Method of selecting semiconductor chips

    公开(公告)号:US11257705B2

    公开(公告)日:2022-02-22

    申请号:US16468324

    申请日:2018-01-24

    Abstract: A method of selecting semiconductor chips includes: A) providing the semiconductor chips in a composite, B) producing a cohesive, mechanical first connection between the semiconductor chips and a carrier film, C) singulating the semiconductor chips, wherein the carrier film mechanically connects the semiconductor chips to one another after singulation, D) selectively weakening the first connection between some singulated semiconductor chips and the carrier film, depending on electro-optical and/or electrical properties of the semiconductor chips, and E) removing the semiconductor chips whose first connection is selectively weakened from the carrier film.

    METHOD OF SELECTING SEMICONDUCTOR CHIPS
    3.
    发明申请

    公开(公告)号:US20200090975A1

    公开(公告)日:2020-03-19

    申请号:US16468324

    申请日:2018-01-24

    Abstract: A method of selecting semiconductor chips includes: A) providing the semiconductor chips in a composite, B) producing a cohesive, mechanical first connection between the semiconductor chips and a carrier film, C) singulating the semiconductor chips, wherein the carrier film mechanically connects the semiconductor chips to one another after singulation, D) selectively weakening the first connection between some singulated semiconductor chips and the carrier film, depending on electro-optical and or electrical properties of the semiconductor chips, and E) removing the semiconductor chips whose first connection is selectively weakened from the carrier film.

    Radiation-emitting component
    5.
    发明授权
    Radiation-emitting component 有权
    辐射发射组件

    公开(公告)号:US09500938B2

    公开(公告)日:2016-11-22

    申请号:US14436071

    申请日:2013-10-11

    Abstract: A radiation-emitting component is disclosed. In embodiments a component includes a radiation-emitting semiconductor chip having a radiation exit area including a side face and a main face, a conversion element having a radiation exit area including a side face and a main face, and a first reflection element disposed downstream of the conversion element and the radiation-emitting semiconductor chip, wherein a ratio of a sum of the radiation exit areas of the radiation-emitting semiconductor chip to a sum of the radiation exit areas of the conversion element is greater than 1, wherein the conversion element adjoins the radiation-emitting semiconductor chip, wherein the radiation-emitting semiconductor chip is configured to generate primary radiation, wherein the conversion element is configured to convert the primary radiation into secondary radiation, and wherein the primary radiation and the secondary radiation leave the radiation-emitting component exclusively through the first reflection element.

    Abstract translation: 公开了辐射发射部件。 在实施例中,部件包括具有包括侧面和主面的辐射出射区域的辐射发射半导体芯片,具有包括侧面和主面的辐射出射区域的转换元件,以及设置在 转换元件和辐射发射半导体芯片,其中辐射发射半导体芯片的辐射出射面积之和与转换元件的辐射出射面积之和的比率大于1,其中转换元件 邻近辐射发射半导体芯片,其中发射辐射的半导体芯片被配置为产生主要辐射,其中转换元件被配置为将初级辐射转换成次级辐射,并且其中初级辐射和次级辐射离开辐射发射半导体芯片, 发射部件仅通过第一反射元件。

    Radiation-emitting Component
    10.
    发明申请
    Radiation-emitting Component 有权
    辐射发射组件

    公开(公告)号:US20150268543A1

    公开(公告)日:2015-09-24

    申请号:US14436071

    申请日:2013-10-11

    Abstract: A radiation-emitting component is disclosed. In embodiments a component includes a radiation-emitting semiconductor chip having a radiation exit area including a side face and a main face, a conversion element having a radiation exit area including a side face and a main face, and a first reflection element disposed downstream of the conversion element and the radiation-emitting semiconductor chip, wherein a ratio of a sum of the radiation exit areas of the radiation-emitting semiconductor chip to a sum of the radiation exit areas of the conversion element is greater than 1, wherein the conversion element adjoins the radiation-emitting semiconductor chip, wherein the radiation-emitting semiconductor chip is configured to generate primary radiation, wherein the conversion element is configured to convert the primary radiation into secondary radiation, and wherein the primary radiation and the secondary radiation leave the radiation-emitting component exclusively through the first reflection element.

    Abstract translation: 公开了辐射发射部件。 在实施例中,部件包括具有包括侧面和主面的辐射出射区域的辐射发射半导体芯片,具有包括侧面和主面的辐射出射区域的转换元件,以及设置在 转换元件和辐射发射半导体芯片,其中辐射发射半导体芯片的辐射出射面积之和与转换元件的辐射出射面积的总和之比大于1,其中转换元件 邻接辐射发射半导体芯片,其中发射辐射的半导体芯片被配置为产生主要辐射,其中转换元件被配置为将初级辐射转换成次级辐射,并且其中初级辐射和次级辐射离开辐射发射半导体芯片, 发射部件仅通过第一反射元件。

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