告)号：US09853188B2
公开(公告)日：2017-12-26
申请号：US14830616
申请日：2015-08-19
IPC分类号： H01L33/02 , H01L33/14 , H01L33/60 , H01L33/48 , H01L33/30 , H01L31/112 , H01L33/38 , H01L33/40
CPC分类号： H01L33/14 , H01L31/112 , H01L33/02 , H01L33/30 , H01L33/305 , H01L33/382 , H01L33/40 , H01L33/486 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5
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