公开(公告)号：US09500938B2

公开(公告)日：2016-11-22

申请号：US14436071

申请日：2013-10-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Wiener ,  Konrad Wagner

IPC: G03B21/20 ,  F21V9/08 ,  F21K99/00 ,  H01L33/46 ,  G02B19/00 ,  H01L25/075 ,  H01L33/50 ,  F21Y101/02

CPC classification number: G03B21/204 ,  F21K9/64 ,  F21V9/08 ,  F21Y2101/00 ,  F21Y2115/10 ,  G02B19/0028 ,  G02B19/0061 ,  H01L25/0753 ,  H01L33/46 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A radiation-emitting component is disclosed. In embodiments a component includes a radiation-emitting semiconductor chip having a radiation exit area including a side face and a main face, a conversion element having a radiation exit area including a side face and a main face, and a first reflection element disposed downstream of the conversion element and the radiation-emitting semiconductor chip, wherein a ratio of a sum of the radiation exit areas of the radiation-emitting semiconductor chip to a sum of the radiation exit areas of the conversion element is greater than 1, wherein the conversion element adjoins the radiation-emitting semiconductor chip, wherein the radiation-emitting semiconductor chip is configured to generate primary radiation, wherein the conversion element is configured to convert the primary radiation into secondary radiation, and wherein the primary radiation and the secondary radiation leave the radiation-emitting component exclusively through the first reflection element.

Abstract translation: 公开了辐射发射部件。 在实施例中，部件包括具有包括侧面和主面的辐射出射区域的辐射发射半导体芯片，具有包括侧面和主面的辐射出射区域的转换元件，以及设置在 转换元件和辐射发射半导体芯片，其中辐射发射半导体芯片的辐射出射面积之和与转换元件的辐射出射面积之和的比率大于1，其中转换元件 邻近辐射发射半导体芯片，其中发射辐射的半导体芯片被配置为产生主要辐射，其中转换元件被配置为将初级辐射转换成次级辐射，并且其中初级辐射和次级辐射离开辐射发射半导体芯片， 发射部件仅通过第一反射元件。

公开(公告)号：US20180337290A1

公开(公告)日：2018-11-22

申请号：US15980939

申请日：2018-05-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Richter ,  Daniel Wiener

IPC: H01L31/0203 ,  H01L33/62 ,  H01L33/52 ,  H01L33/58 ,  H01L31/02 ,  H01L31/0232 ,  H01S5/022

Abstract: An optoelectronic component includes a housing body comprising a mounting face and a leadframe embedded into the housing body. The leadframe comprises a first and a second leadframe section, wherein the leadframe sections each comprise a contact region and a terminal region. While the contact regions are exposed at the mounting face, the terminal regions project laterally from the housing body. The housing body is completely enclosed by a molding material, wherein the terminal regions are not enclosed by the molding material.

公开(公告)号：US20150268543A1

公开(公告)日：2015-09-24

申请号：US14436071

申请日：2013-10-11

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Daniel Wiener ,  Konrad Wagner

IPC: G03B21/20 ,  F21V9/08 ,  F21K99/00

CPC classification number: G03B21/204 ,  F21K9/64 ,  F21V9/08 ,  F21Y2101/00 ,  F21Y2115/10 ,  G02B19/0028 ,  G02B19/0061 ,  H01L25/0753 ,  H01L33/46 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A radiation-emitting component is disclosed. In embodiments a component includes a radiation-emitting semiconductor chip having a radiation exit area including a side face and a main face, a conversion element having a radiation exit area including a side face and a main face, and a first reflection element disposed downstream of the conversion element and the radiation-emitting semiconductor chip, wherein a ratio of a sum of the radiation exit areas of the radiation-emitting semiconductor chip to a sum of the radiation exit areas of the conversion element is greater than 1, wherein the conversion element adjoins the radiation-emitting semiconductor chip, wherein the radiation-emitting semiconductor chip is configured to generate primary radiation, wherein the conversion element is configured to convert the primary radiation into secondary radiation, and wherein the primary radiation and the secondary radiation leave the radiation-emitting component exclusively through the first reflection element.

Abstract translation: 公开了辐射发射部件。 在实施例中，部件包括具有包括侧面和主面的辐射出射区域的辐射发射半导体芯片，具有包括侧面和主面的辐射出射区域的转换元件，以及设置在 转换元件和辐射发射半导体芯片，其中辐射发射半导体芯片的辐射出射面积之和与转换元件的辐射出射面积的总和之比大于1，其中转换元件 邻接辐射发射半导体芯片，其中发射辐射的半导体芯片被配置为产生主要辐射，其中转换元件被配置为将初级辐射转换成次级辐射，并且其中初级辐射和次级辐射离开辐射发射半导体芯片， 发射部件仅通过第一反射元件。